Light emitting device

Patent metadata

Field	Value
Publication number	US-12255269-B2
Application number	US-202217867419-A
Country	US
Kind code	B2
Filing date	Jul 18, 2022
Priority date	Jul 20, 2021
Publication date	Mar 18, 2025
Grant date	Mar 18, 2025

Abstract

A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a light-emitting laminated structure which includes
a first type semiconductor layer,
a second type semiconductor layer,
an active layer interposed between said first type semiconductor layer and said second type semiconductor layer, and configured to emit a light,

a first electrode disposed on said light-emitting laminated structure, and electrically connected to said first type semiconductor layer,
a second electrode disposed on said light-emitting laminated structure, and electrically connected to said second type semiconductor layer,
wherein
at least said first electrode includes a reflection layer, an electrically conductive layer, and an intermediate layer interposed between said reflection layer and said electrically conductive layer,
said reflection layer is configured to reflect the light that is emitted by said active layer,
said intermediate layer includes a barrier layer which has a plurality of repeating paired layer units, the plurality of repeating paired layer units includes at least two repeating paired layer units that are referred to as a first repeating paired layer unit, and a second repeating paired layer unit, said first repeating paired layer unit is closer to said electrically conductive layer than said second repeating paired layer unit, each of said first repeating paired layer unit and said second repeating paired layer unit includes a platinum layer, a thickness of said platinum layer of said first repeating paired layer unit is greater than a thickness of said platinum layer of said second repeating paired layer unit.

2. The light-emitting device as claimed in claim 1 , wherein each of said repeating paired layer units further includes a buffer metal layer that is paired with said platinum layer.

3. The light-emitting device as claimed in claim 2 , wherein said buffer metal layer has one of a nickel layer, a titanium layer, and a combination thereof.

4. The light-emitting device as claimed in claim 2 , wherein a number of said repeating paired layer units ranges from 2 to 5.

5. The light-emitting device as claimed in claim 2 , wherein the thickness of said platinum layer in each of said repeating paired layer units ranges from 20 nm to 150 nm, and said buffer metal layer in each of said repeating paired layer units has a thickness ranging from 40 nm to 200 nm.

6. The light-emitting device as claimed in claim 2 , wherein a number of said repeating paired layer units is greater than two, said first repeating paired layer unit is the closest to said electrically conductive layer, and the thickness of said platinum layer of said first repeating paired layer unit is greater than that of each of the remaining one of said repeating paired layer units.

7. The light-emitting device as claimed in claim 1 , wherein said reflection layer has an aluminum layer, and said electrically conductive layer has one of a gold layer and a gold-tin alloy layer.

8. The light-emitting device as claimed in claim 1 , wherein said light-emitting device is configured as a lateral-chip type light-emitting device, said first electrode includes a pad part, and an extension part that extends from a peripheral region of said pad part, each of said pad part and said extension part includes said reflection layer, said intermediate layer, and said electrically conductive layer.

9. The light-emitting device as claimed in claim 8 , wherein said extension part of said first electrode has a width ranging from 1 μm to 20 μm.

10. The light-emitting device as claimed in claim 8 , wherein said first electrode further includes an ohmic contact layer interposed between said reflection layer of said pad part of said first electrode and said light-emitting laminated structure.

11. The light-emitting device as claimed in claim 10 , wherein said ohmic contact layer has a thickness of not greater than 10 nm.

12. The light-emitting device as claimed in claim 1 , wherein said light-emitting device is configured as a flip-chip type light-emitting device, and further comprising an insulation layer, said light-emitting laminated structure has a top surface and a side wall, and said insulation layer covers said side wall and at least a part of said top surface of said light-emitting laminated structure.

13. The light-emitting device as claimed in claim 12 , wherein each of said first electrode and said second electrode includes a pad part disposed on a top surface of said insulation layer, and a contact part covered by said insulation layer,
said contact part of said first electrode is electrically connected to said first type semiconductor layer of said light-emitting laminated structure,
said contact part of said second electrode is electrically connected to said second type semiconductor layer of said light-emitting laminated structure,
said insulation layer has a first opening to expose a part of said contact part of said first electrode, and a second opening to expose a part of said contact part of said second electrode,
a part of said pad part of said first electrode fills said first opening of said insulation layer and is electrically connected to said contact part of said first electrode, and a part of said pad part of said second electrode fills said second opening of said insulation layer and is electrically connected to said contact part of said second electrode.

14. The light-emitting device as claimed in claim 13 , wherein each of said pad part of said first electrode and said pad part of said second electrode includes said reflection layer, said intermediate layer, and said electrically conductive layer.

15. The light-emitting device as claimed in claim 14 , wherein said barrier layer of said intermediate layer of said pad part includes a plurality of said repeating paired layer units, each of said repeating paired layer units includes said platinum layer and a buffer metal layer.

16. The light-emitting device as claimed in claim 15 , wherein said buffer metal layer has one of a nickel layer, a titanium layer, and a combination thereof.

17. The light-emitting device as claimed in claim 14 , wherein each of said contact part of said first electrode and said contact part of said second electrode includes said reflection layer, said intermediate layer, and said electrically conductive layer.

18. The light-emitting device as claimed in claim 14 , wherein each of said contact part of said first electrode and said contact part of said second electrode includes said reflection layer, a platinum layer, and said electrically conductive layer, and, in each of said contact part of said first electrode and said contact part of said second electrode, said platinum layer is disposed between said reflection layer and said electrically conductive layer.

19. The light-emitting device as claimed in claim 13 , wherein said reflection layer includes a plurality of aluminum layers and titanium layers which are alternately disposed one on another to form multiple stacked layer units.

20. The light-emitting device as claimed in claim 19 , wherein the thicknesses of said multiple stacked layer units of said reflection layer decrease sequentially from a light-emitting side to an electrode side of said light-emitting laminated structure.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Wang Huining
• Xia Hongwei
• Ma Quanyang
• Zhuo Jiali
• Shi Weibin
• Lin Su-Hui
• Yang Renlong
• Chang Chung-Ying

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/831

  characterised by their shape · CPC title