Organic light-emitting diode structure and fabrication method thereof, related display panel, and related display device
US-2017294624-A1 · Oct 12, 2017 · US
US12295200B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12295200-B2 |
| Application number | US-202117468146-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 7, 2021 |
| Priority date | Mar 3, 2021 |
| Publication date | May 6, 2025 |
| Grant date | May 6, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A light-emitting device includes: a reflective layer; a first electrode provided on the reflective layer; a second electrode facing the first electrode; a first emission layer provided between the first electrode and the second electrode; a second emission layer provided between the first emission layer and the second electrode, and a first partial transmission mirror provided between the first emission layer and the second emission layer so that a first or higher order resonance mode is formed between the reflective layer and the first partial transmission mirror, and a second or higher order resonance mode is formed between the reflective layer and the second electrode.
Opening claim text (preview).
What is claimed is: 1. A light-emitting device comprising: a reflective layer; a first electrode provided on the reflective layer; a second electrode facing the first electrode; a phase correction layer provided between the first electrode and the second electrode; a first emission layer provided between the first electrode and the second electrode; a second emission layer provided between the first emission layer and the second electrode, and a first partial transmission mirror provided between the first emission layer and the second emission layer so that a first or higher order resonance mode is formed between the reflective layer and the first partial transmission mirror, and a second or higher order resonance mode is formed between the reflective layer and the second electrode, the first partial transmission mirror being in direct contact with a surface of the phase correction layer, wherein the first emission layer and the second emission layer generate light in a wavelength range of same color. 2. The light-emitting device of claim 1 , wherein the first electrode comprises a transparent electrode and the second electrode comprises a partial transmission electrode that reflects a part of light and transmits another part of the light. 3. The light-emitting device of claim 1 , wherein the reflective layer and the second electrode constitute a micro cavity having a resonance wavelength, and wherein the first partial transmission mirror is provided at a node of a light wave resonating within the micro cavity. 4. The light-emitting device of claim 1 , wherein the first partial transmission mirror comprises silver (Ag), aluminum (Al), silver alloy, or aluminum alloy. 5. The light-emitting device of claim 4 , wherein a thickness of the first partial transmission mirror is about 5 nm to about 30 nm. 6. The light-emitting device of claim 5 , wherein a thickness of the second electrode is different from the thickness of the first partial transmission mirror. 7. The light-emitting device of claim 1 , wherein the first emission layer comprises: a first hole transfer layer provided on the first electrode; a first organic emission material layer provided on the first hole transfer layer; and a first electron transfer layer provided on the first organic emission material layer, and wherein the second emission layer comprises: a second hole transfer layer provided on the first partial transmission mirror; a second organic emission material layer provided on the second hole transfer layer; and a second electron transfer layer provided on the second organic emission material layer. 8. The light-emitting device of claim 1 , further comprising a transparent conductor layer on the first partial transmission mirror to face the second electrode. 9. The light-emitting device of claim 1 , further comprising a charge generation layer provided between the first emission layer and the second emission layer. 10. The light-emitting device of claim 1 , further comprising: a third emission layer provided between the second emission layer and the second electrode; and a second partial transmission mirror provided between the second emission layer and the third emission layer. 11. The light-emitting device of claim 10 , wherein the first partial transmission mirror and the second partial transmission mirror are arranged so that a first order resonance mode is formed between the reflective layer and the first partial transmission mirror, a second order resonance mode is formed between the reflective layer and the second partial transmission mirror, and a third order resonance is formed between the reflective layer and the second electrode. 12. The light-emitting device of claim 11 , wherein the reflective layer and the second electrode constitute a micro cavity having a resonance wavelength, wherein the first partial transmission mirror is provided at a first node of a light wave resonating in the micro cavity, and wherein the second partial transmission mirror is provided at a second node of the light wave resonating in the micro cavity. 13. A light-emitting device comprising: a reflective layer; a first electrode on the reflective layer; a second electrode facing the first electrode; a phase correction layer provided between the first electrode and the second electrode; a first emission layer provided between the first electrode and the phase correction layer; a second emission layer provided between the phase correction layer and the second electrode; a first partial transmission mirror provided between the phase correction layer and the first emission layer, the first partial transmission mirror being in direct contact with a lower surface of the phase correction layer; and a second partial transmission mirror provided between the phase correction layer and the second emission layer, the second partial transmission layer being in direct contact with an upper surface of the phase correction layer, wherein the first partial transmission mirror and the second partial transmission mirror are in layers vertically spaced from each other, wherein the first partial transmission mirror and the second partial transmission mirror are arranged such that a first or higher order resonance mode is formed between the reflective layer and the first partial transmission mirror, and a second or higher order resonance mode is formed between the reflective layer and the second electrode, wherein the first emission layer and the second emission layer generate light in a wavelength range of same color. 14. The light-emitting device of claim 13 , wherein the first electrode comprises a transparent electrode and the second electrode comprises a partial transmission electrode that reflects a part of light and transmits another part of the light. 15. The light-emitting device of claim 13 , wherein the reflective layer and the second electrode constitute a micro cavity having a resonance wavelength, and wherein the phase correction layer is located at a node of a light wave resonating within the micro cavity. 16. The light-emitting device of claim 13 , wherein the reflective layer, the second electrode, the first partial transmission mirror, and the second partial transmission mirror cause a phase modulation greater than 180 degrees to occur with respect to light reflected by the reflective layer, the second electrode, the first partial transmission mirror, and the second partial transmission mirror. 17. The light-emitting device of claim 13 , wherein the phase correction layer comprises a transparent conductive material. 18. The light-emitting device of claim 17 , wherein a thickness of the phase correction layer is about 5 nm to about 150 nm. 19. The light-emitting device of claim 13 , wherein each of the first partial transmission mirror and the second partial transmission mirror comprises silver (Ag), aluminum (Al), silver alloy, or aluminum alloy. 20. The light-emitting device of claim 19 , wherein each of the first partial transmission mirror and the second partial transmission mirror has a thickness of about 5 nm to about 30 nm. 21. The light-emitting device of claim 13 , wherein an optical distance between the reflective layer and the first partial transmission mirror is set so that a first or second order resonance mode is formed between the reflective layer and the first partial transmission mirror, and wherein an optical distance between the second partial transmission mirror and the second elec
comprising reflective means · CPC title
comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title
Thickness · CPC title
comprising reflective means · CPC title
comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.