Display device using micro led

Patent metadata

Field	Value
Publication number	US-12308352-B2
Application number	US-202017779907-A
Country	US
Kind code	B2
Filing date	Feb 10, 2020
Priority date	Nov 25, 2019
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

First claim

The invention claimed is:

1. A display device comprising:
a base part;
a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied;
a dielectric layer disposed to cover the plurality of assembly electrodes;
a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer; and
a passivation layer disposed on the dielectric layer and having a plurality of cells,
wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure,
wherein the passivation layer comprises a concave-convex structure disposed on one surface of the passivation layer facing the dielectric layer, and
wherein the concave-convex structure of the passivation layer and the concave-convex structure of the dielectric layer are matched.

2. The display device according to claim 1 , wherein the concave-convex structures disposed on the plurality of semiconductor light emitting devices and the dielectric layer are arranged to engage each other.

3. The display device according to claim 1 ,
wherein the plurality of semiconductor light emitting devices are disposed inside the plurality of the cells, respectively.

4. The display device according to claim 3 , wherein the concave-convex structure disposed in the dielectric layer is formed only in a region overlapping the plurality of cells.

5. The display device according to claim 3 , wherein the concave-convex structure of the dielectric layer is disposed to overlap at least a portion of the passivation layer.

6. The display device according to claim 5 , wherein the concave-convex structure of the dielectric layer is disposed in the plurality of cells and around the plurality of cells.

7. The display device according to claim 3 , wherein the concave-convex structure disposed in the dielectric layer is disposed in a region overlapping the plurality of cells and in a region overlapping the passivation layer.

8. The display device according to claim 3 , wherein a contact region between the dielectric layer and the passivation layer lack the concave-convex structure.

9. The display device according to claim 1 , wherein the concave-convex structures disposed on the plurality of semiconductor light emitting devices and the dielectric layer are formed at a predetermined interval.

10. The display device according to claim 9 , wherein the plurality of semiconductor light emitting devices comprise a first semiconductor light emitting device comprising the concave-convex structure disposed at a first interval and a second semiconductor light emitting device comprising the concave-convex structure disposed at a second interval.

11. The display device according to claim 10 , wherein the dielectric layer comprises the concave-convex structure disposed at the first interval and the concave-convex structure disposed at the second interval, respectively.

12. The display device according to claim 1 , wherein the concave-convex structure disposed in the plurality of semiconductor light emitting devices is made of any one of Au, Ag, Al, Cu, Mo, Cr, Ti, Ni, W, Ge, or an alloy in which at least some of Au, Ag, Al, Cu, Mo, Cr, Ti, Ni, W, Ge are mixed.

13. The display device according to claim 1 , wherein the concave-convex structure disposed on the dielectric layer is made of a metal oxide or made of the same material as the dielectric layer.

14. The display device according to claim 1 , wherein the concave-convex structure of the dielectric layer comprises different patterns on one surface thereof.

15. The display device according to claim 14 , wherein the concave-convex structure of the dielectric layer comprises a first concave-convex structure disposed at a first interval, a second concave-convex structure disposed at a second interval, and a third concave-convex structure disposed at a third interval.

16. The display device according to claim 1 , wherein a first part of the concave-convex structure of the passivation layer overlaps the plurality of assembly electrodes and second part of the concave-convex structure of the passivation layer does not overlap the plurality of assembly electrodes.

17. A display device comprising:
a base part;
a plurality of assembly electrodes to generate an electric field when power is applied and disposed on the base part;
a dielectric layer to cover the plurality of assembly electrodes; and
a plurality of semiconductor light emitting devices disposed on the dielectric layer,
wherein at least one concave-convex structure is interposed between the plurality of semiconductor light emitting devices and the dielectric layer,
wherein each of the dielectric layer and the plurality of semiconductor light emitting devices includes a concave-convex structure,
wherein the concave-convex structure of the plurality of semiconductor light emitting devices vertically overlap the plurality of assembly electrodes, and
wherein the dielectric layer is disposed between the concave-convex structure of the plurality of semiconductor light emitting devices and the plurality of assembly electrodes, and
further comprising a passivation layer disposed on the dielectric layer,
wherein the passivation layer comprises a concave-convex structure disposed on one surface of the passivation layer facing the dielectric layer, and
wherein the concave-convex structure of the passivation layer and the concave-convex structure of the dielectric layer are matched.

18. The display device according to claim 17 ,
wherein the concave-convex structure of the plurality of semiconductor light emitting devices and the concave-convex structure of the dielectric layer face each other.

19. The display device according to claim 17 , wherein the concave-convex structure of the plurality of semiconductor light emitting devices and the concave-convex structure of the dielectric layer have different intervals.

Assignees

• Lg Electronics Inc

Inventors

• KANG Byungjun
• Kim Junghoon
• Cho Byoungkwon
• Heo Mihee

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/931

  Shapes of bond pads · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10H29/03 Primary

  using mass transfer of LEDs, e.g. by using liquid suspensions · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title