Solid oxide cell stack with a pressure difference between anode and cathode compartments

Patent metadata

Field	Value
Publication number	US-12288913-B2
Application number	US-202017640001-A
Country	US
Kind code	B2
Filing date	Oct 7, 2020
Priority date	Oct 28, 2019
Publication date	Apr 29, 2025
Grant date	Apr 29, 2025

Abstract

A SOC stack has interconnects with a maximum distance between the contact points which are designed to compensate for pressure difference between one side of the interconnect to the other side.

First claim

What is claimed is:

1. Solid Oxide Cell stack, comprising
a plurality of stacked cell units, each unit comprises a solid oxide cell in a cell layer and an interconnect in an interconnect layer,
wherein one interconnect layer separates one cell layer from the adjacent cell layer in the cell stack, each interconnect comprises one or more protruding contact areas on a first side and one or more second protruding contact areas on a second side of the interconnect adapted to provide mechanical and electrical contact between the solid oxide cells,
wherein each solid oxide cell has a high-pressure side facing the first side of an adjacent interconnect and a low-pressure side facing a second side of an adjacent interconnect and
wherein a maximum distance between two adjacent edges of the contact areas on the first side of the interconnects is larger than the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects, and
wherein the maximum distance between the two adjacent edges of the contact areas on the second side of the interconnects does not exceed 2.5 mm.

2. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 2.0 mm.

3. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 1.8 mm.

4. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 1.5 mm.

5. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 1.2 mm.

6. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 1.0 mm.

7. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.9 mm.

8. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.8 mm.

9. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.7 mm.

10. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.6 mm.

11. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.5 mm.

12. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.4 mm.

13. Solid Oxide Cell stack according to claim 1 , wherein the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects is 0.3 mm.

14. Solid Oxide Cell stack according to claim 1 , wherein an area of each of the interconnects is between 15 cm 2 and 10000 cm 2 .

15. Solid Oxide Cell stack according to claim 1 , wherein the solid oxide cells are ceramic cells.

16. Solid Oxide Cell stack according to claim 1 , wherein the interconnects comprise one or more intermediate contact enhancing layers.

17. Solid Oxide Cell stack according to claim 1 , wherein the Solid Oxide Cell stack is a Solid Oxide Electrolysis cell stack.

18. Solid Oxide Cell stack according to claim 1 , wherein the pressure difference between the high-pressure side and the low-pressure side is minimum 300 mBar.

19. Solid Oxide Cell stack according to claim 1 , wherein the pressure difference between the high-pressure side and the low-pressure side is minimum 1 Bar.

20. Solid Oxide Cell stack according to claim 1 , wherein at least one of the first protruding contact areas aligns with at least one of the second protruding contact areas.

Assignees

• Haldor Topsoe As
• Topsoe As

Inventors

• Küngas Rainer
• Heiredal-Clausen Thomas
• Blennow Bengt Peter Gustav
• Nørby Tobias Holt
• Rass-Hansen Jeppe

Classifications

• H01M8/026

  characterised by grooves, e.g. their pitch or depth · CPC title

• H01M8/0254 Primary

  corrugated or undulated · CPC title

• H01M8/0247 Primary

  characterised by the form (characterised by a channel configuration H01M8/0258) · CPC title

• H01M2300/0071

  Oxides · CPC title

• H01M2008/1293

  Fuel cells with solid oxide electrolytes · CPC title