Analog amplitude pre-distortion circuit and method

US12316283B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12316283-B2
Application numberUS-202318348415-A
CountryUS
Kind codeB2
Filing dateJul 7, 2023
Priority dateJul 13, 2022
Publication dateMay 27, 2025
Grant dateMay 27, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An analog amplitude pre-distortion circuit includes a Radio Frequency, RF, input for receiving an RF signal. The circuit also includes an amplifier stage comprising an amplifier stage input for receiving the RF signal from the RF input, where the amplifier stage is operable to amplify the RF signal to produce an amplified RF signal. The circuit further includes a bias circuit. The bias circuit includes a detector stage for detecting an amplitude of the RF signal, and for producing a correction signal based on the amplitude of the RF signal. The bias circuit also includes a bias application stage coupled to the amplifier stage input.

First claim

Opening claim text (preview).

The invention claimed is: 1. An analog amplitude pre-distortion circuit comprising: a Radio Frequency, RF, input for receiving an RF signal; an amplifier stage comprising an amplifier stage input coupled to the RF input for receiving the RF signal, wherein the amplifier stage is operable to amplify the RF signal to produce an amplified RF signal; and a bias circuit including a transistor having a first current terminal, a second current terminal and a control terminal, wherein the first current terminal is coupled to the amplifier stage input and wherein the second current terminal is coupled to a reference potential, a resistor coupled between the amplifier stage input and the control terminal of the transistor, a variable reactance component comprising a variable capacitor coupled between the amplifier stage input and the control terminal of the transistor, a controller for programmably controlling the variable reactance component to vary a capacitance of the variable reactance component, and a capacitor coupled between the control terminal and the reference potential, wherein the bias circuit is operable to detect an amplitude of the RF signal, apply a bias voltage at a first range of frequencies according to the amplitude of the RF signal at first impedances to the amplifier stage input, and present second impedances at a second range of frequencies to the amplifier stage input, wherein the first impedances are lower than the second impedances and wherein the first range of frequencies are lower than the second range of frequencies. 2. The circuit of claim 1 , further comprising an output for outputting an amplified RF signal from the amplifier stage. 3. The circuit of claim 1 , further comprising a current source coupled to the first current terminal. 4. The circuit of claim 1 , wherein the transistor is a bipolar transistor, wherein the first current terminal is a collector terminal of the bipolar transistor, wherein the second current terminal is an emitter terminal of the bipolar transistor, and wherein the control terminal is a base terminal of the bipolar transistor. 5. The circuit of claim 1 , wherein the amplifier stage input comprises a control terminal of a transistor. 6. The circuit of claim 1 , further comprising a DC-blocking capacitor coupled between the RF input and the amplifier stage input. 7. A power amplifier or a low noise amplifier comprising: a Radio Frequency, RF, input for receiving an RF signal; an amplifier stage comprising an amplifier stage input coupled to the RF input for receiving the RF signal, wherein the amplifier stage is operable to amplify the RF signal to produce an amplified RF signal; and a bias circuit including a transistor having a first current terminal, a second current terminal and a control terminal, wherein the first current terminal is coupled to the amplifier stage input and wherein the second current terminal is coupled to a reference potential, a resistor coupled between the amplifier stage input and the control terminal of the transistor, a variable reactance component comprising a variable capacitor coupled between the amplifier stage input and the control terminal of the transistor, a controller for programmably controlling the variable reactance component to vary a capacitance of the variable reactance component, and a capacitor coupled between the control terminal and the reference potential, wherein the bias circuit is operable to detect an amplitude of the RF signal, apply a bias voltage at a first range of frequencies according to the amplitude of the RF signal at first impedances to the amplifier stage input, and present second impedances at a second range of frequencies to the amplifier stage input, wherein the first impedances are lower than the second impedances and wherein the first range of frequencies are lower than the second range of frequencies. 8. An analog amplitude pre-distortion method comprising: receiving a Radio Frequency, RF, signal; using an amplifier stage to amplify the RF signal to produce an amplified RF signal; and applying bias voltages to an input of the amplifier stage by detecting an amplitude of the RF signal, applying a bias voltage at a first range of frequencies according to the amplitude of the RF signal at first impedances to the amplifier stage input, and presenting second impedances at a second range of frequencies to the amplifier stage input, wherein the first impedances are lower than the second impedances and wherein the first range of frequencies are lower than the second range of frequencies, wherein a bias circuit is used to apply the bias voltages to the amplifier stage input, wherein the bias circuit includes a transistor having a first current terminal, a second current terminal and a control terminal, wherein the first current terminal is coupled to an amplifier stage input of the amplifier stage and wherein the second current terminal is coupled to a reference potential, a resistor and a variable reactance component comprising a variable capacitor coupled in parallel between the amplifier stage input and the control terminal of the transistor, and a capacitor coupled between the control terminal and the reference potential, and wherein the method further comprises programmably controlling the variable reactance component to vary a capacitance of the variable reactance component, to vary the bias voltages applied to the amplifier stage input. 9. The method of claim 8 , wherein the transistor is a bipolar transistor, wherein the first current terminal is a collector terminal of the bipolar transistor, wherein the second current terminal is an emitter terminal of the bipolar transistor, and wherein the control terminal is a base terminal of the bipolar transistor. 10. The method of claim 8 , wherein the amplifier stage input comprises a control terminal of a transistor.

Assignees

Inventors

Classifications

  • in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence) · CPC title

  • to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators {(modulation H03C)} · CPC title

  • in integrated circuits · CPC title

  • the amplifier being a radio frequency amplifier · CPC title

  • A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier · CPC title

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What does patent US12316283B2 cover?
An analog amplitude pre-distortion circuit includes a Radio Frequency, RF, input for receiving an RF signal. The circuit also includes an amplifier stage comprising an amplifier stage input for receiving the RF signal from the RF input, where the amplifier stage is operable to amplify the RF signal to produce an amplified RF signal. The circuit further includes a bias circuit. The bias circuit …
Who is the assignee on this patent?
Nxp Usa Inc
What technology area does this patent fall under?
Primary CPC classification H03F1/3241. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 27 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).