Platinum-based sputtering target, and method for producing the same

Patent metadata

Field	Value
Publication number	US-12325908-B2
Application number	US-202118036827-A
Country	US
Kind code	B2
Filing date	Nov 15, 2021
Priority date	Nov 16, 2020
Publication date	Jun 10, 2025
Grant date	Jun 10, 2025

Abstract

The present invention relates to a platinum-based sputtering target containing platinum or a platinum alloy. The platinum-based sputtering target of the present invention is characterized by a material structure in a thickness-direction cross section thereof. Specifically, when a thickness-direction cross section is equally divided into n sections (n=5 to 20) along a thickness direction, a region including (n−2) sections excluding both end sections is set as a determination region, and when an average grain size in each of the sections is measured in the determination region, as well as an average grain size in the entire determination region is measured, the average grain size in the entire determination region is 150 μm or less, and a coefficient of variation calculated based on the average grain size in each of the sections of the determination region is 15% or less.

First claim

What is claimed is:

1. A platinum-based sputtering target comprising platinum or a platinum alloy,
wherein when a thickness-direction cross section is equally divided into n sections (n=5 to 20) along a thickness direction, a region including (n−2) sections excluding both end sections is set as a determination region, and an average grain size in each of the sections is measured in the determination region, as well as an average grain size in the entire determination region is measured,
the average grain size in the entire determination region is 150 μm or less, and
a coefficient of variation calculated based on the average grain size in each of the sections of the determination region is 15% or less, and,
in the determination region, a number-based proportion of crystal grains having an aspect ratio of 3 or more is 20% or less, and a number-based proportion of crystal grains having an aspect ratio of 5 or more is 9% or less.

2. The platinum-based sputtering target according to claim 1 , wherein the average grain size in the entire determination region is 40 μm or less.

3. The platinum-based sputtering target according to claim 1 , wherein the platinum-based sputtering target comprises platinum with a purity of 99.99% by mass or more.

4. The platinum-based sputtering target according to claim 1 , wherein the platinum-based sputtering target comprises an alloy containing, as an additional element, any one of palladium, rhodium, iridium, ruthenium, cobalt, manganese, nickel, and tungsten in an amount of 1 at % or more and 30 at % or less, and
wherein the alloy has a total purity of platinum and the additional element of 99.9% by mass or more.

5. A method for producing the platinum-based sputtering target according to claim 1 , comprising:
a forging step of forging at least once a casting comprising platinum or platinum alloy resulting from melting and casting to produce an ingot; a rolling step of rolling at least once the ingot to produce a rolled material to; and a recrystallization heat treatment step of heat treating the rolled material,
wherein a homogenization heat treatment for heating the ingot at a temperature of 850° C. or more and 950° C. or less is performed after the forging step and before the rolling step, and
wherein a heating temperature for the rolled material in the recrystallization heat treatment step is 600° C. or more and 700° C. or less.

6. The method for producing the platinum-based sputtering target according to claim 5 , wherein a heating time for the ingot in the homogenization heat treatment step is 60 minutes or more and 120 minutes or less.

7. The platinum-based sputtering target according to claim 2 , wherein in the determination region, a number-based proportion of crystal grains having an aspect ratio of 3 or more is 20% or less, and a number-based proportion of crystal grains having an aspect ratio of 5 or more is 9% or less.

8. The platinum-based sputtering target according to claim 2 , wherein the platinum-based sputtering target comprises platinum with a purity of 99.99% by mass or more.

9. The platinum-based sputtering target according to claim 2 , wherein the platinum-based sputtering target comprises an alloy containing, as an additional element, any one of palladium, rhodium, iridium, ruthenium, cobalt, manganese, nickel, and tungsten in an amount of 1 at % or more and 30 at % or less, and
wherein the alloy has a total purity of platinum and the additional element of 99.9% by mass or more.

Assignees

• Univ Tohoku
• Tanaka Precious Metal Ind
• Tanaka Kikizoku Kogyo K K

Inventors

• FUJINO Akihito
• Tanaka Kunihiro
• Kubota Shuichi
• Asada Takao
• Endoh Tetsuo
• Ikeda Shoji

Classifications

• C23C14/14

  Metallic material, boron or silicon · CPC title

• C22F1/14

  of noble metals or alloys based thereon · CPC title

• B21B1/02

  for rolling heavy work, e.g. ingots, slabs, {blooms, or} billets, in which the cross-sectional form is unimportant {; Rolling combined with forging or pressing} · CPC title

• C22C5/04

  Alloys based on a platinum group metal · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title