Manufacturing method of dielectric waveguide radio-frequency device

Patent metadata

Field	Value
Publication number	US-12322849-B2
Application number	US-202418670324-A
Country	US
Kind code	B2
Filing date	May 21, 2024
Priority date	Nov 24, 2021
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

Provided is a manufacturing method of a dielectric waveguide radio-frequency device, which relates to a manufacturing method of waveguide radio-frequency devices. The object of the present disclosure is to solve the issues of high costs, low processing efficiency, poor dimensional accuracy, poor surface quality, low device performance and inability to manufacture the ceramic waveguide radio-frequency devices in huge batches in the existing manufacturing method of the ceramic waveguide radio-frequency devices. The method includes: I. sectioning, II. slotting, III. processing tuning hole, IV. processing energy input hole, V. adhesive coating, stacking, VI. bonding, and VII. entire metallization, so as to obtain the dielectric waveguide radio-frequency device. In the present disclosure, more complex and diverse device topology structures can be manufactured, reducing the device manufacturing difficulty, and improving the accuracy allowance.

First claim

What is claimed is:

1. A manufacturing method of a dielectric waveguide radio-frequency device, comprising the following steps:
I. sectioning:
a dielectric waveguide radio-frequency device is designed, and a dielectric material is sectioned into n layers along a direction based on a model of the dielectric waveguide radio-frequency device, and then ground, polished, and cut to obtain n dielectric material sheets; the n dielectric material sheets are stacked from bottom up;
II. coupling:
based on design requirements of the dielectric waveguide radio-frequency device, a quantity of dielectric resonant cavities is determined, and coupling designing is performed between adjacent dielectric resonant cavities, and then a coupling structure is processed on the corresponding sheets of the n dielectric material sheets; and
the coupling structure in the step II is of slotting coupling, through hole coupling, blind hole coupling, inclined hole coupling or windowing coupling;
III. processing tuning hole:
based on the quantity and a depth of the resonant cavities disposed based on the model of dielectric waveguide radio-frequency device, a tuning hole is processed respectively on the n dielectric material sheets;
IV. processing energy input hole:
on the last dielectric material sheet, an energy input hole is processed respectively on back surfaces of two resonant cavities of the quantity of dielectric resonant cavities;
V. adhesive coating, stacking/local metallization, adhesive coating, and stacking:
when the coupling structure in the step II is of slotting coupling, through hole coupling, blind hole coupling, or inclined hole coupling, an adhesive is coated on an upper surface of each dielectric material sheet other than a first dielectric material sheet of the n dielectric material sheets disposed on a bottom and then the dielectric material sheets are sequentially stacked from the bottom up to obtain n adhesive-coated dielectric material sheets; and
when the coupling structure in the step II is of windowing coupling, local metallization is performed on a coupling structure part of the dielectric material sheets, and after the local metallization is completed, the adhesive is coated on the upper surface of each dielectric material sheet other than the first dielectric material sheet while avoiding a metallized part, and finally the dielectric material sheets are sequentially stacked from the bottom up to obtain the n adhesive-coated dielectric material sheets;
VI. bonding:
bonding is performed based on the following cases to obtain a device;
VII. entire metallization
{circle around (1)} the device is cleaned to remove surface impurities and then air-dried to obtain a dry device;
{circle around (2)} the dry device is put into an ion magnetron sputtering instrument, and then with gold as target material, sputtering is performed for 200 s under the current of 8 A to 10 A to obtain a gold-plated device;
{circle around (3)} the gold-plated device is connected with a cathode of an electroplating device and then soaked in an electroplating liquid; an anode of the electroplating device is connected with a pure copper plate, and then electroplating is performed for 40 min under the current of 2 A to 4 A to obtain a copper-plated device; and
{circle around (4)} the copper-plated device is connected with the cathode of the electroplating device, and a cotton soaked with a gold-plating chemical solution is connected with the anode of the electroplating device, and coating operation is performed on the surface of the copper-plated device by using the cotton under the voltage of 3V to 5V to complete the gold plating process and obtain the dielectric waveguide radio-frequency device.

