Light-emitting diode and method for producing same

Patent metadata

Field	Value
Publication number	US-12336370-B2
Application number	US-202017618392-A
Country	US
Kind code	B2
Filing date	Jun 10, 2020
Priority date	Jun 11, 2019
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film, wherein the metal oxide thin film has a composition including at least one selected from the group consisting of In 2 O 3 , ZnO, SiO 2 and SnO 2 .

First claim

The invention claimed is:

1. A light emitting diode comprising:
a first electrode and a second electrode that are opposite to each other;
a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and
an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film,
wherein the metal oxide thin film has a composition selected from a group of chemical formulas consisting of:
(1-y) [ (1-x) (In 2 O 3 )— x ZnO]— y SiO 2   [Chemical Formula 1]

wherein, in chemical formula 1, 0<x<1 and 0.03≤y<0.29, and
(1-y) [ (1-x) (In 2 O 3 )— x SnO 2 ]— y SiO 2   [Chemical Formula 2]

wherein, in chemical formula 2, 0<x<1 and 0.14≤y<0.54.

2. The light emitting diode according to claim 1 , wherein:
the metal oxide thin film is formed through a sputtering method.

3. A method for manufacturing a light emitting diode, comprising:
a step of forming a first electrode on a substrate; and
a step of forming an electron transport layer on the first electrode,
wherein the step of forming the electron transport layer is carried out by a sputtering method,
wherein the electron transport layer has a composition selected from a group of chemical formulas consisting of:
(1-y) [ (1-x) (In 2 O 3 )— x ZnO]— y SiO 2   [Chemical Formula 1]

wherein, in chemical formula 1, 0<x<1 and 0.03≤y<0.29, and
(1-y) [ (1-x) (In 2 O 3 )— x SnO 2 ]— y SiO 2   [Chemical Formula 2]

wherein, in chemical formula 2, 0<x<1 and 0.14≤y<0.54.

4. The method for manufacturing a light emitting diode according to claim 3 , wherein:
the step of forming a first electrode and the step of forming an electron transport layer are carried out by a continuous vapor deposition process through the sputtering method.

5. The method for manufacturing a light emitting diode according to claim 3 , wherein:
the step of forming an electron transport layer is carried out by a sputtering method using In—Zn—O target and SiO 2 target.

6. The method for manufacturing a light emitting diode according to claim 3 , wherein:
the step of forming an electron transport layer is carried out by a sputtering method using In—Sn—O target and SiO 2 target.

7. The method for manufacturing a light emitting diode according to claim 3 , wherein:
the method is carried out by a single target sputtering method using any one target selected from the group consisting of an In—Zn—Si—O target, and an In—Sn—Si—O target.

8. The method for manufacturing a light emitting diode according to claim 3 , wherein:
the composition ratio of SiO 2 is adjusted through the sputtering method in the step of forming the electron transport layer.

Assignees

• Kyungpook Nat Univ Ind Academic Coop Found
• Seoul Nat Univ R&Db Foundation

Inventors

• Heo Young Woo
• Kim Hyeok
• Lee Joon Hyung
• Kim Jeong Joo
• Lee Sang Wook
• Han Jeong Woo
• Kim Sang Hyub
• Lee Chang Hee

Classifications

• H10K2102/00

  Constructional details relating to the organic devices covered by this subclass · CPC title

• H10K2102/103

  comprising indium oxides, e.g. ITO · CPC title

• H10K2102/102

  comprising tin oxides, e.g. fluorine-doped SnO2 · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K59/38

  comprising colour filters or colour changing media [CCM] · CPC title