Optoelectronic unit and method for identifying an optoelectronic unit

Patent metadata

Field	Value
Publication number	US-12255271-B2
Application number	US-202118013543-A
Country	US
Kind code	B2
Filing date	Sep 8, 2021
Priority date	Sep 11, 2020
Publication date	Mar 18, 2025
Grant date	Mar 18, 2025

Abstract

An optoelectronic unit includes a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit. The optoelectronic unit also includes a component including an optically active material. The component is arranged at least partially in the beam path of the semiconductor chip. The optically active material is not intended to be excited by the primary radiation with the first wavelength range. The optically active material incudes a proportion in the component of 0.004 wt %, inclusive, to 1 wt %, inclusive.

First claim

The invention claimed is:

1. An optoelectronic unit comprising
a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit,
a component comprising an optically active material,
wherein
the component is arranged at least partially in the beam path of the semiconductor chip,
the optically active material is not intended to be excited by the primary radiation with the first wavelength range, and
the optically active material comprises a proportion in the component of 0.004 wt %, inclusive, to 1 wt %, inclusive.

2. The optoelectronic unit according to claim 1 ,
wherein the semiconductor chip emits primary radiation in the visible wavelength range.

3. The optoelectronic unit according to claim 1 ,
wherein the component comprises at least one phosphor configured to at least partially convert the radiation of the semiconductor chip into secondary radiation.

4. The optoelectronic unit according to claim 1 ,
wherein the optoelectronic unit emits radiation in the visible wavelength range during operation.

5. The optoelectronic unit according to claim 1 ,
wherein the component comprises or is an optical element, a casting, a conversion layer, or a passivation layer of the semiconductor chip.

6. The optoelectronic unit according to claim 1 ,
wherein the optoelectronic unit is free of a semiconductor chip or an optically active element configured to excite the optically active material.

7. The optoelectronic unit according to claim 1 ,
wherein the optically active material substantially does not absorb radiation in the visible spectral range.

8. The optoelectronic unit according to claim 1 ,
wherein the optically active material is substantially transparent to radiation emitted by the optoelectronic unit during operation.

9. The optoelectronic unit according to claim 1 ,
wherein the optically active material does not substantially affect the optical properties of the optoelectronic unit.

10. The optoelectronic unit according to claim 1 ,
wherein the optically active material is configured to absorb radiation of a second wavelength range and to convert it into secondary radiation.

11. The optoelectronic unit according to claim 10 , wherein the second wavelength range comprises shorter wavelengths than the first wavelength range, and wherein the optically active material converts the radiation of the second wavelength range into radiation with longer wavelengths.

12. The optoelectronic unit according to claim 10 ,
wherein the second wavelength range comprises longer wavelengths than the first wavelength range and wherein the optically active material converts the radiation of the second wavelength range into radiation with shorter wavelengths.

13. The optoelectronic unit according to claim 1 ,
wherein the optically active material comprises a recognizable emission spectrum.

14. The optoelectronic unit according to claim 1 ,
wherein the optically active material comprises CeMgAl 11 O 19 :Tb, BaMgAl 10 O 17 :Eu and/or Y 2 O 3 :Eu or consists of CeMgAl 11 O 19 :Tb, BaMgAl 10 O 17 :Eu and/or Y 2 O 3 :Eu.

15. A method for identifying an optoelectronic unit comprising
providing an optoelectronic unit according to claim 1 ,
irradiating the optoelectronic unit with electromagnetic radiation of a second wavelength range from outside the optoelectronic unit,
detecting the secondary radiation emitted by the optoelectronic unit.

16. The method according to claim 15 ,
wherein the second wavelength range comprises shorter wavelengths than the first wavelength range.

17. The method according to claim 15 ,
wherein the second wavelength range comprises longer wavelengths than the first wavelength range.

18. The method according to claim 15 ,
wherein the optoelectronic unit is identifiable by means of the secondary radiation.

19. The method according to claim 15 ,
wherein the optically active material converts the radiation of the second wavelength range into radiation in the visible wavelength range.

20. An optoelectronic unit comprising
a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit, and
a component comprising an optically active material,
wherein
the component is arranged at least partially in the beam path of the semiconductor chip,
the optically active material is not intended to be excited by the primary radiation with the first wavelength range,
the optoelectronic unit is free of a semiconductor chip and an optically active element configured to excite the optically active material.

Assignees

• Ams Osram Int Gmbh

Inventors

• Pust Philipp
• Lange Stefan
• Stoll Sebastian

Classifications

• H10H20/8513

  having two or more wavelength conversion materials · CPC title

• G01N21/64

  Fluorescence; Phosphorescence · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title

• H01L33/504

  Electricity · mapped topic

• H01L33/502 Primary

  Electricity · mapped topic