Ultra-thin LED element and inkjet ink and light source including the same

Patent metadata

Field	Value
Publication number	US-12336330-B2
Application number	US-202117563333-A
Country	US
Kind code	B2
Filing date	Dec 28, 2021
Priority date	Dec 31, 2020
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

The present invention relates to a light-emitting diode (LED) element, and more particularly, to an ultra-thin LED element, and inkjet ink and a light source including the same.

First claim

What is claimed is:

1. An ultra-thin light-emitting diode (LED) element at least comprising:
a first conductive semiconductor layer;
a photoactive layer;
a second conductive semiconductor layer; and
a selective bonding layer configured to erect and assemble the ultra-thin LED element in a thickness direction thereof at a desired position of a driving electrode on an uppermost layer or a lowermost layer of the ultra-thin LED element, wherein the selective bonding layer is a magnetic layer or a chemical bond inducing layer,
wherein a ratio between a thickness in a stack direction of layers and a length of a major axis in a cross section perpendicular to the stack direction is in a range of 1:0.5 to 1:1.5.

2. The ultra-thin LED element of claim 1 , wherein:
one of the first conductive semiconductor layer and the second conductive semiconductor layer is an n-type III-nitride semiconductor layer; and
the other one thereof is a p-type III-nitride semiconductor layer.

3. The ultra-thin LED element of claim 1 , wherein the ultra-thin LED element has a maximum surface area of 16 μm 2 or less, wherein the maximum surface area refers to a maximum value among areas of a vertical projection surface for the ultra-thin LED element.

4. The ultra-thin LED element of claim 1 , wherein the ultra-thin LED element has a thickness of 2.7 μm or less.

5. The ultra-thin LED element of claim 1 , wherein:
the first conductive semiconductor layer is an n-type III-nitride semiconductor layer; and
the ultra-thin LED element further includes an electron delay layer below the first conductive semiconductor layer such that the numbers of electrons and holes recombined in the photoactive layer are balanced.

6. The ultra-thin LED element of claim 5 , wherein the electron delay layer includes at least one selected from the group consisting of CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, GaTe, SiC, ZnO, ZnMgO, SnO 2 , TiO 2 , In 2 O 3 , Ga 2 O 3 , silicon (Si), polyparaphenylene vinylene, derivatives thereof, polyaniline, poly(3-alkylthiophene), and poly(paraphenylene).

7. The LED element of claim 5 , wherein:
the first conductive semiconductor layer is a doped n-type III-nitride semiconductor layer; and
the electron delay layer is a III-nitride semiconductor having a lower doping concentration than the first conductive semiconductor layer.

8. The ultra-thin LED element of claim 1 , further comprising a protective film configured to surround an exposed side surface of the ultra-thin LED element.

9. The ultra-thin LED element of claim 1 , wherein:
the first conductive semiconductor layer is an n-type III-nitride semiconductor layer;
the second conductive semiconductor layer is a p-type III-nitride semiconductor layer; and
the ultra-thin LED element further includes at least any one film of a hole pushing film configured to surround an exposed side surface of the second conductive semiconductor layer or the exposed side surface of the second conductive semiconductor layer and an exposed side surface of at least a portion of the photoactive layer and move holes at a surface side of the exposed side surface toward a center, and an electron pushing film configured to surround an exposed side surface of the first conductive semiconductor layer and move electrons at a surface side of the exposed side surface toward a center.

10. The ultra-thin LED element of claim 9 , comprising both the hole pushing film and the electron pushing film,
wherein the electron pushing film is provided as an outermost film configured to surround side surfaces of the first conductive semiconductor layer, the photoactive layer, and the second conductive semiconductor layer.

11. The ultra-thin LED element of claim 9 , wherein the hole pushing film includes at least one selected from the group consisting of AlN x , ZrO 2 , MoO, Sc 2 O 3 , La 2 O 3 , MgO, Y 2 O 3 , Al 2 O 3 , Ga 2 O 3 , TiO 2 , ZnS, Ta 2 O 5 , and n-MoS 2 .

12. The ultra-thin LED element of claim 9 , wherein the electron pushing film includes at least one selected from the group consisting of Al 2 O 3 , HfO 2 , SiN x , SiO 2 , ZrO 2 , Sc 2 O 3 , AlN x , and Ga 2 O 3 .

13. The ultra-thin LED element of claim 1 , further comprising a second electrode layer provided on the first conductive semiconductor layer and a first electrode layer provided on the second conductive semiconductor layer.

14. An ink composition for inkjet, comprising a plurality of ultra-thin LED elements identical to the ultra-thin LED element of claim 1 .

15. A light source that is equipped with the ultra-thin LED element of claim 1 .

Assignees

• Univ Kookmin Ind Acad Coop Found

Inventors

• Do Young Rag

Classifications

• H10H20/831

  characterised by their shape · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title