Semiconductor light emitting device having reflective electrode on multilayer insulating structure

Patent metadata

Field	Value
Publication number	US-12284845-B2
Application number	US-202217711165-A
Country	US
Kind code	B2
Filing date	Apr 1, 2022
Priority date	Aug 11, 2021
Publication date	Apr 22, 2025
Grant date	Apr 22, 2025

Abstract

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a substrate;
a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate;
a transparent electrode layer on the second conductivity-type semiconductor layer;
a first insulating layer on the transparent electrode layer and having a plurality of first through-holes;
a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively;
a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and
a second insulating layer between the multilayer insulating structure and the reflective electrode layer, wherein the reflective electrode layer is disposed above the second insulating layer.

2. The semiconductor light emitting device as claimed in claim 1 , wherein the multilayer insulating structure has a distributed Bragg reflector structure in which insulating films having different refractive indices are alternately stacked.

3. The semiconductor light emitting device as claimed in claim 2 , wherein:
the reflective electrode layer includes Ag, and
the multilayer insulating structure includes TiO2.

4. The semiconductor light emitting device as claimed in claim 3 , wherein the second insulating layer includes SiO2 or SiN.

5. The semiconductor light emitting device as claimed in claim 1 , further comprising a third insulating layer covering upper and side surfaces of the reflective electrode layer.

6. The semiconductor light emitting device as claimed in claim 5 , wherein the first insulating layer and the third insulating layer are in direct contact with each other at an edge of the light emitting structure.

7. The semiconductor light emitting device as claimed in claim 5 , further comprising:
a first connection electrode in contact with the first conductivity-type semiconductor layer and passing through the first insulating layer, the second insulating layer, and the third insulating layer; and
a second connection electrode in contact with the reflective electrode layer and passing through the third insulating layer.

8. The semiconductor light emitting device as claimed in claim 7 , further comprising:
a first electrode pad connected to the first connection electrode;
a second electrode pad connected to the second connection electrode;
a first solder pillar connected to the first electrode pad;
a second solder pillar connected to the second electrode pad; and
a molding portion covering side surfaces of the first solder pillar and the second solder pillar.

9. The semiconductor light emitting device as claimed in claim 1 , wherein the second insulating layer extends between the reflective electrode layer and the first insulating layer.

10. The semiconductor light emitting device as claimed in claim 1 , wherein the multilayer insulating structure is not exposed at an external surface of the semiconductor light emitting device.

11. The semiconductor light emitting device as claimed in claim 1 , wherein the second insulating layer covers an outermost side surface of the multilayer insulating structure, wherein the outermost side surface comprises a side surface of the multilayer insulating structure horizontally closest to an exterior of the semiconductor light emitting device.

12. A semiconductor light emitting device, comprising:
a light emitting structure having a stack structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer and including a recess region in which the second conductivity-type semiconductor layer, the active layer, and a portion of the first conductivity-type semiconductor layer have been removed and a mesa region adjacent to the recess region;
a transparent electrode layer on the second conductivity-type semiconductor layer;
a first insulating layer on the transparent electrode layer and having a plurality of first through-holes overlapping the mesa region;
a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively;
a second insulating layer covering upper and side surfaces of the multilayer insulating structure; and
a reflective electrode layer on the second insulating layer and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes, wherein the reflective electrode layer is disposed above the second insulating layer.

13. The semiconductor light emitting device as claimed in claim 12 , wherein the multilayer insulating structure has a distributed Bragg reflector structure in which a first insulating film having a first refractive index and a second insulating film having a second refractive index are alternately stacked.

14. The semiconductor light emitting device as claimed in claim 13 , wherein:
the first insulating film includes SiO2, and
the second insulating film includes TiO2.

15. The semiconductor light emitting device as claimed in claim 13 , wherein:
the multilayer insulating structure has a first surface in contact with the first insulating layer and a second surface opposite to the first surface,
the first insulating film is on the first surface of the multilayer insulating structure, and
the second insulating film is on the second surface of the multilayer insulating structure.

16. The semiconductor light emitting device as claimed in claim 12 , further comprising a third insulating layer covering upper and side surfaces of the reflective electrode layer.

17. The semiconductor light emitting device as claimed in claim 16 , wherein the first insulating layer and the third insulating layer are in direct contact with each other in a region overlapping the recess region of the light emitting structure.

18. A semiconductor light emitting device, comprising:
a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer that are sequentially stacked;
a transparent electrode layer on the second conductivity-type semiconductor layer;
a first insulating layer on the transparent electrode layer and having a first through-hole;
a multilayer insulating structure on the first insulating layer and having a second through-hole overlapping the first through-hole;
a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the first through-hole and the second through-hole;
a second insulating layer between the multilayer insulating structure and the reflective electrode layer; and
a third insulating layer covering upper and side surfaces of the reflective electrode layer,
wherein the first insulating layer and the third insulating layer are in direct contact with each other at an edge of the light emitting structure.

19. The semiconductor light emitting device as claimed in claim 18 , wherein the multilayer insulating structure has a distributed Bragg reflector structure in which a first insulating film including SiO2 and a second insulating film including TiO2 are alternately stacked.

20. The semiconduc

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Minkyun
• Joo Donghyuk
• Kim Inho
• Son Seungmi
• Lee Sungwook

Classifications

• H10H20/034

  of coatings · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/833

  Transparent materials · CPC title