High-resistance resistor based on silicon carbide and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12268013-B2
Application number	US-202217885570-A
Country	US
Kind code	B2
Filing date	Aug 11, 2022
Priority date	Mar 23, 2022
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4H—SiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 TΩ or more, and satisfying requirements of the precision measurement industry.

First claim

What is claimed is:

1. A high-resistance resistor based on silicon carbide, comprising:
a semi-insulating 4H—SiC silicon carbide substrate; wherein a silicon surface and a carbon surface of the semi-insulating 4H—SiC silicon carbide substrate are provided with aluminum oxide insulating layers, wherein the aluminum oxide insulating layers are symmetrical and atomic-thickness; thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm; conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation; and thicknesses of the conductive metal electrodes are 100 nm-500 nm.

2. The high-resistance resistor based on silicon carbide according to claim 1 , wherein the conductive metal electrodes are made of at least one selected from the group consisting of gold, silver, copper and aluminum.

3. A manufacturing method of the high-resistance resistor based on silicon carbide according to claim 1 , comprising:
step 1: selecting the semi-insulating 4H—SiC silicon carbide substrate having a certain thickness and resistivity; marking the carbon surface and the silicon surface of the semi-insulating 4H—SiC silicon carbide substrate by an atomic force microscope;
step 2: cleaning and drying the semi-insulating 4H—SiC silicon carbide substrate; gently rubbing a front face and a back face of the semi-insulating 4H—SiC silicon carbide substrate repeatedly by disposable gloves until the front face and the back face are washed with deionized water to form a uniform water film; then placing the washed semi-insulating 4H—SiC silicon carbide substrate in an ultrasonic cleaner; ultrasonically cleaning the semi-insulating 4H—SiC silicon carbide substrate with the deionized water, acetone and isopropanol separately each for 15 minutes; and washing the semi-insulating 4H—SiC silicon carbide substrate for later use;
step 3: using an atomic layer deposition technology or a magnetron sputtering technology to deposit 0.2 nm-2 nm of the aluminum oxide insulating layers on the carbon surface and the silicon surface of the semi-insulating 4H—SiC silicon carbide substrate respectively;
step 4: sticking electrode masks on two sides of the deposited aluminum oxide insulating layers respectively; determining covering areas of the electrode masks according to a resistance of a high-resistance resistor to be manufactured;
step 5: placing the semi-insulating 4H—SiC silicon carbide substrate having stuck electrode masks in a cavity of a magnetron sputtering instrument; spraying a layer of the conductive metal electrode having the thickness of 100 nm-500 nm on each of the silicon surface and the carbon surface of the semi-insulating 4H—SiC silicon carbide substrate through magnetron sputtering; wherein the silicon surface and the carbon surface have the deposited aluminum oxide insulating layers; wherein the conductive metal electrode is made of at least one selected from the group consisting of gold, silver, copper and aluminum; and
step 6: taking out a sample from a coating chamber and removing the electrode masks to obtain the high-resistance resistor based on silicon carbide; and testing volt-ampere characteristics of the high-resistance resistor by a semiconductor analyzer.

4. A manufacturing method of the high-resistance resistor based on the semi-insulating 4H—SiC silicon carbide according to claim 2 , comprising:
step 1: selecting the semi-insulating 4H—SiC silicon carbide substrate having a certain thickness and resistivity; marking the carbon surface and the silicon surface of the semi-insulating 4H—SiC silicon carbide substrate by an atomic force microscope;
step 2: cleaning and drying the semi-insulating 4H—SiC silicon carbide substrate; gently rubbing a front face and a back face of the semi-insulating 4H—SiC silicon carbide substrate repeatedly by disposable gloves until the front face and the back face are washed with deionized water to form a uniform water film; then placing the washed semi-insulating 4H—SiC silicon carbide substrate in an ultrasonic cleaner; ultrasonically cleaning the semi-insulating 4H—SiC silicon carbide substrate with the deionized water, acetone and isopropanol separately each for 15 minutes; and washing the semi-insulating 4H—SiC silicon carbide substrate for later use;
step 3: using an atomic layer deposition technology or a magnetron sputtering technology to deposit 0.2 nm-2 nm of the aluminum oxide insulating layers on the carbon surface and the silicon surface of the semi-insulating 4H—SiC silicon carbide substrate respectively;
step 4: sticking electrode masks on two sides of the deposited aluminum oxide insulating layers respectively; determining covering areas of the electrode masks according to a resistance of a high-resistance resistor to be manufactured;
step 5: placing the semi-insulating 4H—SiC silicon carbide substrate having stuck electrode masks in a cavity of a magnetron sputtering instrument; spraying a layer of the conductive metal electrode having the thickness of 100 nm-500 nm on each of the silicon surface and the carbon surface of the semi-insulating 4H—SiC silicon carbide substrate through magnetron sputtering; wherein the silicon surface and the carbon surface have the deposited aluminum oxide insulating layers; wherein the conductive metal electrode is made of at least one selected from the group consisting of gold, silver, copper and aluminum; and
step 6: taking out a sample from a coating chamber and removing the electrode masks to obtain the high-resistance resistor based on silicon carbide; and testing volt-ampere characteristics of the high-resistance resistor by a semiconductor analyzer.

Assignees

• Univ Taiyuan Technology
• Institute Of New Materials And Chemical Engineering Zhejiang Univ Shanxi
• Talyuan Univ Of Technology

Inventors

• Xi Yuying
• Cui Yanxia
• Hu Kun
• Tian Yuan
• Li Guohui
• Xu Bingshe

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10W44/401 Primary

  Resistive arrangements (H10W44/20, H10W42/80 take precedence) · CPC title