Detection device comprising photodiodes with stacked organic semiconductor layers

Patent metadata

Field	Value
Publication number	US-12313460-B2
Application number	US-202418742015-A
Country	US
Kind code	B2
Filing date	Jun 13, 2024
Priority date	Dec 15, 2021
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

According to an aspect, a detection device includes: a first detection circuit including a first photodiode sensitive to first light and a second photodiode sensitive to second light; and a second detection circuit including a third photodiode sensitive to third light. The first photodiode and the second photodiode are coupled in series and in opposite directions to form a first detection element. One end side of the first detection element is coupled to a first signal line via a first transistor. Another end side of the first detection element is configured to be supplied with a first drive signal. A cathode of the third photodiode is coupled to a second signal line via a second transistor. An anode of the third photodiode is configured to be supplied with a second drive signal.

First claim

What is claimed is:

1. A detection device comprising:
a first detection circuit comprising a first photodiode sensitive to first light and a second photodiode sensitive to second light; and
a second detection circuit comprising a third photodiode sensitive to third light,
wherein
the first photodiode and the second photodiode are coupled in series and in
opposite directions to form a first detection element,
one end side of the first detection element is coupled to a first signal line via a first transistor,
another end side of the first detection element is configured to be supplied with a first drive signal,
a cathode of the third photodiode is coupled to a second signal line via a second transistor, and
an anode of the third photodiode is configured to be supplied with a second drive
signal,
wherein
the first photodiode comprises a first organic semiconductor layer sensitive to the first light,
the second photodiode comprises a second organic semiconductor layer sensitive to the second light,
the third photodiode comprises a multilayered structure in which the first organic semiconductor layer and the second organic semiconductor layer are stacked, and
the second detection circuit comprises the third photodiode and a wavelength conversion layer that is configured to convert the third light into the first light or the second light.

2. The detection device according to claim 1 , wherein
the first organic semiconductor layer that forms the first photodiode and the first organic semiconductor layer that forms the third photodiode are continuously formed in a same layer, and
the second organic semiconductor layer that forms the second photodiode and the second organic semiconductor layer that forms the third photodiode are continuously formed in a same layer.

3. The detection device according to claim 1 , comprising:
a reflective layer that faces the wavelength conversion layer; and
a light-blocking layer, wherein
the wavelength conversion layer and the reflective layer are provided, in the order as listed, on a surface opposite to a light incidence surface of the first organic semiconductor layer and the second organic semiconductor layer, and
the light-blocking layer is provided between the wavelength conversion layer and the first and the second organic semiconductor layers in an area overlapping the first detection circuit.

4. The detection device according to claim 1 , comprising:
a reflective layer that faces the wavelength conversion layer; and
a light-blocking layer, wherein
the wavelength conversion layer and the reflective layer are provided, in the order as listed, on a surface opposite to a light incidence surface of the first organic semiconductor layer and the second organic semiconductor layer, and
the light-blocking layer is provided on the light incidence surface side of the first organic semiconductor layer and the second organic semiconductor layer in an area overlapping the second detection circuit.

5. The detection device according to claim 1 , comprising a signal processing circuit configured to receive output signals from the first detection circuit and the second detection circuit and process the signals, wherein
the signal processing circuit is configured to calculate a detection value of the second detection circuit by subtracting an output value of the output signal of the first detection circuit from an output value of the output signal of the second detection circuit.

6. The detection device according to claim 1 , wherein
the first light is red light,
the second light is green light, and
the third light is blue light.

Assignees

• Japan Display Inc
• Univ Tokyo

Inventors

• Saito Keiichi
• Nakamura Takashi
• Koide Gen
• Someya Takao
• Yokota Tomoyuki

Classifications

• H10K39/32

  Organic image sensors · CPC title

• G01J2001/446

  Photodiode · CPC title

• H10F30/20

  the devices having potential barriers, e.g. phototransistors · CPC title

• H10F39/12

  Image sensors · CPC title

• G06T1/00

  General purpose image data processing · CPC title