Optical Mode Optimization for Wafer Inspection
US-2020089130-A1 · Mar 19, 2020 · US
US12307654B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-12307654-B1 |
| Application number | US-202519031144-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jan 17, 2025 |
| Priority date | Mar 29, 2024 |
| Publication date | May 20, 2025 |
| Grant date | May 20, 2025 |
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The embodiments of the present disclosure provide a method for an image simulation generation based on a near-field simulation of a computational electromagnetic field, the method comprising: constructing a simulated three-dimensional model based on model parameters; constructing a simulated Kohler illumination model based on a light source parameter; using a degree of similarity change in a synthesized image under incremental aperture diaphragm sampling points as a criterion for approximate convergence of the simulation to determine a count of samples to be used for a balancing combination of simulation cost and accuracy; an optical simulation is performed based on the simulated three-dimensional model and the simulated Kohler illumination model, and a far-field electromagnetic field distribution data is obtained to obtain a simulated image by synthesizing the image. In the generation of a large count of simulated images on the basis of pseudo-random defect dataset generation may be further realized, in the acquisition of a large count of datasets, the dataset of defect inspection model may be trained, in order to achieve a direct detection for patterned wafer defective images and solve the problem of difficult access to reference images in a process of patterned wafer defect detection.
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What is claimed is: 1. A method for an image simulation generation based on a near-field simulation of a computational electromagnetic field, wherein the method comprises: constructing, based on model parameters, a simulated three-dimensional model, the model parameters including a model material parameter, a model three-dimensional geometric structure parameter, and a model boundary computation domain; constructing, based on a light source parameter, a simulated Kohler illumination model, the light source parameter including an initial wavelength of a plane wave, a polarization amplitude of the plane wave, an angle of incidence of the plane wave, and an azimuthal angle of an incident plane wave; using a degree of similarity change in a synthesized image under incremental aperture diaphragm sampling points as a criterion for approximate convergence of the simulation to determine a count of samples to be used for a balancing combination of simulation cost and accuracy; performing an optical simulation based on the simulated three-dimensional model and the simulated Kohler illumination model, the optical simulation including simulating by simulation environment constructed by combining the simulated three-dimensional model and the simulated Kohler illumination model and synthesizing an image, by obtaining far-field electromagnetic field distribution data to synthesizing an image to obtain a simulated image; wherein the using the degree of similarity change in the synthesized image under incremental aperture diaphragm sampling points as a criterion for approximate convergence of the simulation to determine a count of samples to be used for balancing the combination of the simulation cost and accuracy includes: giving an initial sampling density n input and judgment thresholds T 1 , T 2 , T* for an image similarity; defining n=n input and increasing a sampling density sequentially according to rule of n=n+1 to obtain a simulated image I n corresponding to each of different sampling densities; assessing an image similarity of the simulated image I n with adjacent simulated images I n−1 , and I n−2 using the Structural Similarity Index Measure (SSIM) as a metric; when SSIM (I n , I n−1 )>T 1 and SSIM (I n , I n−2 )>T 2 are satisfied, determining that the current n is a sampling point when the simulated image has sufficiently converged; defining n 0 *=n; wherein at this time, n 0 * is the sampling point when the simulated image has sufficiently converged, and the corresponding simulated image is I 0 *; redefining n=n input and increasing a sampling density sequentially according to the rule of n=n+1 again to obtain the simulated image I n corresponding to each of different sampling densities; comparing an image similarity between the obtained simulated image I n with the simulated image I 0 * corresponding to the convergent sampling point no; wherein when SSIM (I n , I 0 *)>T*, n≤n 0 *, and n is an odd number are satisfied, the n is a desired optimal sampling value, and defining n best =n to yield the optimal sampling density n best ; calculating the Structural Similarity Index Measure (SSIM) by a following equation: SSIM ( I x , I y ) = ( 2 μ x μ y + C 1 ) ( 2 σ xy + μ x + C 2 ) ( μ x 2 + μ y 2 + C 1 ) ( σ x 2 + σ y 2 + C 2 ) , ( 1 ) wherein I x and I y represent two images at sampling points x and y, respectively, μ x and μ y are averages of all pixels in the two images, σ x and σ y are grayscale standard deviation of the two images, σ xy is a covariance, and C 1 and C 2 are empirical constants; performing an optical simulation based on the simulated three-dimensional model and the simulated Kohler illumination model, by obtaining far-field electromagnetic field distribution data to synthesizing an image to obtain a simulated image includes: obtaining near-field electric fie
Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis · CPC title
Defects, e.g. optical inspection of patterned layer for defects · CPC title
Illumination models · CPC title
Microscopic image · CPC title
Training; Learning · CPC title
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