Phase shifter and antenna

Patent metadata

Field	Value
Publication number	US-12288918-B2
Application number	US-202218018958-A
Country	US
Kind code	B2
Filing date	Jan 27, 2022
Priority date	Jan 27, 2022
Publication date	Apr 29, 2025
Grant date	Apr 29, 2025

Abstract

There is provided a phase shifter having a phase shift region and a peripheral region, and including a first substrate, a second substrate and a dielectric layer between such two substrates; the first substrate includes a first dielectric substrate, a first electrode and a first auxiliary structure; the second substrate includes a second dielectric substrate, a second electrode and a second auxiliary structure; the phase shift region includes overlapping regions; the first electrode and the second electrode are located in the phase shift region, and have orthographic projections, on the first dielectric substrate, overlapped at least partially in the overlapping regions; the first auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the first dielectric substrate; the second auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the second dielectric substrate.

First claim

The invention claimed is:

1. A phase shifter, comprising a first substrate and a second substrate disposed opposite to each other, and a dielectric layer disposed between the first substrate and the second substrate; the first substrate comprises a first dielectric substrate and a first electrode arranged on a side of the first dielectric substrate close to the dielectric layer; the second substrate comprises a second dielectric substrate and a second electrode arranged on a side of the second dielectric substrate close to the dielectric layer;
the phase shifter has a phase shift region and a peripheral region; the phase shift region comprises at least one group of overlapping regions, and each group comprises a plurality of overlapping regions arranged at intervals along a transmission direction in which a microwave signal is transmitted; the first electrode and the second electrode are both located in the phase shift region, and orthographic projections of the first electrode and the second electrode on the first dielectric substrate are overlapped at least partially in the overlapping regions to form a plurality of capacitors;
the phase shifter further comprises a first auxiliary structure and a second auxiliary structure; the first auxiliary structure is located in the peripheral region and arranged on a side, close to the dielectric layer, of the first dielectric substrate; the second auxiliary structure is located in the peripheral region and arranged on a side, close to the dielectric layer, of the second dielectric substrate.

2. The phase shifter of claim 1 , wherein the first auxiliary structure comprises a plurality of first auxiliary sub-electrodes, and the first auxiliary sub-electrodes and the first electrode are arranged in a same layer and made of a same material; and/or
the second auxiliary structure comprises a plurality of second auxiliary sub-electrodes, and the second auxiliary sub-electrodes and the second electrode are arranged in a same layer and made of a same material.

3. The phase shifter of claim 2 , wherein an area of the phase shift region is equal to S 11 ; an area of the peripheral region is equal to S 12 ; in response to that the first auxiliary structure comprises a plurality of first auxiliary sub-electrodes, an area of an orthographic projection of the first electrode on the first dielectric substrate is equal to S 13 ; an area of an orthographic projection of each first auxiliary sub-electrode on the first dielectric substrate is equal to S 14 , S 13 :S 11 =S 14 :S 12 ; and/or
in response to that the second auxiliary structure comprises a plurality of second auxiliary sub-electrodes, an area of an orthographic projection of the second electrode on the second dielectric substrate is equal to S 15 ; an area of an orthographic projection of each second auxiliary sub-electrode on the second dielectric substrate is equal to S 16 , S 15 :S 11 =S 16 :S 12 .

4. The phase shifter of claim 2 , wherein in response to that the first auxiliary structure comprises a plurality of first auxiliary sub-electrodes, a thickness of each first auxiliary sub-electrode is equal to that of the first electrode;
in response to that the second auxiliary structure comprises a plurality of second auxiliary sub-electrodes, a thickness of each second auxiliary sub-electrode is equal to that of the second electrode.

5. The phase shifter of claim 2 , wherein in response to that the first auxiliary structure comprises a plurality of first auxiliary sub-electrodes and the second auxiliary structure comprises a plurality of second auxiliary sub-electrodes, an orthographic projection of each first auxiliary sub-electrode on the first dielectric substrate is overlapped with an orthographic projection of one second auxiliary sub-electrode on the first dielectric substrate.

