Ruthenium compound, thin-film forming raw material, and method of producing thin film

US12264168B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12264168-B2
Application numberUS-202017620934-A
CountryUS
Kind codeB2
Filing dateJun 10, 2020
Priority dateJun 21, 2019
Publication dateApr 1, 2025
Grant dateApr 1, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R 1 to R 12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R 1 to R 12 represents the fluorine atom-containing group; where R 13 to R 17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R 13 to R 17 is 3 or more.

First claim

Opening claim text (preview).

The invention claimed is: 1. A ruthenium compound represented by the following general formula (2): where R 13 and R 15 represent hydrogen atoms, and R 14 , R 16 and R 17 represent methyl groups. 2. A thin-film forming raw material, comprising the ruthenium compound of claim 1 . 3. A method of producing a thin-film containing ruthenium atoms on a surface of a substrate, comprising the steps of: vaporizing the thin-film forming raw material of claim 2 ; introducing vapor containing a ruthenium compound obtained in the vaporization step into a film formation chamber in which the substrate is set; and subjecting the ruthenium compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing ruthenium atoms on the surface of the substrate.

Assignees

Inventors

Classifications

  • from metallo-organic compounds · CPC title

  • Metallocenes · CPC title

  • characterized by the use of precursors specially adapted for ALD · CPC title

  • Fuel cells · CPC title

  • Ruthenium compounds · CPC title

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What does patent US12264168B2 cover?
The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R 1 to R 12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon a…
Who is the assignee on this patent?
Adeka Corp
What technology area does this patent fall under?
Primary CPC classification C07F15/0046. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 01 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).