Capacitor, electronic device including the same, and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12278261-B2
Application number	US-202117564699-A
Country	US
Kind code	B2
Filing date	Dec 29, 2021
Priority date	Jul 23, 2021
Publication date	Apr 15, 2025
Grant date	Apr 15, 2025

Abstract

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

First claim

What is claimed is:

1. A capacitor comprising:
a first thin-film electrode layer;
a second thin-film electrode layer;
a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and
an interlayer between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a crystal with a structure of a same type as and a different composition from a crystal structure of at least one of the first thin-film electrode layer, the second thin-film electrode layer, or the dielectric layer,
wherein the interlayer comprises at least one of a first anionized layer, a second anionized layer, or a first neutral layer,
the first anionized layer including at least one of a monovalent cation, divalent cation, or trivalent cation of an atomic weight of 20 or more,
the second anionized layer including a monovalent cation, and
the first neutral layer including a plurality of trivalent cations, and
wherein a thickness of the interlayer is less than a thickness of the dielectric layer.

2. The capacitor of claim 1 , wherein the first anionized layer includes a composition represented by [B1O 2 ] −a , wherein B1 represents the least one monovalent cation, divalent cation, or trivalent cation, and
a is 1, 2, or 3.

3. The capacitor of claim 2 , wherein B1 is at least one of Li, Na, K, Rb, Cs, Mg, Be, Ba, Ca, Ga, or In.

4. The capacitor of claim 1 , wherein the first anionized layer includes a composition represented by at least one of [GaO 2 ] − , [InO 2 ] − , [BeO 2 ] −2 , [MgO 2 ] −2 , [BaO 2 ] −2 , [CaO 2 ] −2 , [LiO 2 ] −3 , [NaO 2 ] −3 , [KO 2 ] −3 , or [RbO 2 ] −3 .

5. The capacitor of claim 1 , wherein the interlayer comprises the first anionized layer, and further comprises:
a second neutral layer including a composition represented by [A1O], wherein A1 is a divalent cation.

6. The capacitor of claim 5 , wherein A1 is at least one of Sr, Ca, Ba, Mg, or Be.

7. The capacitor of claim 5 , wherein the composition of the second neutral layer is represented by at least one of [SrO], [CaO], [BaO], [MgO], or [BeO].

8. The capacitor of claim 1 , wherein
the interlayer comprises the first anionized layer and a second neutral layer,
the first anionized layer and the second neutral layer are alternately stacked, and
the first anionized layer and the second neutral layer comprise different metals from each other.

9. The capacitor of claim 1 , wherein the interlayer includes a metal oxide having a perovskite-type crystal structure and is represented by Formula 1:
[A1B1O x ]  <Formula 1>

wherein, A1 is a divalent cation, B1 is the at least one monovalent cation, divalent cation, or trivalent cation, and 2.5<x≤3.0.

10. The capacitor of claim 1 , wherein
the interlayer includes a metal oxide represented by at least one of
[SrGaO x ], [CaGaO x ], [BaGaO x ], [PbGaO x ], [SrInO x ], [CaInO x ], [BaInO x ], [PbInO x ], [SrBeO x ], [CaBeO x ], [BaBeO x ], [PbBeO x ], [SrMgO x ], [CaMgO x ], [BaMgO x ], [PbMgO x ], [SrBaO x ], [CaBaO x ], [PBBaO x ], [SrCaO x ], [BaCaO x ], [PbCaO x ], [SrLiO x ], [CaLiO x ], [BaLiO x ], [PbLiO x ], [SrNaO x ], [CaNaO x ], [BaNaO x ], [PbNa x ], [SrKO x ], [CaKO x ], [BaKO x ], [PbKO x ], [SrRbO x ], [CaRbO x ], [BaRbO x ], or [PbRbO x ], and
wherein 2.5<x≤3.0.

11. The capacitor of claim 1 , wherein the interlayer includes the second anionized layer, and the second anionized layer includes a composition represented by [A 20 ]-, wherein A 2 is the monovalent cation of the second anionized layer.

12. The capacitor of claim 11 , wherein A2 is at least one of Li, Na, K, Rb, or Cs.

13. The capacitor of claim 11 , wherein the composition of the second anionized layer is represented by at least one of [LiO] − , [NaO] − , [KO] − , or [RbO] − .

14. The capacitor of claim 1 , wherein the interlayer comprises the second anionized layer and further comprises:
a third neutral layer including a composition represented by [B2O 2 ], wherein B2 is a tetravalent cation.

