Piezoluminescence structure, piezoelectric structure, manufacturing method thereof, and high sensitivity pressure sensor using the same

Patent metadata

Field	Value
Publication number	US-12336435-B2
Application number	US-202117337301-A
Country	US
Kind code	B2
Filing date	Jun 2, 2021
Priority date	Jun 2, 2020
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an A n B n O 3n perovskite structure; and interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO 2 . Here, A and A* are different elements and are one of an alkaline earth metal element, an alkali metal element, a lanthanide element, and a post-transition metal element, B is a transition metal element, O is an oxygen element, and n is a positive (+) integer. The piezoelectric structure may be a piezoluminescence structure.

First claim

The invention claimed is:

1. A piezoelectric structure comprising:
a plurality of perovskite material layers each including a material having an A n B n O 3n perovskite structure; and
interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO 2 ,
wherein A is Na or K,
wherein A* is one of an alkaline earth metal element, an alkali metal element, a lanthanide element, or a post-transition metal element,
wherein B is Ir or Nb,
wherein O is an oxygen element, and
wherein n is a positive (+) integer.

2. The piezoelectric structure of claim 1 , wherein the reaction resistance of A*O to CO 2 is higher than reaction resistance of BaO to CO 2 .

3. The piezoelectric structure of claim 1 , wherein A*O having the reaction resistance to CO 2 includes one of SrO and CaO.

4. The piezoelectric structure of claim 1 , wherein the material having the A n B n O 3n perovskite structure has a lattice parameter within a range of ±20% of a lattice parameter of A*O.

5. The piezoelectric structure of claim 1 , wherein the material having the A n B n O 3n perovskite structure includes any one of NaNbO 3 and KNbO 3 .

6. The piezoelectric structure of claim 1 , wherein the perovskite material layers and the interlayers are alternately stacked two times or more.

7. The piezoelectric structure of claim 1 , wherein the interlayer is a monolayer of A*O or has a structure in which the monolayer is stacked in m layers, wherein m is a number equal to or greater than two and less than ten.

8. The piezoelectric structure of claim 1 , wherein the piezoelectric structure includes a compound represented by the following Chemical Formula by a combination of the material having the A n B n O 3n perovskite structure and A*O, and the compound has reaction resistance to CO 2 ,
(AA*) n+1 B n O 3n+1   Chemical Formula:

wherein A is Na or K,
wherein A* is one of an alkaline earth metal element, an alkali metal element, a lanthanide element, or a post-transition metal element,
wherein B is Ir or Nb,
wherein O is an oxygen element, and
wherein n is a positive (+) integer.

9. The piezoelectric structure of claim 1 , further comprising a dopant included in at least one of the perovskite material layer and the interlayer,
wherein the dopant includes a rare earth element or a transition metal element.

10. The piezoelectric structure of claim 9 , wherein the rare earth element of the dopant includes at least one of Sm, Eu, Gd, Yb, Pr, Tm, and Er, and the transition metal element of the dopant includes at least one of Mn, Cu, Nb, and Co.

11. The piezoelectric structure of claim 1 , wherein the piezoelectric structure is a piezoluminescence structure.

12. The piezoelectric structure of claim 1 , wherein a driving pressure and a luminescence intensity of the piezoelectric structure are adjusted by a number and/or a content of interlayers.

13. The piezoelectric structure of claim 1 , wherein a luminescence color and a luminescence intensity of the piezoelectric structure are adjusted by a trap site formed in the piezoelectric structure.

14. A piezoluminescence sensor comprising the piezoelectric structure of claim 1 .

15. A display device comprising the piezoelectric structure of claim 1 .

Assignees

• Univ Yonsei Iacf

Inventors

• Park Hyung Ho
• Kang Kyung Mun
• Wang Yue
• Kim Min Jae
• Singh Chabungbam Akendra
• Lee Chan

Classifications

• H10N30/302

  Sensors · CPC title

• H10N30/079

  using intermediate layers, e.g. for growth control · CPC title

• H10N30/076

  by vapour phase deposition · CPC title

• H10N30/05

  Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes · CPC title

• C09K11/55 Primary

  containing beryllium, magnesium, alkali metals or alkaline earth metals · CPC title