Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory

Patent metadata

Field	Value
Publication number	US-12315554-B2
Application number	US-202318166378-A
Country	US
Kind code	B2
Filing date	Feb 8, 2023
Priority date	Aug 24, 2021
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A decoding drive circuit includes at least one decoding driver. The decoding driver includes a first-stage drive circuit and a second-stage drive circuit. Herein, the first-stage drive circuit is configured to receive an enabling control signal, a decoding input signal and a drive control signal, and generate a first drive signal and a second drive signal according to the enabling control signal, the drive control signal and the decoding input signal. The second-stage drive circuit is configured to generate a target word line drive signal according to the first drive signal and the second drive signal. Thus, the embodiments of the disclosure provide a new decoding drive circuit.

First claim

What is claimed is:

1. A decoding drive circuit, the decoding drive circuit comprising at least one decoding driver, the decoding driver comprising a first-stage drive circuit and a second-stage drive circuit, wherein
the first-stage drive circuit is configured to receive an enabling control signal, a decoding input signal and a drive control signal, and generate a first drive signal and a second drive signal according to the enabling control signal, the drive control signal and the decoding input signal,
wherein the second-stage drive circuit is configured to generate a target word line drive signal according to the first drive signal and the second drive signal;
wherein a first end of the first switch transistor is connected to an output end of the first-stage drive circuit for receiving the first drive signal; a first end of the second switch transistor is connected to other output end of the first-stage drive circuit for receiving the second drive signal;
a second end of the first switch transistor is connected to a first power supply terminal, and a second end of the second switch transistor is connected to a grounding terminal; and
a third end of the first switch transistor is connected to a third end of the second switch transistor for outputting the target word line drive signal;
wherein the decoding drive circuit further comprises an enabling control circuit, an output end of the enabling control circuit is connected to an input end of the first-stage drive circuit,
wherein the enabling control circuit is configured to generate the enabling control signal according to the drive control signal;
wherein the drive control signal comprises a first drive control signal and a second drive control signal, the first-stage drive circuit comprises a first control circuit and a second control circuit, wherein
the first control circuit is configured to perform drive control on the decoding input signal according to the first drive control signal and the enabling control signal to generate the first drive signal,
wherein the second control circuit is configured to perform drive control on the decoding input signal according to the first drive control signal, the second drive control signal and the enabling control signal to generate the second drive signal,
wherein a level state of the first drive control signal is different from a level state of the second drive control signal.

2. The decoding drive circuit of claim 1 , wherein the second-stage drive circuit comprises a first switch transistor and a second switch transistor,
wherein the second-stage drive circuit is specifically configured to control operating state of the first switch transistor according to the first drive signal and control operating state of the second switch transistor according to the second drive signal, and generate the target word line drive signal according to the operating state of the first switch transistor and the operating state of the second switch transistor.

3. The decoding drive circuit of claim 2 , wherein
the second-stage drive circuit is specifically configured to control the target word line drive signal to be in a first level state when the first switch transistor is in a turn-on state and the second switch transistor is in a turn-off state; or
the second-stage drive circuit is specifically configured to control the target word line drive signal to be in a second level state when the first switch transistor is in the turn-off state and the second switch transistor is in the turn-on state; or
the second-stage drive circuit is specifically configured to control the target word line drive signal to be in a third level state when the first switch transistor is in the turn-off state and the second switch transistor is in the turn-off state.

4. The decoding drive circuit of claim 3 , wherein the first level state is a high level state, the second level state is a low level state, and the third level state is a Floating state.

5. The decoding drive circuit of claim 1 , wherein the enabling control circuit comprises a third switch transistor, the first control circuit comprises a fourth switch transistor, a fifth switch transistor and a sixth switch transistor,
wherein a first end of the third switch transistor and a first end of the fourth switch transistor receive the first drive control signal, a first end of the fifth switch transistor and a first end of the sixth switch transistor receives the decoding input signal,
a third end of the fourth switch transistor, a third end of the fifth switch transistor and a third end of the sixth switch transistor are all connected to an output end of the first-stage drive circuit for outputting the first drive signal, and
a third end of the third switch transistor is connected to a second end of the sixth switch transistor, a second end of the third switch transistor is connected to a grounding terminal, a second end of the fourth switch transistor is connected to a second power supply terminal, and a second end of the fifth switch transistor is connected to a third power supply terminal.

6. The decoding drive circuit of claim 5 , wherein the enabling control circuit further comprises a seventh switch transistor and an eighth switch transistor, the second control circuit comprises a ninth switch transistor, a tenth switch transistor, an eleventh switch transistor and a twelfth switch transistor,
wherein a first end of the seventh switch transistor and a first end of the twelfth switch transistor receive the first drive control signal, a first end of the eighth switch transistor and a first end of the ninth switch transistor receive the second drive control signal, a first end of the tenth switch transistor and a first end of the eleventh switch transistor receive the decoding input signal,
a third end of the ninth switch transistor, a third end of the tenth switch transistor, a third end of the eleventh switch transistor and a third end of the twelfth switch transistor are all connected to other output end of the second-stage drive circuit for outputting the second drive signal,
a third end of the eighth switch transistor, a second end of the tenth switch transistor is connected to a second end of the twelfth switch transistor, a third end of the seventh switch transistor is connected to a second end of the eleventh switch transistor, a second end of the seventh switch transistor is connected to the grounding terminal, a second end of the eighth switch transistor is connected to a fourth power supply terminal, and a second end of the ninth switch transistor is connected to the grounding terminal.

7. The decoding drive circuit of claim 6 , wherein types of the first switch transistor, the second switch transistor, the third switch transistor, the fourth switch transistor, the fifth switch transistor, the sixth switch transistor, the seventh switch transistor, the eighth switch transistor, the ninth switch transistor, the tenth switch transistor, the eleventh switch transistor and the twelfth switch transistor are Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs),
wherein a first end of the MOSFET is a gate, a second end of the MOSFET is a source, and a third end of the MOSFET is a drain.

8. The decoding drive circuit of claim 7 , wherein
types of the first switch transistor, the fourth switch transistor, the fifth switch transistor, the eighth switch transistor, the tenth switch transistor and the twelfth switch transistor are P-type channel MOSFETS,
wherein types of the first switch transistor, the third switch transistor, the sixth switch transistor, the seventh switch transistor, the ninth switch transistor and the eleventh switch transistor are N-type channel MOSFETs.

9. A method for

Assignees

• Changxin Memory Tech Inc

Inventors

• Shang Weibing
• Wu Xianjun
• Li Minghao

Classifications

• G11C11/4087

  Address decoders, e.g. bit - or word line decoders; Multiple line decoders · CPC title

• G11C29/12005

  comprising voltage or current generators · CPC title

• G11C2029/1202

  Word line control · CPC title

• G11C29/025

  in signal lines · CPC title

• G11C11/4085 Primary

  Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge · CPC title