Solid-state image sensing device and electronic device

Patent metadata

Field	Value
Publication number	US-12294010-B2
Application number	US-202318194739-A
Country	US
Kind code	B2
Filing date	Apr 3, 2023
Priority date	Feb 27, 2015
Publication date	May 6, 2025
Grant date	May 6, 2025

Abstract

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

First claim

What is claimed is:

1. A solid-state image sensing device, comprising:
a photoelectric conversion unit;
a charge holding unit configured to hold charges transferred from the photoelectric conversion unit;
a first transfer transistor configured to transfer the charges from the photoelectric conversion unit to the charge holding unit;
a second transfer transistor configured to control potential of the charge holding unit;
a third transfer transistor configured to transfer the charges held in the charge holding unit to a floating diffusion; and
a discharging transistor configured to reset the photoelectric conversion unit, wherein
in a top view, a gate electrode of the first transfer transistor and a gate electrode of the discharging transistor are arranged in line in a first direction, and
in the top view, at least two of the gate electrode of the first transfer transistor, a gate electrode of the second transfer transistor, and a gate electrode of the third transfer transistor are arranged in line in a second direction different from the first direction.

2. The solid-state image sensing device according to claim 1 , wherein
the discharging transistor is arranged between two adjacent pixels and shared by the two adjacent pixels.

3. The solid-state image sensing device according to claim 1 , further comprising
a resetting transistor configured to reset each region of the charge holding unit to the floating diffusion, wherein a gate electrode of the resetting transistor and the gate electrode of the first transfer transistor are arranged in line in the second direction.

4. The solid-state image sensing device according to claim 1 ,
wherein the first direction is vertical to the second direction.

5. The solid-state image sensing device according to claim 1 ,
wherein a first light blocking part is between the photoelectric conversion unit of adjacent pixels.

6. The solid-state image sensing device according to claim 1 , further comprising:
a second light blocking part between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, wherein
the second light blocking part covers the second surface, and
the second light blocking part is with a first opening; and

a third light blocking part that surrounds a side surface of the photoelectric conversion unit.

7. The solid-state image sensing device according to claim 6 ,
wherein a part of the gate electrode of the first transfer transistor is inserted into the first opening.

8. The solid-state image sensing device according to claim 6 ,
wherein the first opening is arranged at an end of a pixel near the third light blocking part.

9. The solid-state image sensing device according to claim 6 ,
wherein the gate electrode of the second transfer transistor, the gate electrode of the third transfer transistor, and the gate electrode of the discharging transistor are above the second light blocking part.

10. The solid-state image sensing device according to claim 6 ,
wherein the gate electrode of the first transfer transistor is above the first opening.

11. The solid-state image sensing device according to claim 1 , wherein
the photoelectric conversion unit is on a first semiconductor substrate,
the charge holding unit is on a second semiconductor substrate,
the first transfer transistor is over the first semiconductor substrate and the second semiconductor substrate, and
a joining interface between the first semiconductor substrate and the second semiconductor substrate is in a channel of the first transfer transistor.

12. The solid-state image sensing device according to claim 11 ,
wherein the joining interface is closer to a drain end of the first transfer transistor than to a source end.

13. The solid-state image sensing device according to claim 11 ,
wherein the gate electrode of the first transfer transistor is configured of a horizontal electrode part that is at a device forming surface of the second semiconductor substrate and a vertical electrode part extending vertically downward from the horizontal electrode part to the photoelectric conversion unit.

14. The solid-state image sensing device according to claim 1 , further comprising:
an amplification transistor is configured to read out the charges in the floating diffusion; and
a select transistor configured to select a pixel, so that a signal of the pixel output by the amplification transistor is readout to a vertical signal line.

15. An electronic device comprising the solid-state image sensing device according to claim 1 .

Assignees

• Sony Group Corp

Inventors

• Tayanaka Hiroshi
• Akiyama Kentaro
• Sakano Yorito
• Oinoue Takashi
• Hagimoto Yoshiya
• Matsumura Yusuke
• Sato Naoyuki
• Miyanami Yuki
• Ueda Yoichi
• Matsumoto Ryosuke

Classifications

• H04N25/589

  with different integration times, e.g. short and long exposures · CPC title

• H04N25/75

  Circuitry for providing, modifying or processing image signals from the pixel array · CPC title

• H04N25/68

  applied to defects · CPC title

• H04N25/78

  Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

• H10D89/60

  Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] · CPC title