Method for measuring resistivity of silicon single crystal
US-2022146444-A1 · May 12, 2022 · US
Measuring method of resistivity of a wafer
US12334403B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12334403-B2 |
| Application number | US-202117545742-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 8, 2021 |
| Priority date | Aug 9, 2021 |
| Publication date | Jun 17, 2025 |
| Grant date | Jun 17, 2025 |
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Abstract
Official abstract text for this publication.
The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surface, so as to restrict surface variation when placing the wafer in a later process. Therefore, the resistivity measurement of the wafer surface only slightly varies.
First claim
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What is claimed is: 1. A measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured; conducting a thermal treatment for the wafer to remove a thermal doner in the wafer; conducting an oxidation process for the wafer to form an oxidized surface on the wafer; measuring resistivity of the wafer; and cooling the wafer until a room temperature after conducting the oxidation process, wherein the resistivity of the wafer exceeds 500 ohm-cm. 2. The measuring method according to claim 1 , wherein the thermal treatment is a rapid thermal treatment at a temperature range of 750° C.-1250° C. 3. The measuring method according to claim 2 , wherein the thermal treatment lasts for 30 sec to 50 sec. 4. The measuring method according to claim 1 , wherein the oxidation process comprises heating-up the wafer for a short period to form the oxidized surface on the wafer. 5. The measuring method according to claim 4 , wherein the oxidation process is conducted at 50° C. to 300° C. 6. The measuring method according to claim 4 , wherein the oxidation process lasts for 5 min to 3 hr. 7. The measuring method according to claim 1 , wherein the resistivity of the wafer is measured with a four-point probe (4PP) method. 8. The measuring method according to claim 1 , wherein the wafer is a monocrystalline wafer.
Assignees
Inventors
Classifications
- H10P74/207Primary
Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title
- G01R27/02Primary
Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant (by measuring phase angle only G01R25/00) · CPC title
Silicon · CPC title
- H01L22/14Primary
Electricity · mapped topic
Thermal treatments, e.g. annealing or sintering · CPC title
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- What does patent US12334403B2 cover?
- The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surf…
- Who is the assignee on this patent?
- Zing Semiconductor Corp, Shanghai Inst Microsystem & Information Tech Cas
- What technology area does this patent fall under?
- Primary CPC classification H10P74/207. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 17 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).