Magnetoresistive stack without radiated field, sensor and magnetic mapping system comprising such a stack

Patent metadata

Field	Value
Publication number	US-12274177-B2
Application number	US-202017762233-A
Country	US
Kind code	B2
Filing date	Sep 16, 2020
Priority date	Sep 19, 2019
Publication date	Apr 8, 2025
Grant date	Apr 8, 2025

Abstract

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

First claim

The invention claimed is:

1. A magnetoresistive stack comprising:
a reference layer comprising:
a first magnetic layer,
a first antiferromagnetic layer in exchange coupling with the first magnetic layer,
a second magnetic layer substantially of the same magnetisation as the first magnetic layer,
a first non-magnetic spacer layer between the first magnetic layer and the second magnetic layer with a thickness enabling an antiferromagnetic RKKY coupling between the first magnetic layer and the second magnetic layer, said antiferromagnetic RKKY coupling having a first coupling intensity,

a free layer having a coercivity lower than 10 microTesla, the free layer comprising:
a third magnetic layer,
a second antiferromagnetic layer in exchange coupling with the third magnetic layer,
a fourth magnetic layer substantially of the same magnetisation as the third magnetic layer,
a second non-magnetic spacer layer between the third magnetic layer and the fourth magnetic layer with a thickness enabling an antiferromagnetic RKKY coupling between the third magnetic layer and the fourth magnetic layer, said antiferromagnetic RKKY coupling having a second coupling intensity lower than the first coupling intensity, and

a third non-magnetic spacer layer separating the reference layer and the free layer.

2. The magnetoresistive stack according to claim 1 , wherein the magnetoresistive stack is a giant magnetoresistance.

3. The magnetoresistive stack according to claim 1 , wherein the third non-magnetic spacer layer is a tunnel barrier and wherein the magnetoresistive stack is a magnetoresistance tunnel.

4. A magnetoresistive sensor comprising at least one magnetoresistive stack according to claim 1 .

5. The magnetoresistive sensor according to claim 4 , comprising a tetrahedral shaped support, and three magnetoresistive stacks and wherein the three magnetoresistive stacks are each arranged on a different face of the tetrahedral shaped support.

6. The magnetoresistive sensor according to claim 5 , comprising a flexible lever arm, said lever arm comprising at its end the tetrahedral, respectively pyramidal, shaped support comprising said magnetoresistive stacks.

7. The magnetoresistive sensor according to claim 4 , comprising a pyramidal shaped support, and four magnetoresistive stacks and wherein the four magnetoresistive stacks are each arranged on a different face of the pyramidal shaped support.

8. A system for magnetically mapping at least one magnetic sample, the system comprising at least one magnetoresistive sensor according to claim 4 for detecting the leakage fields emitted by the magnetic sample, a scanning system and a first current source configured to create a first magnetic field applied to the magnetic sample.

9. A magnetic mapping system according to claim 8 , wherein the first magnetic field created by the first current source is a static magnetic field, wherein the magnetic mapping system comprises a second current source configured to create a dynamic magnetic field applied to the magnetic sample.

10. The magnetic mapping system according to claim 9 , wherein:
the dynamic magnetic field is created at a first frequency, the magnetoresistive sensor is supplied at a second frequency,
each signal captured by the magnetoresistive sensor comprises:
a first continuous signal emitted by the sample subjected to the static magnetic field and
a second alternating signal emitted by the sample subjected to the dynamic magnetic field,

each signal captured by the magnetoresistive sensor is demodulated at the second frequency to recover the first continuous signal emitted by the sample subjected to the static magnetic field and
each signal captured by the magnetoresistive sensor is demodulated at the frequency corresponding to a subtraction of the first frequency from the second frequency to recover the second alternating signal emitted by the sample subjected to the dynamic magnetic field.

Assignees

• Commissariat Energie Atomique

Inventors

• Fermon Claude
• Solignac Aurélie
• Pannetier-Lecoeur Myriam

Classifications

• G01R33/14

  Measuring or plotting hysteresis curves {(G01R33/1207 takes precedence)} · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G01R33/16

  Measuring susceptibility {(G01R33/1238 takes precedence)} · CPC title

• G01R33/1215

  Measuring magnetisation; Particular magnetometers therefor (G01R33/14 takes precedence; electrodynamic magnetometers G01R33/028) · CPC title