6. The phase shifter of claim 4 , wherein a center of an orthographic projection of each first auxiliary sub-electrode on the first dielectric substrate is coincident with a center of an orthographic projection of one second auxiliary sub-electrode on the first dielectric substrate.

7. The phase shifter of claim 2 , further comprising:
a plurality of spacers arranged at intervals between the first substrate and the second substrate;
each spacer comprises a first end face and a second end face arranged opposite to each other, and the first end face is closer to the first substrate than the second end face; in response to that the first auxiliary structure comprises a plurality of first auxiliary sub-electrodes and the second auxiliary structure comprises a plurality of second auxiliary sub-electrodes, for each spacer, an orthographic projection of the first end face on the first dielectric substrate is located in an orthographic projection of one first auxiliary sub-electrode on the first dielectric substrate, and an orthographic projection of the second end face on the second dielectric substrate is located in an orthographic projection of one second auxiliary sub-electrode on the second dielectric substrate.

8. The phase shifter of claim 2 , further comprising:
a first protective layer and a second protective layer, the first protective layer is located on a side, away from the first dielectric substrate, of a layer where the first electrode and the first auxiliary structure are located, and the second protective layer is located on a side, away from the second dielectric substrate, of a layer where the second electrode and the second auxiliary structure are located.

9. The phase shifter of claim 1 , wherein a material of the first auxiliary structure and the second auxiliary structure comprises organic resin.

10. The phase shifter of claim 9 , wherein a thickness of the first auxiliary structure is not less than that of the first electrode, and/or a thickness of the second auxiliary structure is not less than that of the second electrode.

11. The phase shifter of claim 9 , further comprising:
a first negative stress film layer covering the first electrode and a second negative stress film layer covering the second electrode; in the peripheral region, the first auxiliary structure is located on a side, away from the first dielectric substrate, of the first negative stress film layer;
the second auxiliary structure is located on a side, away from the second dielectric substrate, of the second negative stress film layer.

12. The phase shifter of claim 1 , further comprising:
a first mark pattern and a first buffer layer sequentially arranged along a direction away from the first dielectric substrate, and a second mark pattern and a second buffer layer sequentially arranged along a direction away from the second dielectric substrate; the first buffer layer is located between the first mark pattern and the first electrode, and the second buffer layer is located between the second mark pattern and the second electrode;
an orthographic projection of the first mark pattern on the first dielectric substrate is overlapped with an orthographic projection of the first electrode on the first dielectric substrate; an orthographic projection of the second mark pattern on the first dielectric substrate is overlapped with an orthographic projection of the second electrode on the first dielectric substrate.

13. The phase shifter of claim 1 , wherein the first electrode comprises a first transmission line and a second transmission line arranged side by side and each extending along the transmission direction in which the microwave signal is transmitted; the second electrode comprises a plurality of patch structures arranged side by side along the transmission direction in which the microwave signal is transm

Assignees

• Beijing Boe Sensor Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Wang Xiaobo
• Jia Haocheng
• Che Chuncheng
• Zhang Zhifeng
• Tang Cuiwei
• Liu Yong
• Liang Honggang
• Chen Sheng
• Su Xueyan
• Lian Hailong
• Ding Yi
• Xie Jing
• Zhang Wei
• Zhou Weisi
• Wei Meng
• Wang Jing
• Zhang Zhenguo
• Qu Feng

Classifications

• H01P1/184

  Strip line phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence) · CPC title

• H01Q3/36

  with variable phase-shifters · CPC title

• H01Q21/06

  Arrays of individually energised antenna units similarly polarised and spaced apart · CPC title

• H01P1/18

  Phase-shifters (H01P1/165 takes precedence) · CPC title

• H01P1/182 Primary

  Waveguide phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence) · CPC title