Ternary paraelectric material with space group Cc and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12269753-B2
Application number	US-202318356287-A
Country	US
Kind code	B2
Filing date	Jul 21, 2023
Priority date	Oct 23, 2019
Publication date	Apr 8, 2025
Grant date	Apr 8, 2025

Abstract

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A 2 B 4 O 11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A 2 B 4 O 11 material may be Na 2 Nb 4 O 11 in which bandgap energy thereof is greater than that of STO. The A 2 B 4 O 11 material may have relative density that is greater than 90% or more.

First claim

What is claimed is:

1. A ternary paraelectric having a Cc structure comprising:
a material that belongs to a monoclinic system and is space group No. 9,
wherein the material has a chemical formula of A 2 B 4 O 11
wherein a relative density of the A 2 B 4 O 11 material is 90% or more compared to a fully dense A 2 B 4 O 11 not containing a pore.

2. The ternary paraelectric of claim 1 , wherein
the material has a dielectric constant of 150 to 250,
“A” is a Group 1 element, and
“B” is a Group 5 element.

3. The ternary paraelectric of claim 2 , wherein “A” comprises at least one of Na, K, Li, and Rb.

4. The ternary paraelectric of claim 2 , wherein “B” comprises at least one of Nb, V, and Ta.

5. The ternary paraelectric of claim 2 , wherein the A 2 B 4 O 11 material comprises Na 2 Nb 4 O 11 , and
wherein a bandgap energy of the Na 2 Nb 4 O 11 is greater than that of strontium titanate (STO).

6. A capacitor comprising:
a first electrode;
a second electrode; and
a dielectric layer, the dielectric layer comprising the ternary paraelectric having the Cc structure of claim 1 .

7. A semiconductor device comprising the ternary paraelectric having the Cc structure of claim 1 .

8. A method of manufacturing a ternary paraelectric having a Cc structure, the method comprising:
preparing ternary dielectric powder;
compacting the prepared ternary dielectric powder; and
sintering the compacted ternary dielectric powder;
wherein the ternary paraelectric includes a A 2 B 4 O 11 material that belongs to a monoclinic system and is space group No. 9, and
wherein a relative density of the A 2 B 4 O 11 material, after the sintering, is 90% or more compared to a fully dense A 2 B 4 O 11 not containing a pore.

9. The method of claim 8 , wherein
the material has a dielectric constant of 150 to 250,
“A” is a Group 1 element, and
“B” is a Group 5 element.

10. The method of claim 8 , further comprising re-heating a resultant product of the sintering.

11. The method of claim 10 , wherein the sintering comprises a spark plasma sintering (SPS) operation.

12. The method of claim 10 , wherein the re-heating is performed at a higher temperature than the sintering.

13. The method of claim 8 , wherein the preparing of the ternary dielectric powder comprises:
mixing a first precursor including “A” with a second precursor including “B”;
milling the mixture of the first and second precursors after adding a solvent to the mixture;
drying a resultant product after the milling is completed; and
calcining the dried resultant product.

14. The method of claim 13 , wherein the milling comprises a planetary milling operation.

15. The method of claim 8 , wherein the compacting the prepared ternary dielectric powder comprises:
molding the ternary dielectric powder into a pellet shape; and
compacting the molded ternary dielectric powder.

16. The method of claim 8 , wherein “A” is at least one of Na, K, Li, and Rb.

17. The method of claim 8 , wherein “B” is at least one of Nb, V, and Ta.

18. The method of claim 8 , wherein the A 2 B 4 O 11 material comprises Na 2 Nb 4 O 11 , and
wherein a bandgap energy of the Na 2 Nb 4 O 11 is greater than that of strontium titanate (STO).

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jo Giyoung
• Kwak Chan
• Kim Hyungjun
• Do Euncheol
• Park Hyeoncheol
• Lee Changsoo

Classifications

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10B12/37

  the capacitor being at least partially in a trench in the substrate · CPC title

• C04B35/645

  Pressure sintering · CPC title

• C04B35/62695

  Granulation or pelletising (devices for shaping artificial aggregates from ceramic mixtures B28B1/004) · CPC title

• C04B35/6261

  Milling · CPC title