Liquid for nitriding treatment, nitrided metal oxide manufacturing method, and nitrided indium oxide film

Patent metadata

Field	Value
Publication number	US-12240754-B2
Application number	US-201917266188-A
Country	US
Kind code	B2
Filing date	Aug 20, 2019
Priority date	Aug 22, 2018
Publication date	Mar 4, 2025
Grant date	Mar 4, 2025

Abstract

An alkali metal amide is dissolved in a cyclic alkylene urea represented by the formula (1) (wherein each of R1 and R2 represents a C1 to C3 alkyl group, and R3 represents a C1 to C4 alkylene group).

First claim

The invention claimed is:

1. A nitriding treatment liquid consisting of an alkali metal amide dissolved in a solvent,
wherein the alkali metal amide is lithium amide, sodium amide, potassium amide, or a mixture thereof, and
wherein the solvent comprises a cyclic alkylene urea represented by the following formula (1):

 wherein each of R 1 and R 2 represents a C1 to C3 alkyl group, and R 3 represents a C1 to C4 alkylene group.

2. A nitriding treatment liquid according to claim 1 , wherein the cyclic alkylene urea is dimethylpropylene urea or dimethylethylene urea.

3. A method for producing a nitrided metal oxide, wherein the method comprises a nitriding step of heating a nitriding treatment liquid as recited in claim 1 in an inert gas atmosphere, while the liquid is in contact with the surface of a metal oxide.

4. A nitrided metal oxide production method according to claim 3 , wherein the method further includes, after the nitriding step, an annealing step of annealing the metal oxide which is treated by heating in a deoxygenated atmosphere.

5. A nitrided metal oxide production method according to claim 3 , wherein the metal oxide is one species selected from In 2 O 3 , Ga 2 O 3 , Al 2 O 3 , TiO 2 , Fe 2 O 3 , MnO 2 , WO 3 , MoO 3 , LizTiO 3 , LizZrO 3 , LizMoO 4 , Li 2 WO 4 , Na 2 MoO 4 , LiGaO 2 , LiInO 2 , NaGaO 2 , FeMoO 4 , MnMoO 4 , FeWO 4 , MnWO 4 , LiInO 2 , and NaInO 2 , or a mixture of the plurality of the oxides.

6. A nitrided metal oxide production method according to claim 3 , wherein the metal oxide is in the form of indium oxide film formed on a substrate.

Assignees

• Univ Hokkaido Nat Univ Corp
• Nissan Chemical Corp

Inventors

• Tadanaga Kiyoharu
• Miura Akira
• Isaji Tadayuki
• Maeda Shinichi

Classifications

• C07D229/00

  Heterocyclic compounds containing rings of less than five members having two nitrogen atoms as the only ring hetero atoms · CPC title

• C01P2002/52

  containing elements as dopants · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• C01B21/0821 Primary

  Oxynitrides of metals, boron or silicon · CPC title

• C01G15/00 Primary

  Compounds of gallium, indium or thallium · CPC title