Thermoelectric module and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12295264-B2
Application number	US-202217741352-A
Country	US
Kind code	B2
Filing date	May 10, 2022
Priority date	Dec 7, 2021
Publication date	May 6, 2025
Grant date	May 6, 2025

Abstract

A thermoelectric module includes a stack structure of a plurality of insulating layers, a plurality of thermoelectric elements formed with the insulating layer interposed therebetween and including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device, a second electrode connected to the second-type semiconductor device, and a connection electrode connecting the first-type and second-type semiconductor devices, and a conductive via penetrating through the insulating layer to connect thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.

First claim

What is claimed is:

1. A thermoelectric module comprising:
a stack structure including an insulating layer and a plurality of thermoelectric elements with the insulating layer interposed therebetween in a stacking direction such that all thermoelectric elements of the stack structure are embedded within the insulating layer, the plurality of thermoelectric elements each including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device and spaced apart from the second-type semiconductor devices of the plurality of thermoelectric elements, a second electrode connected to the second-type semiconductor device and spaced apart from the first-type semiconductor devices of the plurality of thermoelectric elements, and a connection electrode connecting the first-type and second-type semiconductor devices;
first and second external electrodes respectively disposed on first and second surfaces of the stack structure to overlap each other in the stacking direction, and respectively connected to one of the first and second electrodes; and
a conductive via penetrating through the insulating layer to connect a first-type semiconductor device to a second-type semiconductor device of respective thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.

2. The thermoelectric module of claim 1 , wherein
the plurality of thermoelectric elements include a first thermoelectric element and a second thermoelectric element adjacent to each other with the insulating layer interposed therebetween, and
the conductive via connects a first electrode of the first thermoelectric element to a second electrode of the second thermoelectric element, and connects a second electrode of the first thermoelectric element to a first electrode of the second thermoelectric element.

3. The thermoelectric module of claim 1 , wherein
the plurality of thermoelectric elements include a first thermoelectric element and a second thermoelectric element adjacent to each other with the insulating layer interposed therebetween, and
the first-type semiconductor device of the first thermoelectric element overlaps the second-type semiconductor device of the second thermoelectric element in the stacking direction, and
the second-type semiconductor device of the first thermoelectric element overlaps the first-type semiconductor device of the second thermoelectric element in the stacking direction.

4. The thermoelectric module of claim 1 , wherein the first-type semiconductor device is a P-type semiconductor device, and the second-type semiconductor device is an N-type semiconductor device.

5. The thermoelectric module of claim 1 , wherein the conductive via is disposed on the same plane as that of the insulating layer.

6. The thermoelectric module of claim 1 , wherein the insulating layer is a ceramic sintered body.

7. The thermoelectric module of claim 6 , wherein the plurality of thermoelectric elements are simultaneously sintered with the insulating layer.

8. The thermoelectric module of claim 1 , further comprising:
a first connection via penetrating through the insulating layer to connect the first electrode to the first external electrode; and
a second connection via penetrating through the insulating layer to connect the second electrode to the second external electrode.

9. The thermoelectric module of claim 1 , wherein the first and second external electrodes extend to a lower surface of the stack structure which connects first and second surfaces of the stack structure facing each other in the stacking direction.

10. The thermoelectric module of claim 1 , wherein the first electrode, the second electrode, the connection electrode, and the conductive via include any one selected from the group consisting of Ag, Al, Cu, Ni, and alloys thereof.

11. The thermoelectric module of claim 1 , wherein at least one of the plurality of thermoelectric elements includes a plurality of first-type semiconductor devices, a plurality of second-type semiconductor devices, and a plurality of connection electrodes.

12. The thermoelectric module of claim 11 , wherein
the plurality of first-type semiconductor devices and the plurality of second-type semiconductor devices are alternately disposed in one direction, and
the plurality of connection electrodes are alternately disposed at two adjacent ends of the first-type and second-type semiconductor devices.

13. A thermoelectric module comprising:
a ceramic body including first and second thermoelectric elements and an insulating layer interposed therebetween in a stacking direction, wherein:
each of the first and second thermoelectric elements comprises a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device and spaced apart from the second-type semiconductor device of the first and second thermoelectric elements, a second electrode connected to the second-type semiconductor device and spaced apart from the first-type semiconductor device of the first and second thermoelectric elements, and a connection electrode connecting the first-type and second-type semiconductor devices,
the first and second thermoelectric elements are electrically connected to each other in series,
the first-type semiconductor device of the first thermoelectric element overlaps the second-type semiconductor device of the second thermoelectric element in the stacking direction, and
the second-type semiconductor device of the first thermoelectric element overlaps the first-type semiconductor device of the second thermoelectric element in the stacking direction.

14. The thermoelectric module of claim 13 , wherein the ceramic body includes a plurality of first thermoelectric elements and a plurality of second thermoelectric elements alternately connected to each other in the stacking direction, and a plurality of insulating layers each interposed between an adjacent pair of the first and second thermoelectric elements.

15. The thermoelectric module of claim 14 , wherein, among the plurality of first and second thermoelectric elements,
the second electrode of the first thermoelectric element is connected to the first electrode of the second thermoelectric element by a first conductive via penetrating through the insulating layer,
the second electrode of the second thermoelectric element is connected to a first electrode of another first thermoelectric element by a second conductive via penetrating through another insulating layer, and
the first and second conductive vias do not overlap each other in the stacking direction.

16. The thermoelectric module of claim 15 , wherein each of the first and second conductive vias is disposed on the same plane as that of the corresponding insulating layer.

17. The thermoelectric module of claim 15 , wherein:
the first-type and second-type semiconductor devices connect the first and second electrodes to the connection electrode, respectively, in a thickness direction, and the connection electrode connects the first-type and second-type semiconductor devices in a width direction, and
each of the first and second conductive vias does not overlap the first-type and second-type semiconductor devices in any of the stacking direction, thickness, and width directions.

18. The thermoelectric module of claim 13 , wherein the first-type semiconductor device is a P-type semiconductor device, and the second-type semiconductor device is an N-type semiconductor device.

Assignees

• Samsung Electro Mech

Inventors

• Kim Sung Han
• Hwang Se Yeon
• Gi Joon Woo
• Chung jong ho
• Kim Han

Classifications

• H10N10/855

  comprising compounds containing boron, carbon, oxygen or nitrogen · CPC title

• H10N10/01

  Manufacture or treatment · CPC title

• H10N10/81

  Structural details of the junction · CPC title

• H10N10/17 Primary

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• H10N19/101 Primary

  Multiple thermocouples connected in a cascade arrangement · CPC title