Beta-sialon phosphor and light emitting device

Patent metadata

Field	Value
Publication number	US-12264274-B2
Application number	US-202017636264-A
Country	US
Kind code	B2
Filing date	Aug 14, 2020
Priority date	Aug 20, 2019
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

A europium-doped β-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P 8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P 80 [at %], P 8 /P 80 ≤0.9 is satisfied. A light emitting device containing this β-sialon phosphor.

First claim

The invention claimed is:

1. A europium-doped β-sialon phosphor,
wherein an atomic percentage of an aluminum element to all elements at a depth of 8 nm from a surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Al) 8 , an atomic percentage of an aluminum element to all elements at a depth of 80 nm from the surface of the phosphor is indicated by P(Al) 80 , and wherein
P(Al) 8 /P(Al) 80 is ≤0.8,
the P(Al) 8 is from 0.3 or more to 0.8 or less, and
the β-sialon phosphor is represented by general formula Si 6-Z Al Z O Z N 8-Z :Eu 2+ (0<Z≤4.2).

2. The β-sialon phosphor according to claim 1 ,
wherein the P(Al) 80 is from 0.9 or more to 5 or less.

3. The β-sialon phosphor according to claim 1 ,
wherein an atomic percentage of an aluminum element to all elements on an outermost surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Al) 0 , and wherein P(Al) 0 is 0.1 or less.

4. The β-sialon phosphor according to claim 1 ,
wherein a 50% diameter D V50 in a cumulative volume in particle size distribution is 5 μm or more and 50 μm or less.

5. The β-sialon phosphor according to claim 1 ,
wherein an atomic percentage of a silicon element to all elements at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Si) 8 , an atomic percentage of a silicon element to all elements at a depth of 80 nm from the surface of the phosphor is indicated by P(Si) 80 , and wherein P(Si) 8 /P(Si) 80 is ≤0.95.

6. A light emitting device comprising:
a light emitting light source; and
a wavelength conversion member,
wherein the wavelength conversion member contains a phosphor, and
the phosphor contains the β-sialon phosphor according to claim 1 .

7. The light emitting device according to claim 6 ,
wherein the light emitting light source includes an LED chip that generates light having a wavelength of 300 nm to 500 nm.

8. The light emitting device according to claim 6 ,
wherein the phosphor further contains a manganese-doped KSF-based phosphor.

Assignees

• Denka Company Ltd

Inventors

• Nomiyama Tomohiro
• Kobayashi Manabu
• Miyazaki Masaru
• OKUZONO Tatsuya

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10H20/8513

  having two or more wavelength conversion materials · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title

• C09K11/617

  Silicates · CPC title

• C01P2004/61

  Micrometer sized, i.e. from 1-100 micrometer · CPC title