Method for manufacturing metal oxynitride film

Patent metadata

Field	Value
Publication number	US-12315717-B2
Application number	US-202318232881-A
Country	US
Kind code	B2
Filing date	Aug 11, 2023
Priority date	Jul 6, 2018
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

First claim

The invention claimed is:

1. An element comprising a metal oxynitride film,
wherein the metal oxynitride film is provided on a single crystal substrate,
wherein the metal oxynitride film comprises zinc, indium, and gallium,
wherein the metal oxynitride film is an in-plane oriented film having regularity of crystal orientation in a horizontal direction with respect to the single crystal substrate by c-axis epitaxial growth,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle ψ of around 0°, and
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle ψ of greater than or equal to 61° and less than or equal to 65°.

2. The element according to claim 1 ,
wherein the single crystal substrate is an yttria-stabilized zirconia (YSZ) substrate, and
wherein a plane orientation of the yttria-stabilized zirconia (YSZ) substrate is (111).

3. The element according to claim 1 ,
wherein the single crystal substrate is a sapphire substrate, and
wherein a plane orientation of the sapphire substrate is (110).

4. The element according to claim 1 , wherein a crystal structure of the metal oxynitride film is a wurtzite structure.

5. The element according to claim 1 , wherein when pole measurement is performed on the metal oxynitride film, a diffraction peak indicating six-fold symmetry is observed in a φ scan on a (101) plane of a crystal of the metal oxynitride film in the pole measurement.

6. The element according to claim 1 ,
wherein a half-width of the first spot is less than 2°, and equal to 65°, and
wherein a half-width of the second spot is less than 2°.

7. A display device comprising:
a light-emitting element comprising the element according to claim 1 ; and
a transistor electrically connected to the light-emitting element.

8. An element comprising a metal oxynitride film,
wherein the metal oxynitride film is provided on a surface of a single crystal substrate,
wherein the metal oxynitride film comprises zinc, indium, and gallium,
wherein the metal oxynitride film is a c-axis epitaxial film in which a c-axis direction of crystals corresponds to a normal direction of the surface of the single crystal substrate,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle w of around 0°, and
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle ψof greater than or equal to 61° and less than or equal to 65°.

9. The element according to claim 8 ,
wherein the single crystal substrate is an yttria-stabilized zirconia (YSZ) substrate, and
wherein a plane orientation of the yttria-stabilized zirconia (YSZ) substrate is (111).

10. The element according to claim 8 ,
wherein the single crystal substrate is a sapphire substrate, and
wherein a plane orientation of the sapphire substrate is (110).

11. The element according to claim 8 , wherein a crystal structure of the metal oxynitride film is a wurtzite structure.

12. The element according to claim 8 , wherein when pole measurement is performed on the metal oxynitride film, a diffraction peak indicating six-fold symmetry is observed in a φ scan on a (101) plane of a crystal of the metal oxynitride film in the pole measurement.

13. The element according to claim 8 ,
wherein a half-width of the first spot is less than 2°, and
wherein a half-width of the second spot is less than 2°.

14. A display device comprising:
a light-emitting element comprising the element according to claim 8 ; and
a transistor electrically connected to the light-emitting element.

15. A display device comprising:
a light-emitting element comprising a metal oxynitride film formed on a surface of a single crystal substrate,
wherein the metal oxynitride film comprises zinc, indium, and gallium,
wherein the metal oxynitride film is c-axis epitaxial film in which a c-axis direction of crystals corresponds to a normal direction of the surface of the single crystal substrate,
wherein a crystal structure of the metal oxynitride film is a wurtzite structure,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle ψ of around 0°, and
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle ψ of greater than or equal to 61° and less than or equal to 65°.

16. The display device according to claim 15 ,
wherein the single crystal substrate is an yttria-stabilized zirconia (YSZ) substrate, and
wherein a plane orientation of the yttria-stabilized zirconia (YSZ) substrate is (111).

17. The display device according to claim 15 ,
wherein the single crystal substrate is a sapphire substrate, and
wherein a plane orientation of the sapphire substrate is (110).

18. The display device according to claim 15 , wherein when pole measurement is performed on the metal oxynitride film, a diffraction peak indicating six-fold symmetry is observed in a ψ scan on a ( 101 ) plane of a crystal of the metal oxynitride film in the pole measurement.

19. The display device according to claim 15 ,
wherein a half-width of the first spot is less than 2°, and
wherein a half-width of the second spot is less than 2°.

20. The display device according to claim 15 , further comprising:
a transistor electrically connected to the light-emitting element.

Assignees

• Semiconductor Energy Lab

Inventors

• Tanemura Kazuki
• Sambonsuge Shota
• Okuno Naoki

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H10P14/6329 Primary

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title