Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method
US-2015225437-A1 · Aug 13, 2015 · US
US12264168B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12264168-B2 |
| Application number | US-202017620934-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2020 |
| Priority date | Jun 21, 2019 |
| Publication date | Apr 1, 2025 |
| Grant date | Apr 1, 2025 |
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The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R 1 to R 12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R 1 to R 12 represents the fluorine atom-containing group; where R 13 to R 17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R 13 to R 17 is 3 or more.
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The invention claimed is: 1. A ruthenium compound represented by the following general formula (2): where R 13 and R 15 represent hydrogen atoms, and R 14 , R 16 and R 17 represent methyl groups. 2. A thin-film forming raw material, comprising the ruthenium compound of claim 1 . 3. A method of producing a thin-film containing ruthenium atoms on a surface of a substrate, comprising the steps of: vaporizing the thin-film forming raw material of claim 2 ; introducing vapor containing a ruthenium compound obtained in the vaporization step into a film formation chamber in which the substrate is set; and subjecting the ruthenium compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing ruthenium atoms on the surface of the substrate.
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