Membrane gas separation under magnetic field
US-11666855-B2 · Jun 6, 2023 · US
US12298366B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12298366-B2 |
| Application number | US-202118021004-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2021 |
| Priority date | Sep 15, 2020 |
| Publication date | May 13, 2025 |
| Grant date | May 13, 2025 |
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Embodiments include methods (and related systems, devices, and apparatuses) for determining a sorption separation factor for a binary gas mixture by applying a magnetic field to at least a portion of a sorbent ( 604 ) disposed in a chamber of a magnetic susceptibility device; directing a first gas stream including a first gas compound into the chamber at a first pressure and temperature to obtain a first magnetic susceptibility measurement; directing a second gas stream including a second gas compound into the chamber at a second pressure and temperature to obtain a second magnetic susceptibility measurement; directing a binary gas mixture including the first gas compound and the second gas compound into the chamber at a third pressure and temperature to obtain a third magnetic susceptibility measurement; and determining a sorption separation factor based on the first, the second, and the third magnetic susceptibility measurements.
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What is claimed is: 1. A method of determining a sorption separation factor for a binary gas mixture, the method comprising: applying a magnetic field to at least a portion of a sorbent disposed in a chamber of a magnetic susceptibility device; directing a first gas stream including a first gas compound into the chamber at a first pressure and a first temperature to obtain a first magnetic susceptibility measurement; directing a second gas stream including a second gas compound into the chamber at a second pressure and a second temperature to obtain a second magnetic susceptibility measurement; directing a binary gas mixture including the first gas compound and the second gas compound into the chamber at a third pressure and a third temperature to obtain a third magnetic susceptibility measurement; and determining the sorption separation factor based on the first magnetic susceptibility measurement, the second magnetic susceptibility measurement, and the third magnetic susceptibility measurement. 2. The method according to claim 1 , wherein the magnetic field that is applied to the at least a portion of a sorbent includes an inhomogeneous magnetic field. 3. The method according to claim 1 , wherein the sorbent includes at least one of an adsorbent material and an absorbent material and wherein if the sorbent is an adsorbent material then the sorption separation factor is a gas adsorption separation factor and wherein if the sorbent is an absorbent material then the sorption separation factor is a gas absorbent separation factor. 4. The method according to claim 1 , wherein the first magnetic susceptibility measurement is obtained after sorption of the first gas compound by the sorbent has reached equilibrium. 5. The method according to claim 1 , wherein the second magnetic susceptibility measurement is obtained after sorption of the second gas compound by the sorbent has reached equilibrium. 6. The method according to claim 1 , wherein the third magnetic susceptibility measurement is obtained after sorption by the sorbent of the first gas compound and the second gas compound of the binary gas mixture has reached equilibrium. 7. The method according to claim 1 , wherein magnetic susceptibility of the at least a portion of a sorbent is monitored prior to obtaining the first magnetic susceptibility measurement, the second magnetic susceptibility measurement, and the third magnetic susceptibility measurement. 8. The method according to claim 1 , wherein the sorbent adsorbs or absorbs the first gas compound and the second gas compound. 9. The method according to claim 1 , wherein the first temperature, the second temperature, and the third temperature are the same temperature. 10. The method according to claim 1 , wherein the third pressure is the sum of the partial pressures of the first and the second gas compounds in the binary gas mixture and wherein the first pressure is equal to the partial pressure of the first gas component in the binary gas mixture and the second pressure is equal to the partial pressure of the second gas component in the binary gas mixture. 11. The method according to claim 1 , wherein the sorption separation factor is determined by solving equations (1) to (3): x 1 + x 2 = 1 ( 1 ) x 1 · χ 1 + x 2 · χ 2 = χ 1 , 2 ( 2 ) Selectivity = x 1 x 2 y 1 y 2 ( 3 ) where x 1 and x 2 are the molar fractions of the first gas compound and the second gas compound in the sorbed phase, respectively; where y 1 and y 2 are the molar fractions of the first gas compound and the second gas compound in the gas phase, respectively; where χ 1 is the first magnetic susceptibility measurement of the sorbent in equilibrium with the pure first gas compound at the first pressure and the first temperature; where χ 2 is the second magnetic susceptibility measurement of the sorbent in equilibrium with the pure second gas compound at the second pressure and the second temperature; and where χ 1,2 is the third magnetic susceptibility measurement of the sorbent in equilibrium with the binary gas mixture including the first gas compound and the second gas compound at the third pressure and the third temperature. 12. The method according to claim 1 , wherein the sorbent disposed in the chamber is a gas adsorbing sample and wherein the magnetic susceptibility device is configured to allow for gas adsorption to the gas adsorbing sample while controlling gas pressure and temperature inside the chamber and while magnetic susceptibility is measured for the gas adsorbing sample. 13. The method according to claim 1 , wherein the magnetic susceptibility device includes a gravimetric device and the gravimetric device is used to measure magnetic susceptibility. 14. The method according to claim 1 , wherein the magnetic susceptibility device includes a volumetric device and the volumetric device i
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