Method of using sic container

Patent metadata

Field	Value
Publication number	US-12320030-B2
Application number	US-202318380897-A
Country	US
Kind code	B2
Filing date	Oct 17, 2023
Priority date	Apr 28, 2016
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

Disclosed is a method for using a SiC container ( 3 ) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

First claim

The invention claimed is:

1. A method of using a SiC container in which Si vapor and C vapor are generated in an internal space therein during a heat treatment, wherein the SiC container serves as a raw material for a growth of an underlying substrate and is a fitted container including an upper container and a lower container that are fitted together, the method comprising:
housing a SiC substrate as the underlying substrate in an internal space of the SiC container; and
heating the SiC container with Si atmosphere around the SiC container, such that Si vapor enters the internal space of the SiC container through a gap between the upper container and the lower container,
wherein an outside atmosphere of the SiC container has an equilibrium vapor pressure of Si, and
wherein a partial pressure of vapor containing C atoms in an internal atmosphere of the SiC container is higher than that in the outside atmosphere of the SiC container.

2. The method of using a SiC container according to claim 1 , wherein
the SiC container is heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space of the SiC container.

3. The method of using a SiC container according to claim 1 , wherein
the SiC container is heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space of the SiC container.

4. The method of using a SiC container according to claim 1 , wherein
the SiC container is configured to include polycrystalline SiC.

5. The method of using a SiC container according to claim 1 , which comprises a vapor-phase epitaxial growth method for performing an epitaxial layer growth step, wherein
in a state in which a SiC container of a material including polycrystalline SiC is housed in a TaC container of a material including TaC and in which the underlying substrate is housed in the SiC container,
the TaC container is heated with a temperature gradient such that inside of the TaC container is at a Si vapor pressure from a Si source disposed on an inner wall of the TaC container or in the TaC container, and
C atoms sublimated by etching of an inner surface of the SiC container are bonded to Si atoms in an atmosphere, thereby causing an epitaxial layer of single crystalline SiC to grow on the underlying substrate.

6. The method of using a SiC container according to claim 1 , wherein
the internal space of the SiC container is a quasi-closed system during the heat treatment.

Assignees

• Kwansei Gakuin Educational Found
• Toyota Tsusho Corp

Inventors

• Kaneko Tadaaki
• Kutsuma Yasunori
• Ashida Koji
• Hashimoto Ryo

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title