Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-12334366-B2
Application number	US-202117550076-A
Country	US
Kind code	B2
Filing date	Dec 14, 2021
Priority date	Dec 28, 2020
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a spin chuck that holds a substrate; and
a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck, wherein
the fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate, and
the gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage, and
the rectifying structure has a plurality of first shielding portions provided at intervals along a circumferential direction of the gas flow passage, the first shielding portions shield movement of the gas to a downstream side of the gas flow passage, and
a downstream end of the first shielding portion is positioned on an upstream side of the gas discharge port.

2. The substrate processing apparatus according to claim 1 , wherein
the fluid nozzle includes a plurality of the gas discharge ports, and a plurality of the gas flow passages through which the gas is supplied respectively to the plurality of gas discharge ports, and
the plurality of gas discharge ports has a first gas discharge port, and a second gas discharge port provided at a position further away from the principal surface of the substrate in the intersecting direction than the first gas discharge port.

3. The substrate processing apparatus according to claim 2 , wherein
a width of the second gas discharge port in the intersecting direction is narrower than a width of the first gas discharge port in the intersecting direction.

4. The substrate processing apparatus according to claim 2 , wherein
a width of the second gas discharge port in the intersecting direction is wider than a width of the first gas discharge port in the intersecting direction.

5. The substrate processing apparatus according to claim 1 , wherein
the rectifying structure further has a plurality of second shielding portions provided on the downstream side of the plurality of first shielding portions in the gas flow passage, the second shielding portions shield movement of the gas to the downstream side of the gas flow passage, and
the positions of the plurality of second shielding portions in the circumferential direction are deviated from the positions of the plurality of first shielding portions in the circumferential direction.

6. The substrate processing apparatus according to claim 1 , wherein
the gas flow passage further has a linear flow passage linearly extending in the intersecting direction, and a bending flow passage that bends an intermediate portion of the linear flow passage.

7. The substrate processing apparatus according to claim 6 , wherein
the rectifying structure is provided in the bending flow passage.

8. The substrate processing apparatus according to claim 1 , wherein
the fluid nozzle further includes a nozzle main body having a facing surface which faces the principal surface of the substrate and a side surface coupled to the facing surface, the side surface on which the gas discharge port is opened, the nozzle main body inside of which the gas flow passage is formed.

9. The substrate processing apparatus according to claim 8 , wherein
the fluid nozzle further includes a center gas discharge port from which the gas is discharged toward a center of the principal surface of the substrate,
a truncated-cone-shaped recessed portion recessed in the direction away from the principal surface of the substrate is formed on the facing surface of the fluid nozzle, and
the center gas discharge port is placed in the recessed portion.

10. The substrate processing apparatus according to claim 9 , wherein
the fluid nozzle further includes a processing liquid discharge port placed in the recessed portion, the processing liquid discharge port from which a processing liquid is discharged toward the principal surface of the substrate.

11. The substrate processing apparatus according to claim 8 , wherein
the nozzle main body includes a plurality of flow passage partition members each of which has a surface partitioning the gas flow passage.

12. The substrate processing apparatus according to claim 1 , further comprising:
a gas pipe connected to the fluid nozzle, the gas pipe through which the gas is supplied to the gas flow passage from a direction parallel to the principal surface of the substrate.

13. A substrate processing apparatus comprising: a spin chuck that holds a substrate; and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck, wherein the fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate, and the gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, a downstream end and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage, a downstream end of the first shielding portion is positioned on an upstream side of the gas discharge port, and the rectifying structure has a plurality of first shielding portions that is provided at intervals along a circumferential direction of the gas flow passage and that shield movement of the gas to a downstream side of the gas flow passage, and a plurality of second shielding portions that is provided on the downstream side of the plurality of first shielding portions in the gas flow passage and that shield movement of the gas to the downstream side of the gas flow passage, and the positions of the plurality of second shielding portions in the circumferential direction are deviated from the positions of the plurality of first shielding portions in the circumferential direction.

14. A substrate processing apparatus comprising:
a spin chuck that holds a substrate; and
a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck, wherein
the fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate, and
the gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage, and
the gas flow passage further has a linear flow passage linearly extending in the int

Assignees

• Screen Holdings Co Ltd

Inventors

• Negoro Sei
• ORISAKA Masayuki

Classifications

• H10P72/0404 Primary

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0424 Primary

  using mainly spraying means, e.g. nozzles · CPC title