Manufacturing device for SiC semiconductor substrate

Patent metadata

Field	Value
Publication number	US-12325930-B2
Application number	US-202217734578-A
Country	US
Kind code	B2
Filing date	May 2, 2022
Priority date	Apr 28, 2016
Publication date	Jun 10, 2025
Grant date	Jun 10, 2025

Abstract

A manufacturing device of SiC semiconductor substrates includes a SiC container ( 3 ) in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace ( 11 ) capable of heating the SiC container in Si atmosphere. The device can further be configured such that the SiC container is housed in Si atmosphere and an underlying substrate ( 40 ) is housed in the SiC container, and the high-temperature vacuum furnace is capable of heating with a temperature gradient.

First claim

The invention claimed is:

1. A manufacturing device of SiC semiconductor substrates, the device comprising:
a SiC container in which Si vapor and C vapor are generated in an internal space during a heat treatment;
a main heating chamber capable of heating the SiC container in Si atmosphere; and
a source of Si other than the SiC container that generates Si vapor around the outside of the SiC container during the heat treatment, wherein
the source of Si is located outside of the SiC container,
an atmosphere outside the SiC container has an equilibrium vapor pressure of Si,
an atmosphere inside the SiC container has a higher partial pressure of a gas containing C atoms than that in the atmosphere outside the SiC container, and
the SiC container is a semi-closed system that comprises an upper container and a lower container and that is configured such that the Si vapor generated from the source of Si enters the inside of the SiC container through a gap between the upper container and the lower container.

2. The manufacturing device of SiC semiconductor substrates according to claim 1 , wherein
the SiC container is housed in Si atmosphere and an underlying substrate is housed in the SiC container.

3. The manufacturing device of SiC semiconductor substrates according to claim 1 , wherein
the main heating chamber is capable of heating with a temperature gradient.

4. The manufacturing device of SiC semiconductor substrates according to claim 1 , the device further comprising:
a TaC container in which Si vapor is generated in the internal space during the heat treatment.

5. The manufacturing device of SiC semiconductor substrates according to claim 4 , wherein
the SiC container is housed in the TaC container.

6. A manufacturing device of SiC semiconductor substrates, the device comprising:
a SiC container in which Si vapor and C vapor are generated in an internal space during a heat treatment; and
a TaC container comprising a source of Si that generates Si vapor around the outside of the SiC container during the heat treatment, wherein
the SiC container is housed in the TaC container,
an atmosphere inside the TaC container and outside the SiC container has an equilibrium vapor pressure of Si,
an atmosphere inside of the SiC container has a higher partial pressure of a gas containing C atoms than that in the atmosphere inside the TaC container and outside the SiC container,
the SiC container is a semi-closed system that comprises an SiC upper container and an SiC lower container and that is configured such that the Si vapor generated from the source of Si enters the inside of the SiC container through a gap between the SiC upper container and the SiC lower container, and
the TaC container comprises a TaC upper container and a TaC lower container, and there is a gap when the TaC upper container and the TaC lower container are fitted together.

7. The manufacturing device of SiC semiconductor substrates according to claim 6 , wherein
an underlying substrate is housed in the SiC container.

8. The manufacturing device of SiC semiconductor substrates according to claim 4 , wherein
the TaC container includes a TaC layer and the source of Si.

9. The manufacturing device of SiC semiconductor substrates according to claim 1 , wherein
the SiC container is configured to include polycrystalline SiC.

10. The manufacturing device of SiC semiconductor substrates according to claim 1 , wherein
the underlying substrate comprises a plurality of underlying substrates, and
the plurality of underlying substrates are placed in the SiC container.

11. The manufacturing device of SiC semiconductor substrates according to claim 6 ,
wherein the source of Si is at least one of: (i) Si or a Si compound contained in an inner wall of the TaC container; and (ii) Si or a Si compound provided over at least a portion of an inner surface of the TaC container.

Assignees

• Kwansei Gakuin Educational Found
• Toyota Tsusho Corp

Inventors

• Kaneko Tadaaki
• Kutsuma Yasunori
• Ashida Koji
• Hashimoto Ryo

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title