Porous oxide semiconductor particles

US12304830B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12304830-B2
Application numberUS-202118036728-A
CountryUS
Kind codeB2
Filing dateOct 14, 2021
Priority dateNov 12, 2020
Publication dateMay 20, 2025
Grant dateMay 20, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m 2 /g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm 3 or more and 1.0 g/cm 3 or less. The oxide semiconductor is preferably SnO 2 or SnO 2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

First claim

Opening claim text (preview).

What is claimed is: 1. Porous oxide semiconductor particles comprising a connected structure in which porous primary particles are connected to each other, wherein: a specific surface area of the porous oxide semiconductor particles is 60 m 2 /g or more, an average crystallite diameter of the porous oxide semiconductor particles is 2 nm or more and 8.1 nm or less, and each of the porous primary particles comprises an aggregate of crystallites composed of an oxide semiconductor. 2. The porous oxide semiconductor particles according to claim 1 , wherein a pore diameter of the porous oxide semiconductor particles is 1 nm or more and 20 nm or less. 3. The porous oxide semiconductor particles according to claim 1 , wherein a conductivity of a green compact composed of the porous oxide semiconductor particles is 1×10 −5 S/cm or more. 4. The porous oxide semiconductor particles according to claim 1 , wherein an average particle diameter of primary particles is 0.05 μm or more and 2 μm or less. 5. The porous oxide semiconductor particles according to claim 1 , wherein a pore volume of the porous oxide semiconductor particles is 0.1 mL/g or more. 6. The porous oxide semiconductor particles according to claim 1 , wherein a tap density of the porous oxide semiconductor particles is 0.005 g/cm 3 or more and 1.0 g/cm 3 or less. 7. The porous oxide semiconductor particles according to claim 1 , wherein the oxide semiconductor comprises: (a) SnO 2 or (b) SnO 2 doped with any one or more elements selected from the group consisting of Nb, Sb, W, Ta, and Al. 8. The porous oxide semiconductor particles according to claim 1 , wherein the oxide semiconductor comprises Sb-doped SnO 2 , and a conductivity of a green compact composed of the porous oxide semiconductor particles is 1×10 −3 S/cm or more. 9. The porous oxide semiconductor particles according to claim 1 to be used as a catalyst support of a polymer electrolyte fuel cell.

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What does patent US12304830B2 cover?
Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m 2 /g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor partic…
Who is the assignee on this patent?
Toyota Chuo Kenkyusho Kk, Toyota Motor Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01M8/10. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 20 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).