Ferroelectric thin film and forming method thereof

Patent metadata

Field	Value
Publication number	US-12320032-B2
Application number	US-202318193483-A
Country	US
Kind code	B2
Filing date	Mar 30, 2023
Priority date	Apr 6, 2022
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.

First claim

What is claimed is:

1. A method of forming a ferroelectric thin film comprising:
forming a sacrificial seed layer on a first substrate;
forming a ferroelectric thin film on the sacrificial seed layer; and
transferring the ferroelectric thin film to a second substrate,
wherein the first substrate comprises a STO (SrTiQ 3 ) substrate, the sacrificial seed layer comprises a LSMO (La 0.7 Sr 0.3 MnO 3 ) layer, and the ferroelectric thin film comprises a HfO 2 thin film.

2. The method of claim 1 , wherein the HfO 2 thin film is doped with yttrium (Y).

3. The method of claim 1 , wherein the ferroelectric thin film is formed by epitaxial growth from the sacrificial seed layer.

4. The method of claim 1 , wherein the transferring of the ferroelectric thin film comprises removing the sacrificial seed layer.

5. A method of forming a ferroelectric thin film comprising:
forming a sacrificial seed layer on a first substrate;
forming a ferroelectric thin film on the sacrificial seed layer; and
transferring the ferroelectric thin film to a second substrate,
wherein the crystal structure of the ferroelectric thin film is controlled by the thickness of the ferroelectric thin film.

6. The method of claim 5 , wherein the ferroelectric thin film comprises a HfO 2 thin film, and
wherein the HfO 2 thin film is composed of t-phase at a first thickness and composed of o-phase at a second thickness greater than the first thickness.

7. The method of claim 6 , wherein the ferroelectric thin film comprises a HfO 2 thin film, and
wherein the HfO 2 thin film has a compressively strained symmetric phase disposed between o-phase domains.

8. The method of claim 7 , further comprising forming a support layer on the ferroelectric thin film,
wherein the ferroelectric thin film is transferred using the support layer.

9. A ferroelectric thin film formed by the method of claim 1 .

10. A ferroelectric thin film formed by the method of claim 5 .

Assignees

• Seoul Nat Univ R&Db Foundation
• Inst Basic Science

Inventors

• Park Jungwon
• Park Kunwoo

Classifications

• C30B1/026

  Solid phase epitaxial growth through a disordered intermediate layer · CPC title

• C30B29/68

  Crystals with laminate structure, e.g. "superlattices" · CPC title

• C30B29/16 Primary

  Oxides · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• C30B23/025

  characterised by the substrate · CPC title