Silicon carbide nanoneedles and fabrication thereof

US12246155B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12246155-B2
Application numberUS-202016987121-A
CountryUS
Kind codeB2
Filing dateAug 6, 2020
Priority dateAug 6, 2020
Publication dateMar 11, 2025
Grant dateMar 11, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region, and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar.

First claim

Opening claim text (preview).

What is claimed is: 1. A product, comprising: an elongated carbon-containing pillar having a bottom and a tip opposite the bottom, wherein the width of the pillar measured 1 nm below the tip is less than 700 nm, wherein the pillar, when formed, has no oxidation on an outer surface thereof. 2. The product as recited in claim 1 , wherein the tip is rounded. 3. The product as recited in claim 1 , wherein the pillar extends from a single crystal substrate having a bulk composition that is the same as the bulk composition of the pillar. 4. The product as recited in claim 3 , wherein the pillar has no higher concentration of defects per unit volume than the single crystal substrate. 5. The product as recited in claim 1 , wherein the pillar has a faceted peripheral outer surface. 6. The product as recited in claim 1 , wherein the pillar has a rounded peripheral outer surface. 7. The product as recited in claim 6 , wherein the peripheral outer surface of the pillar is rounded therealong from the bottom to the tip of the pillar. 8. The product as recited in claim 1 , wherein the pillar is SiC. 9. The product as recited in claim 1 , wherein the pillar is diamond. 10. The product as recited in claim 1 , comprising an array of the pillars extending from a substrate, the pillars and substrate having the same bulk composition throughout. 11. The product as recited in claim 10 , wherein at least some of the pillars have an inner channel extending along a longitudinal axis thereof. 12. The product as recited in claim 11 , wherein the substrate has channels therethrough in fluid communication with the channels of at least some of the pillars. 13. A method of making the product as recited in claim 1 , the method comprising: masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal; performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region; and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar. 14. The method as recited in claim 13 , wherein performing the chemical etch includes contacting the pillars with a gas having at least one etchant, the etchant being selected from the group consisting of: H, Cl, Br, and I. 15. The method as recited in claim 14 , comprising adding a defined amount of oxygen to the gas for reducing an extent of crystallographic etching. 16. The method as recited in claim 13 , wherein each pillar comprises a bottom and a tip opposite the bottom, wherein the width of the pillar measured 1 nm below the tip is less than 700 nm. 17. The method as recited in claim 13 , wherein each pillar has an inner channel extending along a longitudinal axis thereof. 18. A product, comprising: an elongated carbon-containing pillar having a bottom and a tip opposite the bottom, wherein the width of the pillar measured 1 nm below the tip is less than 700 nm, wherein the pillar has an inner channel extending along a longitudinal axis thereof. 19. The product as recited in claim 18 , wherein the pillar extends from a single crystal substrate having a bulk composition that is the same as the bulk composition of the pillar, wherein the substrate has a channel therethrough in fluid communication with the channel of the pillar.

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What does patent US12246155B2 cover?
A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked…
Who is the assignee on this patent?
L Livermore Nat Security Llc
What technology area does this patent fall under?
Primary CPC classification A61M37/0015. Mapped technology areas include Human Necessities.
When was this patent published?
Publication date Tue Mar 11 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).