Semiconductor device including interconnection structure including MXene and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12308311-B2
Application number	US-202217707860-A
Country	US
Kind code	B2
Filing date	Mar 29, 2022
Priority date	Oct 18, 2021
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

A semiconductor device includes a first conductive layer including a first metal, a second conductive layer electrically connected to the first conductive layer and including a second metal, and an interconnection structure common to a connection portion of the first and second conductive layers. The interconnection structure may include a seed layer on the first conductive layer that includes graphene, and a metal migration barrier layer on the seed layer that includes MXene.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first conductive layer including a first metal;
a second conductive layer that is electrically connected to the first conductive layer and that includes a second metal; and
an interconnection structure disposed in a connection portion between the first conductive layer and the second conductive layer,
wherein the interconnection structure comprises:
a seed layer disposed on the first conductive layer, the seed layer including graphene; and
a metal migration barrier layer disposed on the seed layer, the metal migration barrier layer including MXene,
wherein the metal migration barrier layer has a polar hydrophilic surface, and
wherein the second conductive layer is disposed on the polar hydrophilic surface of the metal migration barrier layer.

2. The semiconductor device of claim 1 , wherein the metal migration barrier layer is disposed to contact the second conductive layer.

3. The semiconductor device of claim 1 , wherein each of the first metal and the second metal comprises at least one selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), aluminum (Al), and copper (Cu).

4. The semiconductor device of claim 1 , wherein the seed layer is disposed to contact at least a portion of the first conductive layer.

5. The semiconductor device of claim 1 , wherein the graphene is a two-dimensional material having conductivity, and
wherein the seed layer comprises at least one layer of graphene.

6. The semiconductor device of claim 1 , wherein the MXene is a two-dimensional material having conductivity, and
wherein the metal migration barrier layer comprises at least one layer of the MXene.

7. The semiconductor device of claim 1 , wherein the MXene comprises a two-dimensional material having a chemical formula of Mn+1 Xn and
wherein n is 1, 2 or 3, and M comprises at least one selected from the group consisting of scandium (Sc), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and tungsten (W), and X comprises at least one selected from carbon (C) and nitrogen (N).

8. A semiconductor device comprising:
a substrate;
a first conductive layer, including a first metal, on the substrate;
an interlayer insulation layer disposed on the first conductive layer, the interlayer insulation layer including a contact pattern;
a seed layer, including graphene, disposed to contact the first conductive layer in the contact pattern;
a metal migration barrier layer, including MXene, disposed on the seed layer; and
a second conductive layer including a second metal and disposed to contact the metal migration barrier layer,
wherein the metal migration barrier layer has a polar hydrophilic surface,
wherein the second conductive layer is disposed on the polar hydrophilic surface of the metal migration barrier layer.

9. The semiconductor device of claim 8 , wherein each of the first metal and the second metal comprises at least one selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), aluminum (Al), and copper (Cu).

10. The semiconductor device of claim 8 , wherein the graphene is a two-dimensional material having conductivity, and
wherein the seed layer comprises at least one layer of graphene.

11. The semiconductor device of claim 8 , wherein the MXene is a two-dimensional material having conductivity, and
wherein the metal migration barrier layer comprises at least one layer of the MXene.

12. The semiconductor device of claim 8 , wherein the MXene comprises a two-dimensional material having a chemical formula of Mn+1Xn, and
wherein n is 1, 2 or 3, and M comprises at least one selected from the group consisting of scandium (Sc), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and tungsten (W), and X comprises at least one selected from carbon (C) and nitrogen (N).

Assignees

• Sk Hynix Inc

Inventors

• Koo Won Tae
• Han Jae Hyun

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/084

  for dual-damascene structures · CPC title

• H10W20/42 Primary

  Vias, e.g. via plugs · CPC title