Display substrates, display panels and display substrate manufacturing methods

Patent metadata

Field	Value
Publication number	US-12317699-B2
Application number	US-202117784398-A
Country	US
Kind code	B2
Filing date	Jun 3, 2021
Priority date	Jun 19, 2020
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer (2, 2A) and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.

First claim

The invention claimed is:

1. A display substrate, comprising:
a base substrate;
a metal light-shielding layer disposed on the base substrate;
a plurality of pixel units disposed on the base substrate;
a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units;
a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents; and
a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents so that light emission of the pixel units are compensated according to the photocurrents;
wherein output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer.

2. The display substrate according to claim 1 , wherein the first thin film transistors and the second thin film transistors are disposed in a same layer and are all top gate structures, and the photodiodes are located above the second thin film transistors.

3. The display substrate according to claim 1 , wherein the photodiodes are located over the first thin film transistors and the second thin film transistors, and each comprises a first electrode, a second electrode, and a photosensitive layer disposed between the first electrode and the second electrode, the first electrode is electrically connected to gates of one or more of the first thin film transistors and the second electrode is electrically connected to one or more of the second thin film transistors.

4. The display substrate according to claim 1 , wherein the display substrate comprises a plurality of the pixel units disposed along a column direction and a plurality of pixel circuit regions disposed along the column direction, each of the pixel units is located between a corresponding pixel circuit region and a corresponding photodiode, and the first thin film transistors are at least partially located in the pixel circuit regions.

5. The display substrate according to claim 1 , wherein the display substrate comprises a plurality of the pixel units disposed along a column direction, each of the photodiodes is located between two adjacent pixel units of the pixel units, and is configured to detect a luminous intensity of the two adjacent pixel units.

6. The display substrate according to claim 5 , wherein the display substrate comprises one or more dummy detection areas each located between two photodiodes adjacently disposed along a row direction.

7. The display substrate according to claim 1 , wherein each of the pixel units comprises a plurality of sub-pixel units, each of the plurality of sub-pixel units emitting light with a color different from that of others of the plurality of sub-pixel units.

8. The display substrate according to claim 3 , further comprising a detection signal line, a plurality of data signal lines and a plurality of third thin film transistors, wherein the data signal lines are respectively electrically connected to an input terminal of a corresponding one of the third thin film transistors, and for each of the first thin film transistors, a gate of the first thin film transistor is electrically connected to an output terminal of a corresponding third thin film transistor; and
the detection signal line is electrically connected to output terminals of the second thin film transistors, and the second electrode is electrically connected to input terminals of the plurality of second thin film transistors.

9. The display substrate according to claim 8 , wherein the detection signal line and the data signal lines are arranged along a column direction, and the pixel units are at least partially located between the detection signal line and the data signal lines.

10. A display panel comprising the display substrate according to claim 1 .

11. A method for manufacturing a display substrate, comprising:
providing a base substrate;
forming a metal light-shielding layer on the base substrate;
forming a plurality of first thin film transistors and a plurality of second thin film transistors on the metal light-shielding layer, output terminals of the first thin film transistors being electrically connected to the metal light-shielding layer;
forming a plurality of photodiode on the second thin film transistors;
forming an insulating cover layer over the photodiodes; and
forming a plurality of pixel units disposed on the insulating cover layer,
wherein the plurality of first thin film transistors are configured to drive the pixel units, the plurality of photodiodes are configured to convert light emitted from the pixel units into photocurrents, and the plurality of second thin film transistors are configured to receive the photocurrents.

12. The method according to claim 11 , wherein before forming the plurality of pixel units disposed on the insulating cover layer, the method further comprises: annealing the insulating cover layer.

13. The method according to claim 11 , wherein forming the plurality of pixel units disposed on the insulating cover layer comprises: forming a plurality of pixel electrodes on the insulating cover layer, the pixel electrodes being electrically connected to the output terminals of the first thin film transistors.

14. The method according to claim 11 , wherein the photodiodes each comprise a first electrode, a second electrode and a photosensitive layer disposed between the first and second electrodes, the first electrode is electrically connected to gates of one or more of the first thin film transistors and the second electrode is electrically connected to one or more of the second thin film transistors to transmit a photocurrent generated by the photodiode to the plurality of second thin film transistors.

Assignees

• Boe Technology Group Co Ltd

Inventors

• He Jiayu
• Ning ce
• Li Zhengliang
• Hu hehe
• Huang Jie
• Yao Nianqi

Classifications

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10K59/13

  comprising photosensors that control luminance · CPC title

• H10K59/1213

  the pixel elements being TFTs · CPC title