Film removing method, substrate treating method, and substrate treating apparatus

Patent metadata

Field	Value
Publication number	US-12290876-B2
Application number	US-202318341838-A
Country	US
Kind code	B2
Filing date	Jun 27, 2023
Priority date	Apr 30, 2019
Publication date	May 6, 2025
Grant date	May 6, 2025

Abstract

Disclosed is a method for removing a film from a substrate by irradiating a plurality of unit pulse laser beams to an edge region of the substrate. The method includes a first irradiation operation for irradiating a plurality of unit pulse laser beams onto the substrate while the substrate is rotating, and a second irradiation operation for irradiating a plurality of unit pulse laser beams to regions of the substrate onto which the unit pulse laser beams are not irradiated in the first irradiation operation.

First claim

What is claimed is:

1. A method for removing a film from a substrate by irradiating a plurality of unit pulse laser beams to an edge region of the substrate, the method comprising:
a first irradiation operation for irradiating the plurality of unit pulse laser beams onto first regions the substrate while the substrate is rotating; and
a second irradiation operation for irradiating the plurality of unit pulse laser beams to second regions of the substrate onto which the unit pulse laser beams are not irradiated in the first irradiation operation,
wherein the first irradiation operation irradiates the first regions with the unit pulse laser beams at one or more first operation radial distances along a circumference of the substrate such that each of the first regions do not overlap.

2. The method of claim 1 , wherein the first irradiation operation and the second irradiation operation are sequentially performed, and
wherein the second irradiation operation is performed when a preset time has elapsed after the first irradiation operation is completed.

3. The method of claim 1 , wherein each of the unit pulse laser beams has a wavelength below an ablation threshold at which ablation occurs in the film.

4. The method of claim 3 , wherein each of the unit pulse laser beams has a wavelength of 150 nm to 1200 nm.

5. The method of claim 1 , wherein each of the unit pulse laser beams irradiated to the substrate in the first irradiation operation and/or the second irradiation operation has a cross-sectional circular shape.

6. The method of claim 1 , wherein each of the unit pulse laser beams irradiated to the substrate in the first irradiation operation and/or the second irradiation operation has a cross-sectional quadrangular shape.

7. The method of claim 1 , wherein the first irradiation operation includes:
irradiating the unit pulse laser beams while an irradiation position of the unit pulse laser beams is displaced along a circumferential direction of the substrate while the substrate rotates; and
irradiating the unit pulse laser beams while an irradiation position of the unit pulse laser beams is displaced along a radial direction of the substrate.

8. The method of claim 1 , wherein the second irradiation operation includes:
irradiating the unit pulse laser beams while an irradiation position of the unit pulse laser beams is displaced along a circumferential direction of the substrate while the substrate rotates; and
irradiating the unit pulse laser beams while an irradiation position of the unit pulse laser beams is displaced along a radial direction of the substrate.

9. The method of claim 1 , wherein the second irradiation operation irradiates the second regions with the unit pulse laser beams at a second operation radial distance along the circumference of the substrate.

10. The method of claim 9 , wherein each of the second regions do not overlap each other.

11. The method of claim 10 , wherein each of the second regions overlap more than one first region.

12. The method of claim 11 , wherein the first operation radial distances of the first irradiation operation include a first radial distance and a second radial distance, the first and the second radial distances are different from each other.

13. The method of claim 12 , wherein the second operation radial distance is between the first radial distance and the second radial distance of the first irradiation operation.

14. The method of claim 2 , wherein the preset time is based on a measured temperature of the film subjected to the first irradiation operation.

15. The method of claim 1 , wherein the unit pulse laser beams of the first and second irradiation operation irradiates on a top surface of the film on the substrate.

Assignees

• Semes Co Ltd

Inventors

• Park Soo Young
• Kwon Ohyeol
• Ahn Jun Keon
• Lee Jung Hwan
• Lee Seong Soo

Classifications

• H10P95/11

  Separation of active layers from substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0418

  for etching · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P14/6542

  by using coherent radiation, e.g. using a laser · CPC title