Thick film resistor paste, thick film resistor, and electronic component

Patent metadata

Field	Value
Publication number	US-12304860-B2
Application number	US-202117921736-A
Country	US
Kind code	B2
Filing date	Apr 30, 2021
Priority date	May 1, 2020
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

The thick film resistor paste for a resistor has no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass. The thick film resistor paste comprises a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder, a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 3 to 60 mass % of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

First claim

The invention claimed is:

1. A thick film resistor paste containing a ruthenium-oxide-containing glass powder, characterized by comprising:
a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder;
a ruthenium-oxide-containing glass powder; and
an organic vehicle,
wherein the thick film resistor paste comprises 11.2 mass % or more and 16.8 mass % or less of the ruthenium oxide contained in the ruthenium oxide-containing glass powder relative to 100 mass % of the thick-film resistor paste composition containing the ruthenium oxide-containing glass powder;

wherein the ruthenium-oxide-containing glass comprises 40 mass % or more and 60 mass % or less of the ruthenium oxide;
wherein a glass composition of the ruthenium-oxide-containing glass comprises 33 mass % or more and 60 mass % or less of silicon oxide, 30 mass % or more and 48 mass % or less of lead oxide, and 5 mass % or more and 50 mass % or less of boron oxide relative to 100 mass % of glass components; and
wherein a combined amount of silicon oxide, lead oxide and boron oxide in the ruthenium-oxide-containing glass by mass % is 81.9 mass % or more and 95 mass % or less relative to 100 mass % of the glass components.

2. The thick film resistor paste according to claim 1 , wherein an average particle diameter of the ruthenium-oxide-containing glass powder is 5 micrometers or less.

3. A thick film resistor comprising a sintered body of the thick film resistor paste according to claim 1 .

4. An electronic component provided with the thick film resistor according to claim 3 .

5. A thick film resistor comprising a sintered body of the thick film resistor paste according to claim 2 .

6. An electronic component provided with the thick film resistor according to claim 5 .

Assignees

• Sumitomo Metal Mining Co

Inventors

• Ando Masaki
• Nagano Takahito

Classifications

• H01B1/22 Primary

  the conductive material comprising metals or alloys · CPC title

• H01C7/003

  Thick film resistors · CPC title

• C03C8/16

  with vehicle or suspending agents, e.g. slip · CPC title

• C03C8/10

  containing lead · CPC title

• C03C8/18 Primary

  containing free metals · CPC title