Phase change memory cell with double active volume

Patent metadata

Field	Value
Publication number	US-12250889-B2
Application number	US-202217653143-A
Country	US
Kind code	B2
Filing date	Mar 2, 2022
Priority date	Mar 2, 2022
Publication date	Mar 11, 2025
Grant date	Mar 11, 2025

Abstract

A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

First claim

What is claimed is:

1. A structure comprising:
a first phase change material layer vertically aligned above a bottom electrode;
a dielectric layer vertically aligned above the first phase change material layer;
a second phase change material layer vertically aligned above the dielectric layer;
an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, wherein the inner electrode is the same material as the bottom electrode; and
a top electrode vertically aligned above the second phase change material layer.

2. The structure according to claim 1 , wherein a lateral diameter of the inner electrode is less than a lateral diameter of the bottom electrode.

3. The structure according to claim 1 , further comprising:
a first projection liner vertically aligned between the first phase change material layer and the dielectric layer; and
a second projection liner vertically aligned between the second phase change material layer and the dielectric layer.

4. The structure according to claim 1 , further comprising:
a first thermal barrier layer vertically aligned between the first phase change material layer and the dielectric layer; and
a second thermal barrier layer vertically aligned between the second phase change material layer and the dielectric layer.

5. The structure according to claim 1 , further comprising:
a first adhesion layer vertically aligned between the first phase change material layer and the dielectric layer; and
a second adhesion layer vertically aligned between the second phase change material layer and the dielectric layer.

6. A structure comprising:
a first phase change material layer aligned above a first portion of an inner electrode;
a first outer electrode vertically aligned above the first phase change material layer, wherein the inner electrode is the same material as the first outer electrode;
a second phase change material layer aligned above a second portion of the inner electrode;
a second outer electrode vertically aligned above the second phase change material layer; and
a dielectric layer vertically physically and electrically separating the first phase change material layer and the first outer electrode from the second phase change material layer and the second outer electrode.

7. A structure comprising:
a first phase change material layer aligned above a first outer electrode;
an inner electrode physically and electrically connected between the first phase change material layer and a second phase change material layer, wherein the inner electrode is the same material as the first outer electrode;
a second outer electrode vertically aligned above the second phase change material layer; and
a dielectric layer vertically physically and electrically separating the first phase change material layer and the first outer electrode from the second phase change material layer and the second outer electrode.

8. A structure comprising:
a first phase change material layer vertically aligned above a bottom electrode;
a first liner vertically aligned above the first phase change material layer;
a filament layer vertically aligned above the first liner, wherein the first liner physically separates the first phase change material layer from the filament layer;
a second liner vertically aligned above the filament layer;
a second phase change material layer vertically aligned above the second liner, wherein the second liner physically separates the filament layer from the second phase change material layer;
an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer; and
a top electrode vertically aligned above the second phase change material layer.

9. The structure according to claim 8 , wherein
the filament layer comprises a high-k dielectric.

10. The structure according to claim 8 , wherein
the filament layer comprises a mixed ionic electronic conducting filament.

11. The structure according to claim 8 , wherein
the first liner and the second liner are each a projection layer.

12. The structure according to claim 8 , wherein
the first liner and the second liner are each a thermal barrier layer.

13. The structure according to claim 8 , wherein
the first liner and the second liner are each an adhesion layer.

14. The structure according to claim 9 , further comprising:
a first liner vertically aligned between the first phase change material layer and the bottom electrode; and
a second liner vertically aligned between the second phase change material layer and the top electrode.

15. The structure according to claim 14 , wherein
the first liner and the second liner are each a projection layer.

16. The structure according to claim 14 , wherein
the first liner and the second liner are each a thermal barrier layer.

17. The structure according to claim 14 , wherein
the first liner and the second liner are each an adhesion layer.

18. A method of forming a structure, the method comprising:
forming a first phase change material layer above a bottom electrode;
forming a dielectric layer above the first phase change material layer;
forming an inner electrode in the dielectric layer, wherein the inner electrode is the same material as the bottom electrode;
forming a second phase change material layer above the dielectric layer, wherein the inner electrode physically and electrically is connected to both the first phase change material layer and the second phase change material layer;
forming a top electrode above the second phase change material layer.

19. The method according to claim 18 , further comprising:
providing a high voltage pulse to the dielectric layer to form the inner electrode, wherein
the dielectric layer comprises a dielectric constant greater than or equal to 5.0.

20. The method according to claim 18 , further comprising:
resetting the structure to an amorphous stage by applying a current to the inner electrode.

21. The method according to claim 18 , further comprising:
reading a memory state of the structure by applying a voltage between the bottom electrode and the top electrode.

Assignees

• IBM

Inventors

• Philip Timothy Mathew
• Han Jin Ping
• Brew Kevin W
• Chen Ching-Tzu
• Ok Injo

Classifications

• G11C2013/0045

  Read using current through the cell · CPC title

• G11C13/004

  Reading or sensing circuits or methods · CPC title

• G11C13/0004

  comprising amorphous/crystalline phase transition cells · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10N70/8616

  Thermal insulation means · CPC title