Resist material and pattern forming method

Patent metadata

Field	Value
Publication number	US-12248249-B2
Application number	US-202017623995-A
Country	US
Kind code	B2
Filing date	Jun 30, 2020
Priority date	Jul 2, 2019
Publication date	Mar 11, 2025
Grant date	Mar 11, 2025

Abstract

It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different. R 11 represents a hydrogen atom or an alkyl group optionally having a substituent. R 2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 1 represents a single bond or a linking group.

First claim

The invention claimed is:

1. A resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101):

wherein R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different; R 11 represents a hydrogen atom or an alkyl group optionally having a substituent; R 2 represents a fluorine atom, a chlorine atom, or a bromine atom; and Y 1 represents a single bond or a linking group.

2. The resist material according to claim 1 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (102):

wherein X 1 represents an alkyl group optionally having a substituent, an acyl group optionally having a substituent, or an allyl group optionally having a substituent; R 3 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 2 represents a single bond or a linking group.

3. The resist material according to claim 1 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (103):

wherein X 2 represents an aryl group optionally having a substituent; R 4 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 3 represents a single bond or a linking group.

4. The resist material according to claim 1 , wherein, in the formula (101), R 11 is a hydrogen atom.

5. The resist material according to claim 2 , wherein, in the formula (102), R 3 represents a fluorine atom, a chlorine atom, or a bromine atom.

6. A resist film formed from the resist material according to claim 1 , wherein the resist film is formed by applying the resist material on a substrate and heating.

7. A pattern forming method, comprising:
applying the resist material according to claim 1 onto a substrate to form a resist film,
exposing, and
developing.

8. The pattern forming method according to claim 7 , further comprising:
introducing a metal before the developing.

9. The pattern forming method according to claim 7 , wherein, in the exposing, an electromagnetic wave having a wavelength of 15 nm or less is applied to the resist film.

10. The pattern forming method according to claim 7 , wherein a developing solution used in the developing comprises at least one selected from the group consisting of an ester compound, a ketone compound, and an alcohol compound.

11. A resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101), wherein the polymer further comprises a unit derived from a structure represented by the following formula (102):

wherein R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different; R 11 represents a hydrogen atom or an alkyl group optionally having a substituent; R 2 represents a fluorine atom, a chlorine atom, or a bromine atom; and Y 1 represents a single bond or a linking group;

wherein X 1 represents an alkyl group optionally having a substituent, an acyl group optionally having a substituent, or an allyl group optionally having a substituent; R 3 represents a fluorine atom, a chlorine atom, or a bromine atom, or a halogenated alkyl group; and Y 2 represents a single bond or a linking group.

12. The resist material according to claim 11 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (103):

wherein X 2 represents an aryl group optionally having a substituent; R 4 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 3 represents a single bond or a linking group.

13. The resist material according to claim 11 , wherein, in the formula (101), R 11 is a hydrogen atom.

14. A resist film formed from the resist material according to claim 11 , wherein the resist film is formed by applying the resist material on a substrate and heating.

15. A pattern forming method, comprising:
applying the resist material according to claim 11 onto a substrate to form a resist film,
exposing, and
developing.

16. The pattern forming method according to claim 15 , further comprising:
introducing a metal before the developing.

17. The pattern forming method according to claim 15 , wherein, in the exposing, an electromagnetic wave having a wavelength of 15 nm or less is applied to the resist film.

18. The pattern forming method according to claim 15 , wherein a developing solution used in the developing comprises at least one selected from the group consisting of an ester compound, a ketone compound, and an alcohol compound.

Assignees

• Oji Holdings Corp

Inventors

• Hattori Kimiko
• Morita Kazuyo

Classifications

• G03F7/2059

  using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title

• C08F220/22

  Esters containing halogen · CPC title

• C08F220/283

  and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title