2. The manufacturing method of claim 1 , wherein the n dielectric material sheets in the step I have a same thickness or different thicknesses.

3. The manufacturing method of claim 1 , wherein the n in the step I is 2≤n≤100.

4. The manufacturing method of claim 1 , wherein the thickness of each dielectric material sheet is in the step I 30 μm to 5 mm.

5. The manufacturing method of claim 1 , wherein the dielectric material in the step I is ceramic, glass, fused quartz or resin.

6. The manufacturing method of claim 1 , wherein the local metallization in the step V specifically comprises the following steps:
{circle around (1)} a non-metallized region is covered by a mask;
the mask in the step (1) is an adhesive tape or epoxy resin;
{circle around (2)} the n dielectric material sheets are cleaned to remove surface impurities and then air-dried to obtain n dry dielectric material sheets;
{circle around (3)} the n dry dielectric material sheets are put into an ion magnetron sputtering instrument, and then with gold as target material, sputtering is performed for 200 s under the current of 8 A to 10 A to obtain n gold-plated dielectric material sheets;
{circle around (4)} the n gold-plated dielectric material sheets are connected with a cathode of a electroplating device and then soaked in an electroplating liquid; and an anode of the electroplating device is connected with a pure copper plate, and electroplating is performed for 40 min under the current of 2 A to 4 A to obtain n copper-plated dielectric material sheets;
{circle around (5)} the n copper-plated dielectric material sheets are connected with the cathode of the electroplating device, and a cotton soaked with a gold-plating chemical solution is connected with the anode of the electroplating device, and coating operation is performed on the surface of the n copper-plated dielectric material sheets by using the cotton under the voltage of 3V to 5V to complete the gold plating process; and
{circle around (6)} the mask on the surface of the n dielectric material sheets is removed and then the n dielectric material sheets are cleaned to remove surface impurities and then air-dried to complete local metallization.

7. The manufacturing method of claim 1 , wherein the depths of the resonant cavities in the step III are equal or unequal.

8. The manufacturing method of claim 1 , wherein depths of the energy input holes in the step IV are equal or unequal.

9. The manufacturing method of claim 1 , wherein in the case 1 in the step VI: when the adhesive used in the step V is a pre-impregnated (pp) film, the n adhesive-coated dielectric material sheets are put into a mould and cured for 30 min to 120 min at the temperature of 120° C. under the pressure of 0.5 MPa to 20 MPa, and finally an overflowing adhesive layer is ground so as to complete the bonding process;
in case 2: when the adhesive in the step V is a thermal plastic resin film, the n adhesive-coated dielectric material sheets are put into a mould and held for 2 h at the temperature of 150° C. under the pressure of 0.5 to 20 MPa while redundant thermal plastic resin film is removed, so as to complete the bonding process; the thermal plastic resin film is a polyethylene film with a thickness of 0.03 mm to 0.3 mm;
in case 3: when the adhesive in the step V is a premixed adhesive, the n adhesive-coated dielectric material sheets are put into a mould and cured for 10 min to 120 min under the pressure of 0.5 MPa to 20 MPa so as to complete the bonding process; the premixed adhesive is obtained by mixing acrylic resin, curing agent and ceramic powder at a weight ratio of 1.4:1:(0.01 to 1); the ceramic powder is titanium dioxide ceramic powder, barium titanate ceramic powder or magnesium titanate ceramic powder;
in case 4: when the adhesive in the step V is a thermosetting epoxy resin adhesive, the n adhesive-coated dielectric material sheets are put into a mould and cured for 1 h to 30 h under the pressure of 0.5 MPa to 20 MPa so as to complete the bonding proc

Assignees

• Univ Tianjin

Inventors

• Lin Bin
• Hou Hetian
• Wang Haoji
• Sui tianyi

Classifications

• H01P11/007

  Manufacturing frequency-selective devices (resonators H01P11/008) · CPC title

• H01P11/003

  Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines · CPC title

• H01P11/002

  Manufacturing hollow waveguides · CPC title

• H01P11/008

  Manufacturing resonators · CPC title

• H01P11/006 Primary

  Manufacturing dielectric waveguides · CPC title