Integrated structure for an optoelectronic device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-12310159-B2
Application number	US-202017622097-A
Country	US
Kind code	B2
Filing date	Jun 24, 2020
Priority date	Jun 28, 2019
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

First claim

The invention claimed is:

1. An integrated structure for an optoelectronic device, the integrated structure comprising:
a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device;
a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers, each optical element comprising of a light emitting layer disposed between top and bottom contact layers;
a first bonding dielectric provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and
a second bonding dielectric provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent;
wherein, for each of the device layers, the driver circuit is connected to the optical element in the device layer via a vertical interconnect formed in a dielectric material of the device layer, wherein the vertical interconnect is connected to a surface of one of the top and bottom contact layers, said surface facing away from the CMOS backplane; and/or
wherein the integrated structure comprises one or more redundant tungsten plugs to prevent crosstalk between adjacent optical elements.

2. The integrated structure of claim 1 , wherein the second bonding dielectric is the same as the first bonding dielectric.

3. The integrated structure of claim 1 , wherein each device layer comprises a reflector disposed below a first optical element in said each device layer, wherein the reflector is configured to be reflective at a first operating wavelength range of a first optical element, and optionally wherein the reflector is configured to be transmissive at a second operating wavelength range of a second optical element in a lower device layer and/or optionally wherein the reflector comprises a distributed Bragg reflector, DBR, and/or optionally wherein at least a portion of an electrical interconnection metal in each device layer functions as the reflector.

4. The integrated structure of claim 1 , wherein respective top contacts of the optical elements in the same device layer are connected to a common top electrode, and respective bottom contacts of the optical elements in the same device layer are individually connected to the driver circuit.

5. The integrated structure of claim 1 , wherein respective bottom contacts of the optical elements in the same device layer are connected to a common electrode, and respective top contacts of the optical elements in the same device layer are individually connected to the driver circuit, and optionally comprising micro-trenches patterned between optical elements in the same device layer through the common bottom electrode to achieve optical isolation between the optical elements in the same device layer without breaking the electrical continuity of the common bottom electrode, and/or optionally comprising metal pads, lines or net patterned on the common bottom electrode with direct electrical contact to enhance current spreading.

6. The integrated structure of claim 4 , comprising micro-structures patterned on respective bottom layers of the optical elements to enhance a light extraction from the optical elements.

7. The integrated structure of claim 4 , comprising a photonic crystal structure patterned on respective bottom layers of the optical elements to increase an emission directionality of light from the optical elements.

8. The integrated structure of claim 1 , wherein at least some of the optical elements in different device layer are horizontally interlaced, and/or optionally further comprising electrical interconnections including one or more of a group consisting of chemical mechanical planarization based contact, tungsten plug, and metal pad, and/or optionally further comprising at least one micro-lens to assist light collimation.

9. The integrated structure of claim 1 , wherein at least some of the optical elements in different device layer at least partially overlap, and optionally wherein the optical devices comprise at least partially overlapping RGB micro-light emitting diodes, micro-LEDs, in a pixel arrangement for enhancing color mixing.

10. The integrated structure of claim 1 , wherein the driver circuit is connected to one or more of the device layers via an interface between a metal layer of the driver circuit and a vertical interconnect in the one or more of the device layers.

11. A method of fabricating an integrated structure for an optoelectronic device, the method comprising the steps of:
providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and
providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers, each optical element comprising of a light emitting layer disposed between top and bottom contact layers;
wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and
wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent;
wherein the method further comprises:
for each of the device layers, connecting the driver circuit to the optical element in the device layer via a vertical interconnect formed in a dielectric material of the device layer, wherein the vertical interconnect is connected to a surface of one of the top and bottom contact layers, said surface facing away from the CMOS backplane; and/or
providing one or more redundant tungsten plugs to prevent crosstalk between adjacent optical elements.

12. The method of claim 11 , wherein the second bonding dielectric is the same as the first bonding dielectric.

13. The method of claim 11 , comprising providing, in each device layer, a reflector disposed below a first optical element in said each device layer, wherein the reflector is configured to be reflective at a first operating wavelength range of a first optical element, and optionally wherein the reflector is configured to be transmissive at a second operating wavelength range of a second optical element in a lower device layer, and/or optionally wherein the reflector comprises a distributed Bragg reflector, DBR, and/or optionally comprising providing, in each device layer, an electrical interconnection metal, wherein at least a portion of an electrical interconnection metal functions as the reflector.

14. The method of claim 11 , comprising connecting respective top contacts of the optical elements in the same device layer to a common top electrode, and connecting respective bottom contacts of the optical elements in the same device layer individually to the driver circuit.

15. The method of any claim 11 , comprising connecting respective bottom contacts of the optical elements in the same device layer to a common electrode, and connecting respective top contacts of the optical elements in the same device layer individually to the driver circuit, and optionally comprising patterning micro-trenches between optical elements in the same device layer through the common bottom electrode to achieve optical isolation between the optical elements in the same device layer without breaking the electrical continuity of the common bottom electrode, and/or optionally comprising patterning metal pads, lines or

Assignees

• Massachusetts Inst Technology

Inventors

• Chen Yijing
• Zhang Li
• Lee Kenneth Eng Kian
• Fitzgerald Eugene A

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/872

  Periodic patterns for optical field-shaping, e.g. photonic bandgap structures · CPC title

• H10H20/0363

  of optical field-shaping means · CPC title

• H10H20/856

  Reflecting means · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title