Protection circuit for high temperature reverse bias test

Patent metadata

Field	Value
Publication number	US-12316099-B2
Application number	US-202217923597-A
Country	US
Kind code	B2
Filing date	Jun 28, 2022
Priority date	Jun 28, 2022
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

The present disclosure provides a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising: a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal; a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch such that the drain-source leakage current is blocked by the switch when the current-sensing signal is higher than a reference voltage.

First claim

The invention claimed is:

1. A protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising:
a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal;
a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and
a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch, and when the current-sensing signal is higher than a reference voltage, the driving circuit is configured to transmit the driving signal to the switch to control the switch to disconnect the protection circuit from the electronic device, such that a drain source leakage current is blocked by the switch;
wherein:
the switch has a first conduction terminal connected to the electronic device;
the current-sensing circuit has an input terminal connected to a second conduction terminal of the switch and a ground terminal connected to a negative terminal of a power supply; and
the driving circuit has an input terminal connected to an output terminal of the current-sensing circuit, a ground terminal connected to the negative terminal of the power supply, and an output terminal connected to a control terminal of the switch;

wherein the driving circuit comprises:
a comparator configured to receive the current-sensing signal and compare the current-sensing signal with the reference voltage to generate a comparison output signal;
an internal reference voltage supply configured to provide the reference voltage to the comparator; and
a latch configured to receive the comparison output signal and generate the driving signal;

wherein the switch is a normally-off switch;
wherein the comparator of the driving circuit has a non-inverting input terminal connected to an input terminal of the driving circuit and an inverting input terminal connected to the internal reference voltage supply; and the latch of the driving circuit is a rising-edge triggered latch having a reset terminal connected to an output terminal of the comparator and an inverted output terminal connected to the output terminal of the driving circuit; or
the comparator of the driving circuit has a non-inverting input terminal connected to the internal reference voltage supply and an inverting input terminal connected to an input terminal of the driving circuit; and the latch of the driving circuit is a falling-edge triggered latch having a reset terminal connected to an output terminal of the comparator and an inverted output terminal connected to the output terminal of the driving circuit.

2. The protection circuit according to claim 1 , wherein the switch is an enhancement-mode field effect transistor.

3. A high temperature reverse bias (HTRB) testing system comprising the protection circuit according to claim 1 .

4. A method for implementing a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, comprising:
connecting a first conduction terminal of a switch to the electronic device;
connecting an input terminal of a current-sensing circuit to a second conduction terminal of the switch;
connecting a ground terminal of the current-sensing circuit to a negative terminal of a power supply;
connecting an input terminal of a driving circuit to an output terminal of the current-sensing circuit;
connecting a ground terminal of the driving circuit to the negative terminal of the power supply;
connecting an output terminal of the driving circuit to a control terminal of the switch;
configuring the switch to connect/disconnect the protection circuit to/from the electronic device based on a switching signal;
configuring the current-sensing circuit to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and
configuring the driving circuit to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch, and when the current-sensing signal is higher than a reference voltage, configuring the driving circuit to transmit the driving signal to the switch to control the switch to disconnect the protection circuit from the electronic device, such that a drain source leakage current is blocked by the switch;
wherein the switch is a normally-off switch, and the driving circuit is configured by:
connecting a non-inverting input terminal of a comparator to an input terminal of the driving circuit; connecting an inverting input terminal of the comparator to an internal reference voltage; connecting a reset terminal of a rising-edge triggered latch to an output terminal of the comparator; and connecting an inverted output terminal of the rising-edge triggered latch to the output terminal of the driving circuit; or,
connecting a non-inverting input terminal of a comparator to an internal reference voltage; connecting an inverting input terminal of the comparator to an input terminal of the driving circuit; connecting a reset terminal of a falling-edge triggered latch to an output terminal of the comparator; and connecting an inverted output terminal of the falling-edge triggered latch to the output terminal of the driving circuit.

5. A protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising:
a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal;
a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and
a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch, and when the current-sensing signal is higher than a reference voltage, the driving circuit is configured to transmit the driving signal to the switch to control the switch to disconnect the protection circuit from the electronic device, such that a drain source leakage current is blocked by the switch;
wherein:
the switch has a first conduction terminal connected to the electronic device;
the current-sensing circuit has an input terminal connected to a second conduction terminal of the switch and a ground terminal connected to a negative terminal of a power supply; and
the driving circuit has an input terminal connected to an output terminal of the current-sensing circuit, a ground terminal connected to the negative terminal of the power supply, and an output terminal connected to a control terminal of the switch;

wherein the driving circuit comprises:
a comparator configured to receive the current-sensing signal and compare the current-sensing signal with the reference voltage to generate a comparison output signal;
an internal reference voltage supply configured to provide the reference voltage to the comparator; and
a latch configured to receive the comparison output signal and generate the driving signal;

wherein the switch is a normally-on switch;
wherein the comparator of the driving circuit has a non-inverting input terminal connected to an input terminal of the driving circuit and an inverting input terminal connected to the internal reference voltage supply; and the latch of the driving circuit is a rising-edge triggered latch having a reset terminal connected to an output terminal of the comparator and a non-inverting output terminal connected to the output terminal of

Assignees

• Innoscience Suzhou Semiconductor Co Ltd

Inventors

• Lin Yiming
• Hu Kai
• Sheng Jianjian

Classifications

• G01R31/2849

  Environmental or reliability testing, e.g. burn-in or validation tests (of individual semiconductors G01R31/2642; of printed circuits boards G01R31/2817; of IC's G01R31/2855) · CPC title

• H03K17/0828

  in composite switches · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title

• G01R1/36

  Overload-protection arrangements or circuits for electric measuring instruments · CPC title

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title