Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound

Patent metadata

Field	Value
Publication number	US-12265333-B2
Application number	US-202117482557-A
Country	US
Kind code	B2
Filing date	Sep 23, 2021
Priority date	Mar 28, 2019
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

First claim

What is claimed is:

1. A composition comprising:
a compound represented by formula (2); and
a solvent,

wherein, in the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; at least one of R 1 and R 2 represents a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthryl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted tetracenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted trinaphthylenyl group, a substituted or unsubstituted heptacenyl group, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 2 to 10, wherein a plurality of R 1 s are identical or different from each other, a plurality of R 2 s are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and R 4 represents an organic group having a valency of n and having an aromatic ring which has 5 to 40 ring atoms.

2. The composition according to claim 1 , wherein the substituted or unsubstituted monovalent aliphatic hydrocarbon group which is represented by R 3 is a substituted or unsubstituted monovalent chain hydrocarbon group.

3. The composition according to claim 1 , wherein R 3 represents a hydrogen atom.

4. The composition according to claim 1 , wherein at least one of R 1 and R 2 represents a group represented by formula (3):

wherein, in the formula (3), R 5 represents a hydrogen atom or a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; Ar represents a group obtained by removing (m+1) hydrogen atoms from an aromatic ring having 6 to 30 ring atoms; m is an integer of 1 to 3; ** denotes a binding site to a carbon atom to which R 1 or R 2 bonds in the formula (1);
and in a case in which m is no less than 2, a plurality of R 5 s are identical or different from each other.

5. The composition according to claim 1 , wherein a proportion of hydrogen atoms with respect to all atoms constituting the compound is no greater than 7% by mass.

6. The composition according to claim 1 , wherein a molecular weight of the compound is no less than 300 and no greater than 3,000.

7. A method of forming a resist underlayer film, the method comprising:
applying the composition according to claim 1 directly or indirectly on a substrate.

8. A method of producing a patterned substrate, the method comprising:
forming a resist underlayer film directly or indirectly on a substrate by applying the composition according to claim 1 ;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching using the resist pattern as a mask.

9. The method according to claim 8 , further comprising, before forming the resist pattern, forming a silicon-containing film directly or indirectly on the resist underlayer film formed.

10. A compound represented by formula (2):

wherein, in the formula (2), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; at least one of R 1 and R 2 represents a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthryl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted tetracenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted trinaphthylenyl group, a substituted or unsubstituted heptacenyl group, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 2 to 10, wherein a plurality of R 1 s are identical or different from each other, a plurality of R 2 s are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and R 4 represents an organic group having a valency of n and having an aromatic ring which has 5 to 40 ring atoms.

11. The composition according to claim 1 , wherein at least one of R 1 and R 2 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted pyrenyl group.

12. The compound according to claim 10 , wherein at least one of R 1 and R 2 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted pyrenyl group.

13. The compound according to claim 10 , wherein the substituted or unsubstituted monovalent aliphatic hydrocarbon group which is represented by R 3 is a substituted or unsubstituted monovalent chain hydrocarbon group.

14. The compound according to claim 10 , wherein R 3 represents a hydrogen atom.

15. The composition according to claim 1 , wherein R 4 represents a group represented by formula (II-1), formula (II-2), formula (II-3), formula (II-4), or formula (II-5):

wherein ** denotes a binding site to a carbon atom to which R 4 in the formula (2) bonds.

16. The compound according to claim 10 , wherein R 4 represents a group represented by formula (II-1), formula (II-2), formula (II-3), formula (II-4), or formula (II-5):

wherein *** denotes a binding site to a carbon atom to which R 4 in the formula (2) bonds.

Assignees

• Jsr Corp

Inventors

• Nakafuji Shin-Ya
• Taniguchi Tomoaki
• Takanashi Kazunori

Classifications

• C09D161/06

  of aldehydes with phenols · CPC title

• C08G8/10

  with phenol · CPC title

• C07D307/36 Primary

  with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to ring carbon atoms · CPC title

• C07D207/323

  with only hydrogen atoms or radicals containing only hydrogen and carbon atoms directly attached to the ring nitrogen atoms · CPC title

• C07C211/54

  having amino groups bound to two or three six-membered aromatic rings · CPC title