Semiconductor nanoparticles and method of producing semiconductor nanoparticles

Patent metadata

Field	Value
Publication number	US-12264273-B2
Application number	US-202318464517-A
Country	US
Kind code	B2
Filing date	Sep 11, 2023
Priority date	Mar 18, 2016
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M 1 , M 2 , and Z. M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. M 2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

First claim

What is claimed is:

1. A method of producing semiconductor nanoparticles, comprising:
providing a dispersion by dispersing primary semiconductor nanoparticles into a solvent, each of the primary semiconductor nanoparticles comprising a semiconductor that contains M 1 , M 2 , and Z, wherein M 1 is at least one element selected from the group consisting of Ag, Cu, and Au, and comprises at least Ag, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and comprises at least In, and Z is at least one element selected from the group consisting of S, Se, and Te, and comprises at least S; and
adding, to the dispersion, a compound containing a Group 13 element, and an elemental substance of a Group 16 element or a compound containing the Group 16 element to form a semiconductor layer comprising the Group 13 element and the Group 16 element on a surface of each of the primary semiconductor nanoparticles,
wherein the Group 13 element comprises at least Ga and the Group 16 element comprises at least S,
wherein the semiconductor layer has an amorphous structure, and
wherein a photoluminescence lifetime of the semiconductor nanoparticles is 200 ns or less.

2. The method of producing semiconductor nanoparticles according to claim 1 , wherein the compound containing the Group 16 element is dibenzyldisulfide.

3. The method of producing semiconductor nanoparticles according to claim 1 , further comprising, after the adding:
heating the dispersion at a predetermined rate up to a peak temperature that is in a range of 200° C. to 290° C., and
holding the dispersion at the peak temperature for a predetermined period of time.

4. The method of producing semiconductor nanoparticles according to claim 3 , wherein the elemental substance of the Group 16 element is an elemental sulfur, and the predetermined period of time for holding the dispersion at the peak temperature is not less than 40 minutes and not more than 60 minutes.

5. The method of producing semiconductor nanoparticles according to claim 1 , wherein the dispersion contains n-tetradecylamine.

Assignees

• Univ Osaka
• National Univ Corporation Tokai National Higher Education And Research System
• Nichia Corp

Inventors

• Kuwabata Susumu
• Uematsu Taro
• Wajima Kazutaka
• Torimoto Tsukasa
• Kameyama Tatsuya
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• G02F1/133614

  using photoluminescence, e.g. phosphors illuminated by UV or blue light · CPC title

• C09B67/0097

  Dye preparations of special physical nature; Tablets, films, extrusion, microcapsules, sheets, pads, bags with dyes · CPC title

• C09K11/02

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• Y10S977/95

  Electromagnetic energy · CPC title