Acoustic wave device and filter

Patent metadata

Field	Value
Publication number	US-12255604-B2
Application number	US-202117199349-A
Country	US
Kind code	B2
Filing date	Mar 11, 2021
Priority date	Mar 17, 2020
Publication date	Mar 18, 2025
Grant date	Mar 18, 2025

Abstract

An acoustic wave device includes a piezoelectric layer, the piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate; an upper conductive layer having a substantially consistent density, on or over the upper surface of the piezoelectric layer; a lower conductive layer having a substantially consistent density, on or below the lower surface of the piezoelectric layer; and a first additional film having a substantially consistent density, wherein at least one of the upper and lower conductive layers is mainly made of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium, and wherein at least a part of the first additional film is in the resonance region in the plan view, and the density of the first additional film is equal to or less than the density of aluminum.

First claim

What is claimed is:

1. An acoustic wave device comprising:
a piezoelectric layer having an upper surface and a lower surface, the piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate;
an upper conductive layer having a substantially consistent density, on or over the upper surface of the piezoelectric layer;
a lower conductive layer having a substantially consistent density, on or below the lower surface of the piezoelectric layer, a region where the upper conductive layer faces the lower conductive layer across the piezoelectric layer in a plan view defining a resonance region;
a first additional film having a substantially consistent density, disposed in at least one of the following locations: between the upper conductive layer and the piezoelectric layer, between the lower conductive layer and the piezoelectric layer, on an upper surface of the upper conductive layer, within the upper conductive layer as inserted therein, on a lower surface of the lower conductive layer, and within the lower conductive layer as inserted therein; and
a second additional film, above or below the piezoelectric layer, in each of one or more of lateral edges of the resonance region, imparting an additional mass to the upper conductive layer or the lower conductive layer, the second additional film being absent in a central area of the resonance region other than said one or more of the lateral edges,
wherein at least one of the upper and lower conductive layers is mainly made of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium, and
wherein at least a part of the first additional film is in the resonance region in the plan view, and the density of the first additional film is equal to or less than the density of aluminum.

2. The acoustic wave device according to claim 1 , wherein the first additional film is provided singly or in a plurality, and a thickness of the first additional film in case of the single first additional film or a total thickness of the first additional films in case of the plurality is greater than 0 and is equal to or less than 0.18 times a thickness of the piezoelectric layer.

3. The acoustic wave device according to claim 1 , wherein the first additional film is mainly made of aluminum.

4. The acoustic wave device according to claim 1 , wherein the first additional film is an insulating film having a relative permittivity less than a relative permittivity of the piezoelectric layer.

5. The acoustic wave device according to claim 1 , wherein the at least one of the upper and lower conductive layers contains 80 atomic % or greater of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium.

6. An acoustic wave device comprising:
a piezoelectric layer having an upper surface and a lower surface, the piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate;
an upper conductive layer having a substantially consistent density, on or over the upper surface of the piezoelectric layer;
a lower conductive layer having a substantially consistent density, on or below the lower surface of the piezoelectric layer, a region where the upper conductive layer faces the lower conductive layer across the piezoelectric layer in a plan view defining a resonance region, at least one of the upper and lower conductive layers being mainly made of aluminum;
a first additional film having a substantially consistent density, disposed in at least one of the following locations: between the upper conductive layer and the piezoelectric layer, between the lower conductive layer and the piezoelectric layer, on an upper surface of the upper conductive layer, within the upper conductive layer as inserted therein, on a lower surface of the lower conductive layer, and within the lower conductive layer as inserted therein; and
a second additional film, above or below the piezoelectric layer, in each of one or more of lateral edges of the resonance region, imparting an additional mass to the upper conductive layer or the lower conductive layer, the second additional film being absent in a central area of the resonance region other than said one or more of the lateral edges,
wherein at least a part of the first additional film is in the resonance region in the plan view, and the first additional film is mainly made of silicon oxide.

7. The acoustic wave device according to claim 6 , wherein the at least one of the upper and lower conductive layers contains 80 atomic % or greater of aluminum.

8. The acoustic wave device according to claim 6 , wherein a sum of the concentration of oxygen and the concentration of silicon in the first additional film is 80 atomic % or greater.

9. The acoustic wave device according to claim 6 , wherein the first additional film is provided singly or in a plurality, and a thickness of the first additional film in case of the single first additional film or a total thickness of the first additional films in case of the plurality is greater than 0 and is equal to or less than 0.18 times a thickness of the piezoelectric layer.

10. A filter comprising:
a first resonator including:
a first piezoelectric layer having an upper surface and a lower surface, the first piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate,
a first upper conductive layer having a substantially consistent density, on or over the upper surface of the first piezoelectric layer,
a first lower conductive layer having a substantially consistent density, on or below the lower surface of the first piezoelectric layer, a region where the first upper conductive layer faces the first lower conductive layer across the first piezoelectric layer in a plan view defining a resonance region,
an additional film having a substantially consistent density, disposed in at least one of the following locations: between the first upper conductive layer and the first piezoelectric layer, between the first lower conductive layer and the first piezoelectric layer, on an upper surface of the first upper conductive layer, within the first upper conductive layer as inserted therein, on a lower surface of the first lower conductive layer, and within the first lower conductive layer as inserted therein, and
a frequency adjusting film having a density greater the density of the additional film in the resonance region,
wherein at least one of the first upper and first lower conductive layers is mainly made of ruthenium, chrome, copper, molybdenum, tungsten, tantalum, platinum, rhodium, or iridium, and
wherein at least a part of the additional film is in the resonance region in the plan view, and the density of the additional film is equal to or less than the density of aluminum; and

a second resonator including a second upper conductive layer and a second lower conductive layer sandwiching a second piezoelectric layer therebetween, the second piezoelectric layer being a rotated Y-cut lithium niobate substrate or an X-cut lithium tantalate substrate, no additional film and no frequency adjusting film being disposed in any of the following locations in the second resonator: between the second upper conductive layer and the second piezoelectric layer, between the second lower conductive layer and the second piezoelectric layer, on an upper surface of the second upper conductive layer, within the second upper conductive layer, on a lower surface of the second lower conductive layer, and within the second lower conductive layer.

11. The filter according to claim 10 , further comprising:
an input terminal;
an output terminal;

Assignees

• Taiyo Yuden Kk

Inventors

• Ishida Mamoru
• Matsuda Takashi

Classifications

• H03H9/175 Primary

  Acoustic mirrors · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/564

  implemented with thin-film techniques · CPC title

• H03H9/562

  comprising a ceramic piezoelectric layer · CPC title

• H03H9/176

  consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title