Hole transport material, quantum dot light-emitting device and manufacturing method thereof, and display apparatus

Patent metadata

Field	Value
Publication number	US-12274113-B2
Application number	US-202017427012-A
Country	US
Kind code	B2
Filing date	Oct 28, 2020
Priority date	Oct 28, 2020
Publication date	Apr 8, 2025
Grant date	Apr 8, 2025

Abstract

The present disclosure provides a hole transport material, a quantum dot light-emitting device and a manufacturing method thereof and a display apparatus. A surface of a quantum dot is modified with a ligand capable of being cross-linked with a modifying group of the hole transport material, that is, a cross-linking group in the ligand, so that when the quantum dot light-emitting device is manufactured, the cross-linking group of the quantum dot material is cross-linked with the modifying group of the hole transport material under a set external stimulus, so that the coupling degree between a light-emitting layer and a hole transport layer is increased and an interface structure between the light-emitting layer and the hole transport layer is weakened, thus facilitating carrier transmission. Under the condition of not sacrificing the transmission rate of electrons, hole injection is increased to the greatest extent, so as to regulate the injection balance of carriers, improve the carrier recombination rate of the quantum dot light-emitting device, and further improve the luminous efficiency and other device performances of the quantum dot light-emitting device. Moreover, the increase of hole injection will reduce the aggregation of carriers at an interface, thereby improving the stability of the device.

First claim

What is claimed is:

1. A quantum dot light-emitting device, comprising an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode disposed in a stacked mode, wherein
the hole transport layer comprises a hole transport material comprising a body of the hole transport material and a modifying group connected with the body of the hole transport material, wherein the modifying group is configured to be cross-linked with a cross-linking group of a quantum dot material under a set external stimulus, wherein
the light-emitting layer comprises a quantum dot material comprising a quantum dot and a ligand connected with the quantum dot; and
the ligand comprises a coordinating group bonded with the quantum dot, a solubilizing group connected with the coordinating group, and a cross-linking group connected with the solubilizing group, wherein the cross-linking group is cross-linked with the modifying group of the hole transport material;
wherein the quantum dot material and the hole transport material are arranged in different layers;
wherein a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,
a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,
a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,
a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,
a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,
a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

2. The quantum dot light-emitting device according to claim 1 , wherein the cross-linking group comprises at least one of a double bond group, a triple bond group or an epoxy group.

3. The quantum dot light-emitting device according to claim 2 , wherein the cross-linking group comprises at least one of alkenyl group, alkynyl group, ester group, aldehyde group, carbonyl group, azide, cyano group, amino group, carboxyl group, mercapto group, ethylene oxide, propylene oxide, butylene oxide or pentane oxide.

4. The quantum dot light-emitting device according to claim 1 , wherein the solubilizing group comprises at least one of ethyl, n-butyl, tert-butyl, n-octyl, tert-butyl phenyl, methoxy or n-butoxy.

5. The quantum dot light-emitting device according to claim 1 , wherein the coordinating group comprises at least one of amino, polyamino, hydroxyl, polyhydroxy, mercapto, polythiol, thioether, polythioether, phosphine or phosphine oxide.

6. The quantum dot light-emitting device according to claim 1 , further comprising a substrate, wherein the anode, the hole transport layer, the light-emitting layer, the electron transport layer and the cathode are sequentially stacked on the substrate; or further comprising a substrate, wherein the cathode, the electron transport layer, the light-emitting layer, the hole transport layer and the anode are sequentially stacked on the substrate.

7. A display apparatus, comprising a quantum dot light-emitting device, wherein the quantum dot light-emitting device comprises an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode disposed in a stacked mode, wherein
the hole transport layer comprises a hole transport material comprising a body of the hole transport material and a modifying group connected with the body of the hole transport material, wherein the modifying group is configured to be cross-linked with a cross-linking group of a quantum dot material under a set external stimulus, wherein
the light-emitting layer comprises a quantum dot material comprising a quantum dot and a ligand connected with the quantum dot; and
the ligand comprises a coordinating group bonded with the quantum dot, a solubilizing group connected with the coordinating group, and a cross-linking group connected with the solubilizing group, wherein the cross-linking group is cross-linked with the modifying group of the hole transport material;
wherein the quantum dot material and the hole transport material are arranged in different layers;
wherein a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-l

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Haowei

Classifications

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K85/631

  Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine · CPC title

• H10K85/6572

  comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole · CPC title

• H10K2102/321

  Inverted OLED, i.e. having cathode between substrate and anode · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title