Solar cell and photovoltaic module

Patent metadata

Field	Value
Publication number	US-12317635-B2
Application number	US-202318295210-A
Country	US
Kind code	B2
Filing date	Apr 3, 2023
Priority date	Aug 20, 2021
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

First claim

What is claimed is:

1. A solar cell, comprising:
a substrate, wherein the substrate includes a silicon-based material and has a first surface and a second surface opposite to each other;
a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein the first oxygen-rich dielectric layer includes at least one of aluminum oxide, silicon oxide, silicon oxynitride, gallium oxide, titanium oxide, or hafnium oxide, the first silicon-rich dielectric layer includes a first silicon nitride material, the second oxygen-rich dielectric layer includes at least one of silicon oxide and silicon oxynitride, and the second silicon-rich dielectric layer includes a second silicon nitride material, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer, wherein an atomic fraction of silicon in the first silicon-rich dielectric layer is greater than an atomic fraction of silicon in the second silicon-rich dielectric layer, and the atomic fraction of the oxygen in the second oxygen-rich dielectric layer is greater than the atomic fraction of the silicon in the first silicon-rich dielectric layer;
a tunneling oxide layer disposed on the second surface;
a doped conductive layer disposed on a surface of the tunneling oxide layer; and
a second passivation layer disposed on a surface of the doped conductive layer.

2. The solar cell according to claim 1 , wherein the atomic fraction of oxygen in the first oxygen-rich dielectric layer is in a range of 40% to 70%, the first silicon-rich dielectric layer includes oxygen atoms and an atomic fraction of oxygen in the first silicon-rich dielectric layer is greater than 0% and less than or equal to 10%, the atomic fraction of oxygen in the second oxygen-rich dielectric layer is in a range of 50% to 80%, and the second silicon-rich dielectric layer includes oxygen atoms and an atomic fraction of oxygen in the second silicon-rich dielectric layer is greater than 0% and less than or equal to 10%.

3. The solar cell according to claim 2 , wherein the atomic fraction of oxygen in the first oxygen-rich dielectric layer is in a range of 40% to 60%, the atomic fraction of oxygen in the first silicon-rich dielectric layer is greater than 0% and less than or equal to 7%, and the atomic fraction of oxygen in the second silicon-rich dielectric layer is greater than 0% and less than or equal to 7%.

4. The solar cell according to claim 1 , wherein the atomic fraction of the silicon in the second silicon-rich dielectric layer is in a range of 30% to 60%, and the atomic fraction of the silicon in the first silicon-rich dielectric layer is in a range of 40% to 70%.

5. The solar cell according to claim 1 , wherein the first oxygen-rich dielectric layer includes an aluminum oxide layer and a silicon oxynitride layer, and the aluminum oxide layer is positioned between the silicon oxynitride layer and the substrate.

6. The solar cell according to claim 1 , wherein a ratio of the number of oxygen atoms to the number of aluminum atoms in the aluminum oxide is in a range of 0.6 to 2.4.

7. The solar cell according to claim 1 , wherein a refractive index of the first oxygen-rich dielectric layer is higher than a refractive index of the second oxygen-rich dielectric layer.

8. The solar cell according to claim 1 , wherein the first oxygen-rich dielectric layer includes a silicon oxide material, a refractive index of the first oxygen-rich dielectric layer is in a range of 1.58 to 1.61, and a thickness of the first oxygen-rich dielectric layer in a direction perpendicular to the first surface is in a range of 2 nm to 15 nm.

9. The solar cell according to claim 1 , wherein the first oxygen-rich dielectric layer includes a silicon oxynitride material, a refractive index of the first oxygen-rich dielectric layer is in a range of 1.61 to 1.71, and a thickness of the first oxygen-rich dielectric layer in a direction perpendicular to the first surface is in a range of 8 nm to 20 nm.

10. The solar cell according to claim 1 , wherein the first oxygen-rich dielectric layer includes an aluminum oxide material, a refractive index of the first oxygen-rich dielectric layer is in a range of 1.71 to 1.81, and a thickness of the first oxygen-rich dielectric layer in a direction perpendicular to the first surface is in a range of 1 nm to 20 nm.

11. The solar cell according to claim 1 , wherein the second oxygen-rich dielectric layer includes a silicon oxynitride material, a refractive index of the second oxygen-rich dielectric layer is in a range of 1.56 to 1.62, and a thickness of the second oxygen-rich dielectric layer in a direction perpendicular to the first surface is in a range of 5 nm to 20 nm.

12. The solar cell according to claim 1 , wherein a refractive index of the first silicon-rich dielectric layer is higher than a refractive index of the second silicon-rich dielectric layer.

13. The solar cell according to claim 12 , wherein the refractive index of the first silicon-rich dielectric layer is in a range of 2.02 to 2.2, and the refractive index of the second silicon-rich dielectric layer is in a range of 1.98 to 2.06.

14. The solar cell according to claim 1 , wherein a ratio of the number of silicon atoms to the number of nitrogen atoms in the first silicon nitride material is in a range of 0.66 to 2.3.

15. The solar cell according to claim 14 , wherein a refractive index of the first silicon-rich dielectric layer is in a range of 2.02 to 2.2, and a thickness of the first silicon-rich dielectric layer in a direction perpendicular to the first surface is in a range of 20 nm to 50 nm.

16. The solar cell according to claim 1 , wherein a ratio of the number of silicon atoms to the number of nitrogen atoms in the second silicon nitride material is in a range of 0.46 to 1.87.

17. The solar cell according to claim 16 , wherein a refractive index of the second silicon-rich dielectric layer is in a range of 1.98 to 2.06, and a thickness of the second silicon-rich dielectric layer in a direction perpendicular to the first surface is in a range of 20 nm to 50 nm.

18. The solar cell according to claim 1 , wherein a refractive index of the second passivation layer is in a range of 2.04 to 2.2, and a thickness of the second passivation layer in a direction perpendicular to the second surface is in a range of 60 nm to 100 nm.

19. A photovoltaic module comprising:
a cell string including a plurality of solar cells connected with each other;
a package adhesive film configured to cover a surface of the cell string;
a cover plate configured to cover a surface of the package adhesive film facing away from the cell string;
wherein the plurality of solar cells includes at least one solar cell of claim 1 .

20. The solar cell according to claim 1 , wherein the atomic fraction of the oxygen in the first oxygen-rich dielectric layer is greater than an atomic fraction of oxygen in the first silicon-rich dielectric layer and greater than an atomic fraction of oxygen in the second silicon-rich dielectric layer.

Assignees

• Shanghai Jinko Green Energy Enterprise Man Co Ltd
• Zhejiang Jinko Solar Co Ltd
• Jinko Green Energy Shanghai Man Co Ltd

Inventors

• Li Wenqi
• Yu Ding
• Yang Jie
• Zhang Xinyu
• Jin Hao

Classifications

• H10F77/707

  of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate · CPC title

• H10F19/902

  for series or parallel connection of photovoltaic cells · CPC title

• H10F19/80

  Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells · CPC title

• H10F10/165

  the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells · CPC title

• H10F77/311 Primary

  for photovoltaic cells · CPC title