Thermoelectric conversion element, thermoelectric conversion module, and method of producing thermoelectric conversion element

Patent metadata

Field	Value
Publication number	US-12284918-B2
Application number	US-202218574080-A
Country	US
Kind code	B2
Filing date	Feb 25, 2022
Priority date	Jun 30, 2021
Publication date	Apr 22, 2025
Grant date	Apr 22, 2025

Abstract

A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 mΩcm 2 and not more than 0.5 mΩcm 2 .

First claim

The invention claimed is:

1. A thermoelectric conversion element comprising:
a first electrode;
a thermoelectric conversion material portion composed of SiGe including an amorphous phase and a crystal phase and configured to convert heat into electricity;
an intermediate layer arranged on the thermoelectric conversion material portion;
a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer; and
a second electrode arranged apart from the first electrode and connected to the thermoelectric conversion material portion,
wherein the intermediate layer includes
a first layer arranged in contact with the thermoelectric conversion material portion, the first layer containing a dopant, and
a second layer arranged on the first layer and in contact with the bonding material, and configured to suppress diffusion of elements,

the intermediate layer having an interface resistivity of not less than 0.0001 mΩcm 2 and not more than 0.5 mΩcm 2 .

2. The thermoelectric conversion element according to claim 1 , wherein the dopant includes at least one of P, Fe, Au, B, Ni, V, Ti, Sb, As, Ga, Mo, Y, Cu, and Zr.

3. The thermoelectric conversion element according to claim 1 , wherein the dopant has a concentration of not less than 3 at % and not more than 20 at %.

4. The thermoelectric conversion element according to claim 1 , wherein the second layer is composed of at least one of iron silicide, nickel silicide, and titanium boride.

5. The thermoelectric conversion element according to claim 1 , wherein the first layer has a thickness of not less than 10 nm and not more than 1 mm.

6. A thermoelectric conversion module comprising a plurality of thermoelectric conversion elements, each thermoelectric conversion element according to claim 1 .

7. A method of producing a thermoelectric conversion element, comprising the steps of:
obtaining a first mixture by mixing Si powder, Ge powder, and powder constituting a dopant of SiGe as a semiconductor material;
obtaining a second mixture by mixing Si powder and raw material powder constituting a layer configured to suppress diffusion of elements;
obtaining a sintered material by arranging the first mixture on the second mixture and performing spark plasma sintering while maintaining the first mixture and the second mixture at a temperature of not lower than 400° C. and applying a pressure of not less than 20 MPa and not more than 1 GPa; and
bonding electrodes to the sintered material.

8. The thermoelectric conversion element according to claim 2 , wherein the dopant has a concentration of not less than 3 at % and not more than 20 at %.

9. The thermoelectric conversion element according to claim 2 , wherein the second layer is composed of at least one of iron silicide, nickel silicide, and titanium boride.

10. The thermoelectric conversion element according to claim 3 , wherein the second layer is composed of at least one of iron silicide, nickel silicide, and titanium boride.

11. The thermoelectric conversion element according to claim 2 , wherein the first layer has a thickness of not less than 10 nm and not more than 1 mm.

12. The thermoelectric conversion element according to claim 3 , wherein the first layer has a thickness of not less than 10 nm and not more than 1 mm.

13. The thermoelectric conversion element according to claim 4 , wherein the first layer has a thickness of not less than 10 nm and not more than 1 mm.

14. A thermoelectric conversion module comprising a plurality of thermoelectric conversion elements, each thermoelectric conversion element according to claim 2 .

15. A thermoelectric conversion module comprising a plurality of thermoelectric conversion elements, each thermoelectric conversion element according to claim 3 .

16. A thermoelectric conversion module comprising a plurality of thermoelectric conversion elements, each thermoelectric conversion element according to claim 4 .

17. A thermoelectric conversion module comprising a plurality of thermoelectric conversion elements, each thermoelectric conversion element according to claim 5 .

Assignees

• Sumitomo Electric Industries
• Toyota School Found

Inventors

• Hirose Kotaro
• Adachi Masahiro
• Takeuchi Tsunehiro

Classifications

• H10N10/82

  Interconnections · CPC title

• H10N10/01

  Manufacture or treatment · CPC title

• H10N10/8556 Primary

  comprising compounds containing germanium or silicon · CPC title

• H10N10/855

  comprising compounds containing boron, carbon, oxygen or nitrogen · CPC title

• H10N10/817 Primary

  the junction being non-separable, e.g. being cemented, sintered or soldered · CPC title