Semiconductor device

Patent metadata

Field	Value
Publication number	US-12317581-B2
Application number	US-202418774245-A
Country	US
Kind code	B2
Filing date	Jul 16, 2024
Priority date	Mar 19, 2020
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor part including first and second regions, the first and second regions being arranged in a direction along a front surface of the semiconductor part, a plurality of first trenches being provided in the first region at the front surface side, a plurality of second trenches being provided in the second region at the front surface side;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on the front surface of the semiconductor part;
a plurality of first control electrodes provided between the semiconductor part and the second electrode, the first control electrodes being provided inside the first trenches, respectively, the first control electrodes each being electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film; and
a plurality of second control electrodes provided between the semiconductor part and the second electrode, the second control electrodes being provided inside the second trenches, respectively, the second control electrodes each being electrically insulated from the semiconductor part by a third insulating film and electrically insulated from the second electrode by a fourth insulating film,
the semiconductor part including a first layer of a first conductivity type, a second layer of a second conductivity type, a third layer of the second conductivity type, a fourth layer of the second conductivity type, and a fifth layer of the first conductivity type,
the first layer extending between the first and second electrodes, the plurality of first control electrodes and the plurality of second control electrodes extending into the first layer from the front surface side of the semiconductor part,
the second layer being provided between mutually-adjacent of the first control electrodes of the plurality of first control electrodes, the second layer being provided between the first layer and the second electrode, the second layer being connected to the second electrode,
the third layer being provided between the second layer and the first control electrode, the third layer contacting the second layer and the first insulating film, the third layer including a second conductivity-type impurity with a higher concentration than a concentration of a second conductivity-type impurity in the second layer, the third layer contacting the second electrode and being electrically connected to the second electrode,
the fourth layer being provided between mutually-adjacent of the second control electrodes of the plurality of second control electrodes, the fourth layer facing the mutually-adjacent second control electrodes respectively via the third insulating film,
the fifth layer being provided between the fourth layer and the second electrode, the fifth layer contacting the third insulating film and being electrically connected to the second electrode, and
an interface between the first layer and the third layer being at a same level as an interface between the first layer and the second layer in a first direction directed from the first electrode toward the second electrode.

2. The device according to claim 1 , wherein
the semiconductor part further includes a sixth layer of the second conductivity type provided between the first layer and the first electrode in the second region.

3. The device according to claim 2 , wherein
the semiconductor part further includes a seventh layer of the first conductivity type provided between the first layer and the first electrode in the first region, the seventh layer including a first conductivity-type impurity with a higher concentration than a concentration of a first conductivity-type impurity in the first layer, and
a boundary between the sixth and seventh layers is positioned between the first and second regions.

4. The device according to claim 1 , wherein
the semiconductor part further includes an eighth layer of the second conductivity type provided between the mutually-adjacent second control electrodes, the eighth layer being provided between the fourth layer and the second electrode, the eighth layer including a second conductivity-type impurity with a higher concentration than a concentration of a second conductivity-type impurity in the fourth layer, the eighth layer being electrically connected to the second electrode.

5. A method for controlling a semiconductor device,
the device comprising:
a semiconductor part including a trench at a front surface side;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on the front surface of the semiconductor part; and
a control electrode provided between the semiconductor part and the second electrode inside the trench, the control electrode being electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film,
the semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the second conductivity type,
the first semiconductor layer extending between the first and second electrodes,
the control electrode extending into the first semiconductor layer from the front surface side of the semiconductor part,
the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the second semiconductor layer being connected to the second electrode,
the third semiconductor layer being provided between the second semiconductor layer and the control electrode, the third semiconductor layer contacting the second semiconductor layer and the first insulating film, the third semiconductor layer including a second-conductivity-type impurity with a higher concentration than a concentration of a second-conductivity-type impurity in the second semiconductor layer, the third semiconductor layer contacting the second electrode and being electrically connected to the second electrode,

an interface between the first semiconductor layer and the third semiconductor layer being at a same level as an interface between the first semiconductor layer and the second semiconductor layer in a first direction directed from the first electrode toward the second electrode,
the method comprising:
applying a negative voltage between the second electrode and the control electrode, while inverting a forward voltage applied between the first and second electrodes to a backward voltage,
wherein the forward voltage makes a potential of the second electrode to be less than a potential of the first electrode, and the backward voltage makes the potential of the second electrode to be greater than the potential of the first electrode.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Itokazu Hiroko
• Matsudai Tomoko
• Iwakaji Yoko
• Motai Takako

Classifications

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title

• H10D62/108

  having localised breakdown regions, e.g. built-in avalanching regions  (in self-protected thyristors H10D18/211) · CPC title

• H10D12/481 Primary

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D62/128

  Anode regions of diodes · CPC title

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title