15. The capacitor of claim 14 , wherein B2 is at least one of Ti, Hf, or Zr.

16. The capacitor of claim 14 , wherein the composition of the third neutral layer is represented by at least one of [TiO 2 ], [ZrO 2 ], or [HfO 2 ].

17. The capacitor of claim 1 , wherein the interlayer includes a metal oxide having a perovskite-type crystal structure and is represented by Formula 2:
[A2B2O x ]  <Formula 2>

wherein, in Formula 2, A2 is the monovalent cation of the second anionized layer, B2 is a tetravalent cation, and 2.5≤x≤3.0.

18. The capacitor of claim 1 , wherein the interlayer includes a metal oxide represented by at least one of [LiTiO x ], [NaTiO x ], [KTiO x ], [RbTiO x ], [LiZrO x ], NaZrO x ], [KzrO x ], [RbZrO x ], [LiHfO x ], [NaHfO x ], [KhfO x ], or [RbHfO x ], and
wherein 2.5<x≤3.0.

19. The capacitor of claim 1 , wherein the first neutral layer includes a metal oxide that has a perovskite-type crystal structure and is represented by Formula 3:
[A3B3O 3 ]  <Formula 3>

wherein, in Formula 3, A3 and B2 are the plurality of trivalent cations.

20. The capacitor of claim 1 , wherein the interlayer includes a metal oxide represented by at least one of [ScAlO 3 ], [YalO 3 ], [LaAlO 3 ], [CeAlO 3 ], [PrAlO 3 ], [NdAlO 3 ], [SmAlO 3 ], [DyAlO 3 ], [ScGaO 3 ], [YgaO 3 ], [LaGaO 3 ], [CeGaO 3 ], [PrGaO 3 ], [NdGaO 3 ], [SmGaO 3 ], [DyGaO 3 ], [ScInO 3 ], [YinO 3 ], [LaInO 3 ], [CeInO 3 ], [PrInO 3 ], [NdInO 3 ], [SmInO 3 ], or [DyInO 3 ].

21. The capacitor of claim 1 , wherein the first neutral layer comprises:
a first cationized layer including a composition represented by [A3O] + ; and
a third anionized layer including a composition represented by [B3O 2 ] − ,
wherein A3 and B3 are the plurality of trivalent cations, and A3 and B3 are different metals from each other.

22. The capacitor of claim 21 , wherein
A3 is at least one of Sc, Y, La, Ce, Pr, Nd, Sm, or Dy, and
B3 is at least one of Al, Ga, or In.

23. The capacitor of claim 21 , wherein
the composition of the first cationized layer is represented by at least one of [ScO] + , [YO] + , [LaO] + , [CeO] + , [PrO] + , [NdO] + , [SmO] + , or [DyO] + ; and
the composition of the third anionized layer is represented by at least one of [AlO 2 ] − , [GaO 2 ] − , or [InO 2 ] − .

24. The capacitor of claim 1 , wherein
the interlayer comprises one to three unit cells,
the thickness of the interlayer is about 1Å to about 15Å,
a Schottky barrier height (SBH) between at least one of the first thin-film electrode layer and the dielectric layer or the second thin-film electrode layer and the dielectric layer is 1.5 eV or more.

25. The capacitor of claim 1 , wherein the dielectric layer includes an oxide that has a perovskite-type crystal structure and is represented by Formula 4:
A4B4O 3   <Formula 4>

wherein, in Formula 4, A4 is a monovalent, divalent, or trivalent cation, and B4 is a trivalent, tetravalent, or pentavalent cation.

26. The capacitor of claim 1 , wherein the dielectric layer includes an oxide represented by at least one of SrTiO 3 , CaTiO 3 , BaTiO 3 , SrHfO3, CaHfO 3 , BaHfO 3 , SrZrO 3 , CaZrO 3 , BaZrO 3 , PbTiO 3 , NaNbO 3 , NaTaO 3 , RbTaO 3 , RbNbO 3 , RbTaO 3 or EuTiO 3 .

27. The capacitor of claim 1 , wherein
the thickness of the dielectric layer is about 10 nm to about 100

Assignees

• Samsung Electronics Co Ltd

Inventors

• Do Euncheol
• Na Byunghoon
• Lee Kiyoung

Classifications

• H10D1/716

  having vertical extensions · CPC title

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title

• H10D1/042

  using deposition processes to form electrode extensions · CPC title

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H10B12/377

  having a storage electrode extension located over the transistor · CPC title