Data integrity checks based on voltage distribution metrics

Patent metadata

Field	Value
Publication number	US-12334166-B2
Application number	US-202318373741-A
Country	US
Kind code	B2
Filing date	Sep 27, 2023
Priority date	Dec 16, 2020
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including determining a value of a data state metric of a memory page, wherein the data state metric value is reflective of a number of bit errors associated with the memory page; upon determining that the data state metric value satisfies a first threshold criterion, obtaining, from a neural network, a value of a voltage distribution metric associated with the page; and upon determining that the voltage distribution metric value satisfies a second threshold criterion, performing a media management operation with respect to a block associated with the page, wherein the media management operation comprises writing data stored at the block to a new block.

First claim

What is claimed is:

1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, to perform operations comprising:
determining a value of a data state metric of a memory page, wherein the data state metric value is reflective of a number of bit errors associated with the memory page;
upon determining that the data state metric value satisfies a threshold criterion, providing, to a neural network, at least two different voltage distribution metrics values currently associated with the memory page, wherein each voltage distribution metrics value reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center; and
obtaining, from the neural network, a recommendation to trigger a media management operation with respect to a block associated with the memory page.

2. The system of claim 1 , wherein the data state metric value comprises a raw bit error rate (RBER) or a bit error count (BER).

3. The system of claim 1 , wherein one or more of the voltage distribution metric values are determined using a vectorized read level calibration (vRLC) procedure.

4. The system of claim 1 , wherein the operations further comprise:
obtaining, from the neural network, a recommendation to select a new memory page.

5. The system of claim 1 , wherein the operations further comprise:
responsive to the data state metric value failing to satisfy the threshold criterion, determining a new value of the data state metric of another memory page associated with the block.

6. The system of claim 1 , wherein the media management operation comprises writing data stored at the block to a new block.

7. A method, comprising:
determining a value of a data state metric of a memory page, wherein the data state metric value is reflective of a number of bit errors associated with the memory page;
upon determining that the data state metric value satisfies a threshold criterion, providing, to a neural network, at least two different voltage distribution metrics values currently associated with the memory page, wherein each voltage distribution metrics value reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center; and
obtaining, from the neural network, a recommendation to trigger a media management operation with respect to a block associated with the memory page.

8. The method of claim 7 , wherein the data state metric value comprises a raw bit error rate (RBER) or a bit error count (BER).

9. The method of claim 7 , wherein one or more of the voltage distribution metric values are determined using a vectorized read level calibration (vRLC) procedure.

10. The method of claim 7 , wherein:
obtaining, from the neural network, a recommendation to select a new memory page.

11. The method of claim 7 , further comprising:
responsive to the data state metric value failing to satisfy the threshold criterion, determining a new value of the data state metric of another memory page associated with the block.

12. The method of claim 7 , wherein the media management operation comprises writing data stored at the block to a new block.

13. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory, performs operations comprising:
determining a value of a data state metric of a memory page, wherein the data state metric value is reflective of a number of bit errors associated with the memory page;
upon determining that the data state metric value satisfies a threshold criterion, providing, to a neural network, at least two different voltage distribution metrics values currently associated with the memory page, wherein each voltage distribution metrics value reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center; and
obtaining, from the neural network, a recommendation to trigger a media management operation with respect to a block associated with the memory page.

14. The non-transitory computer-readable storage medium of claim 13 , wherein the data state metric value comprises a raw bit error rate (RBER) or a bit error count (BER).

15. The non-transitory computer-readable storage medium of claim 13 , wherein one or more of the voltage distribution metric values are determined using a vectorized read level calibration (vRLC) procedure.

16. The non-transitory computer-readable storage medium of claim 13 , wherein the operations further comprise:
obtaining, from the neural network, a recommendation to select a new memory page.

17. The non-transitory computer-readable storage medium of claim 13 , wherein the operations further comprise:
responsive to the data state metric value failing to satisfy the threshold criterion, determining a new value of the data state metric of another memory page associated with the block.

Assignees

• Micron Technology Inc

Inventors

• Rayaprolu Vamsi Pavan
• Sheperek Michael
• Smitchger Christopher M

Classifications

• G11C29/44

  Indication or identification of errors, e.g. for repair · CPC title

• G11C29/50004

  of threshold voltage · CPC title

• G11C2207/2254

  Calibration · CPC title

• G11C29/12005

  comprising voltage or current generators · CPC title

• G11C11/5642

  Sensing or reading circuits; Data output circuits · CPC title